An 0.8-μm high-voltage IC using a newly designed 600-V lateral p-channel dual-action device on SOI
Watabe, K., Akiyama, H., Terashima, T., Okada, M., Nobuto, S., Yamawaki, M., Asai, S.
Published in IEEE journal of solid-state circuits (01.09.1998)
Published in IEEE journal of solid-state circuits (01.09.1998)
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Journal Article
A pixel size shrinkage of amplified MOS imager with two-line mixing
Yamawaki, M., Kawashima, H., Murata, N., Andoh, F., Sugawara, M., Fujita, Y.
Published in IEEE transactions on electron devices (01.05.1996)
Published in IEEE transactions on electron devices (01.05.1996)
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Journal Article