Search Results - "YAMAUCHI HIROMI" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Relationships of Alcohol Consumption with Coronary Risk Factors and Macro- and Micro-Nutrient Intake in Japanese People: The INTERLIPID Study

Relationships of Alcohol Consumption with Coronary Risk Factors and Macro- and Micro-Nutrient Intake in Japanese People: The INTERLIPID Study

by MATSUMOTO-YAMAUCHI, Hiromi, KONDO, Keiko, MIURA, Katsuyuki, TANAKA-MIZUNO, Sachiko, SEGAWA, Hiroyoshi, OHNO, Seiko, MIYAGAWA, Naoko, ZAID, Maryam, OKAMI, Yukiko, OKUDA, Nagako, NAKAGAWA, Hideaki, SAKATA, Kiyomi, SAITOH, Shigeyuki, OKAYAMA, Akira, YOSHITA, Katsushi, CHAN, Queenie, MASAKI, Kamal, ELLIOTT, Paul, STAMLER, Jeremiah, UESHIMA, Hirotsugu, for the INTERLIPID Research Group
Published in Journal of Nutritional Science and Vitaminology (01.01.2021)

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Alcohol consumption and cognitive function in elderly Japanese men

Alcohol consumption and cognitive function in elderly Japanese men

by Siddiquee, Ali Tanweer, Kadota, Aya, Fujiyoshi, Akira, Miyagawa, Naoko, Saito, Yoshino, Suzuki, Harumitsu, Kondo, Keiko, Yamauchi, Hiromi, Ito, Takahiro, Segawa, Hiroyoshi, Tooyama, Ikuo, Miura, Katsuyuki, Ueshima, Hirotsugu
Published in Alcohol (Fayetteville, N.Y.) (01.06.2020)

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Association of Red Meat Intake with the Risk of Cardiovascular Mortality in General Japanese Stratified by Kidney Function: NIPPON DATA80

Association of Red Meat Intake with the Risk of Cardiovascular Mortality in General Japanese Stratified by Kidney Function: NIPPON DATA80

by Segawa, Hiroyoshi, Kondo, Keiko, Kadota, Aya, Yamauchi, Hiromi, Ohno, Seiko, Tanaka-Mizuno, Sachiko, Okuda, Nagako, Miyagawa, Naoko, Arima, Hisatomi, Okamura, Tomonori, Miura, Katsuyuki, Okayama, Akira, Ueshima, Hirotsugu, The Nippon Data Research Group
Published in Nutrients (30.11.2020)

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Decomposition of On-Current Variability of nMOS FinFETs for Prediction Beyond 20 nm

Decomposition of On-Current Variability of nMOS FinFETs for Prediction Beyond 20 nm

by Matsukawa, T., Liu, Y., O'uchi, S., Endo, K., Tsukada, J., Yamauchi, H., Ishikawa, Y., Ota, H., Migita, S., Morita, Y., Mizubayashi, W., Sakamoto, K., Masahara, M.
Published in IEEE transactions on electron devices (01.08.2012)

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Bias temperature instability in tunnel field-effect transistors

Bias temperature instability in tunnel field-effect transistors

by Mizubayashi, Wataru, Mori, Takahiro, Fukuda, Koichi, Ishikawa, Yuki, Morita, Yukinori, Migita, Shinji, Ota, Hiroyuki, Liu, Yongxun, O uchi, Shinichi, Tsukada, Junichi, Yamauchi, Hiromi, Matsukawa, Takashi, Masahara, Meishoku, Endo, Kazuhiko
Published in Japanese Journal of Applied Physics (01.04.2017)

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Impact of granular work function variation in a gate electrode on low-frequency noise for fin field-effect transistors

Impact of granular work function variation in a gate electrode on low-frequency noise for fin field-effect transistors

by Matsukawa, Takashi, Fukuda, Koichi, Liu, Yongxun, Tsukada, Junichi, Yamauchi, Hiromi, Endo, Kazuhiko, Ishikawa, Yuki, O uchi, Shin-ichi, Migita, Shinji, Morita, Yukinori, Mizubayashi, Wataru, Ota, Hiroyuki, Masahara, Meishoku
Published in Applied physics express (01.04.2015)

