A new p-channel AlGaAs/GaAs MIS-like heterostructure FET employing two dimensional hole gas
OE, K, HIRANO, M, ARAI, K, YANAGAWA, F
Published in Japanese Journal of Applied Physics (01.05.1985)
Published in Japanese Journal of Applied Physics (01.05.1985)
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Journal Article
Growth Properties of Al x Ga 1-x As Grown by MOVPE Using TEG and TMA
Shinohara, Masanori, Imamura, Yoshihiro, Yanagawa, Fumihiko
Published in Japanese Journal of Applied Physics (01.09.1987)
Published in Japanese Journal of Applied Physics (01.09.1987)
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Journal Article
High Threshold Voltage Reproducibility for WSi/Al x Ga 1-x As/GaAs MIS-Like Heterostructure FET
Maruo, Tetsuya, Arai, Kunihiro, Yanagawa, Fumihiko
Published in Japanese Journal of Applied Physics (01.06.1986)
Published in Japanese Journal of Applied Physics (01.06.1986)
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Journal Article
Threshold Voltage Behavior for WSi/Al x Ga 1-x As/GaAs MIS-Like Heterostructure FET
Arai, Kunihiro, Mizutani, Takashi, Yanagawa, Fumihiko
Published in Japanese Journal of Applied Physics (01.08.1985)
Published in Japanese Journal of Applied Physics (01.08.1985)
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Resistance stability of AuIn2 thin-film resistors for Pb-alloy Josephson integrated circuits
Hasumi, Yuji, Arai, Kunihiro, Waho, Takao, Yanagawa, Fumihiko
Published in Journal of applied physics (01.01.1985)
Published in Journal of applied physics (01.01.1985)
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Electrical resistivity of AuIn2 thin films at 4.2 K
Hasumi, Yuji, Arai, Kunihiro, Waho, Takao, Yanagawa, Fumihiko
Published in Journal of applied physics (15.01.1984)
Published in Journal of applied physics (15.01.1984)
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