Physical Description of Quasi-Saturation and Impact-Ionization Effects in High-Voltage Drain-Extended MOSFETs
Lei Wang, Jun Wang, Chao Gao, Jian Hu, Li, P., Wenjun Li, Yang, S.H.Y.
Published in IEEE transactions on electron devices (01.03.2009)
Published in IEEE transactions on electron devices (01.03.2009)
Get full text
Journal Article