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Enhancement of FinFET performance using 25-nm-thin sidewall spacer grown by atomic layer deposition

Enhancement of FinFET performance using 25-nm-thin sidewall spacer grown by atomic layer deposition

by Endo, Kazuhiko, Ishikawa, Yuki, Matsukawa, Takashi, Liu, Yongxum, O’uchi, Shin-ichi, Sakamoto, Kunihiro, Tsukada, Junichi, Yamauchi, Hiromi, Masahara, Meishoku
Published in Solid-state electronics (01.08.2012)

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Variability Analysis of Scaled Crystal Channel and Poly-Si Channel FinFETs

Variability Analysis of Scaled Crystal Channel and Poly-Si Channel FinFETs

by Yongxun Liu, Kamei, T., Matsukawa, T., Endo, K., O'uchi, S., Tsukada, J., Yamauchi, H., Ishikawa, Y., Hayashida, T., Sakamoto, K., Ogura, A., Masahara, M.
Published in IEEE transactions on electron devices (01.03.2012)

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Atomic Layer Deposition of SiO2 for the Performance Enhancement of Fin Field Effect Transistors

Atomic Layer Deposition of SiO2 for the Performance Enhancement of Fin Field Effect Transistors

by Endo, Kazuhiko, Ishikawa, Yuki, Matsukawa, Takashi, Liu, Yongxun, O'uchi, Shin-ichi, Sakamoto, Kunihiro, Tsukada, Junichi, Yamauchi, Hiromi, Masahara, Meishoku
Published in Jpn J Appl Phys (01.11.2013)

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Heated ion implantation for high-performance and highly reliable silicon-on-insulator complementary metal-oxide-silicon fin field-effect transistors

Heated ion implantation for high-performance and highly reliable silicon-on-insulator complementary metal-oxide-silicon fin field-effect transistors

by Mizubayashi, Wataru, Onoda, Hiroshi, Nakashima, Yoshiki, Ishikawa, Yuki, Matsukawa, Takashi, Endo, Kazuhiko, Liu, Yongxun, O uchi, Shinichi, Tsukada, Junichi, Yamauchi, Hiromi, Migita, Shinji, Morita, Yukinori, Ota, Hiroyuki, Masahara, Meishoku
Published in Japanese Journal of Applied Physics (01.04.2015)

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Channel shape and interpoly dielectric material effects on electrical characteristics of floating-gate-type three-dimensional fin channel flash memories

Channel shape and interpoly dielectric material effects on electrical characteristics of floating-gate-type three-dimensional fin channel flash memories

by Liu, Yongxun, Nabatame, Toshihide, Nguyen, Num, Matsukawa, Takashi, Endo, Kazuhiko, O uchi, Shinichi, Tsukada, Junichi, Yamauchi, Hiromi, Ishikawa, Yuki, Mizubayashi, Wataru, Morita, Yukinori, Migita, Shinji, Ota, Hiroyuki, Chikyow, Toyohiro, Masahara, Meishoku
Published in Japanese Journal of Applied Physics (01.04.2015)

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Fin-Height Effect on Poly-Si/PVD-TiN Stacked-Gate FinFET Performance

Fin-Height Effect on Poly-Si/PVD-TiN Stacked-Gate FinFET Performance

by Hayashida, T., Endo, K., Liu, Y., O'uchi, S., Matsukawa, T., Mizubayashi, W., Migita, S., Morita, Y., Ota, H., Hashiguchi, H., Kosemura, D., Kamei, T., Tsukada, J., Ishikawa, Y., Yamauchi, H., Ogura, A., Masahara, M.
Published in IEEE transactions on electron devices (01.03.2012)

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Variability Analysis of TiN FinFET SRAM Cells and Its Compensation by Independent-DG FinFETs

Variability Analysis of TiN FinFET SRAM Cells and Its Compensation by Independent-DG FinFETs

by Endo, Kazuhiko, O'uchi, Shin-ichi, Ishikawa, Yuki, Yongxun Liu, Matsukawa, Takashi, Sakamoto, Kunihiro, Tsukada, Junichi, Yamauchi, Hiromi, Masahara, Meishoku
Published in IEEE electron device letters (01.10.2010)

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Nanoscale Wet Etching of Physical-Vapor-Deposited Titanium Nitride and Its Application to Sub-30-nm-Gate-Length Fin-Type Double-Gate Metal--Oxide--Semiconductor Field-Effect Transistor Fabrication

Nanoscale Wet Etching of Physical-Vapor-Deposited Titanium Nitride and Its Application to Sub-30-nm-Gate-Length Fin-Type Double-Gate Metal--Oxide--Semiconductor Field-Effect Transistor Fabrication

by Liu, Yongxun, Kamei, Takahiro, Endo, Kazuhiko, O'uchi, Shinichi, Tsukada, Junichi, Yamauchi, Hiromi, Hayashida, Tetsuro, Ishikawa, Yuki, Matsukawa, Takashi, Sakamoto, Kunihiro, Ogura, Atsushi, Masahara, Meishoku
Published in Japanese Journal of Applied Physics (01.06.2010)

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Investigation of Low-Energy Tilted Ion Implantation for Fin-Type Double-Gate Metal--Oxide--Semiconductor Field-Effect Transistor Extension Doping

Investigation of Low-Energy Tilted Ion Implantation for Fin-Type Double-Gate Metal--Oxide--Semiconductor Field-Effect Transistor Extension Doping

by Liu, Yongxun, Matsukawa, Takashi, Endo, Kazuhiko, O'uchi, Shinich, Sakamoto, Kunihiro, Tsukada, Junichi, Ishikawa, Yuki, Yamauchi, Hiromi, Masahara, Meishoku
Published in Japanese Journal of Applied Physics (01.04.2010)

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Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories

Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories

by Liu, Yongxun, Kamei, Takahiro, Matsukawa, Takashi, Endo, Kazuhiko, O'uchi, Shinichi, Tsukada, Junichi, Yamauchi, Hiromi, Ishikawa, Yuki, Hayashida, Tetsuro, Sakamoto, Kunihiro, Ogura, Atsushi, Masahara, Meishoku
Published in Japanese Journal of Applied Physics (01.06.2013)

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Experimental Evaluation of Effects of Channel Doping on Characteristics of FinFETs

Experimental Evaluation of Effects of Channel Doping on Characteristics of FinFETs

by Endo, K., Ishikawa, Y., Liu Yongxum, Masahara, M., Matsukawa, T., O'uchi, S.-I., Ishii, K., Yamauchi, H., Tsukada, J., Suzuki, E.
Published in IEEE electron device letters (01.12.2007)

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Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials

Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials

by Liu, Yongxun, Nabatame, Toshihide, Matsukawa, Takashi, Endo, Kazuhiko, O'uchi, Shinichi, Tsukada, Junichi, Yamauchi, Hiromi, Ishikawa, Yuki, Mizubayashi, Wataru, Morita, Yukinori, Migita, Shinji, Ota, Hiroyuki, Chikyow, Toyohiro, Masahara, Meishoku
Published in Journal of low power electronics and applications (20.06.2014)

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A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

by Hayashida, Tetsuro, Liu, Yongxun, Matsukawa, Takashi, Endo, Kazuhiko, O'uchi, Shinich, Sakamoto, Kunihiro, Ishii, Kenichi, Tsukada, Junichi, Ishikawa, Yuki, Yamauchi, Hiromi, Suzuki, Eiichi, Ogura, Atsushi, Masahara, Meishoku
Published in Japanese Journal of Applied Physics (01.05.2009)

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Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium--Nitride Gate for High-Performance Fin-Type Metal--Oxide--Semiconductor Field-Effect Transistors

Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium--Nitride Gate for High-Performance Fin-Type Metal--Oxide--Semiconductor Field-Effect Transistors

by Hayashida, Tetsuro, Endo, Kazuhiko, Liu, Yongxun, O'uchi, Shin-ichi, Matsukawa, Takashi, Mizubayashi, Wataru, Migita, Shinji, Morita, Yukinori, Ota, Hiroyuki, Hashiguchi, Hiroki, Kosemura, Daisuke, Kamei, Takahiro, Tsukada, Junichi, Ishikawa, Yuki, Yamauchi, Hiromi, Ogura, Atsushi, Masahara, Meishoku
Published in Japanese Journal of Applied Physics (01.04.2012)

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