Interface reaction of the SnS/BaSi2 heterojunction fabricated for solar cell applications
Hara, Kosuke O., Arimoto, Keisuke, Yamanaka, Junji, Nakagawa, Kiyokazu
Published in Thin solid films (31.07.2020)
Published in Thin solid films (31.07.2020)
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Journal Article
Sharp phase-separated interface of 6,13-bis(triisopropylsilylethynyl) pentacene/polystyrene blend films prepared by electrostatic spray deposition
Onojima, Norio, Ozawa, Takumi, Sugai, Takuya, Obata, Shunsuke, Miyazawa, Yuta, Yamanaka, Junji
Published in Organic electronics (01.03.2019)
Published in Organic electronics (01.03.2019)
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Dependences of the hole mobility in the strained Si pMOSFET and gated Hall bars formed on SiGe/Si(110) on the channel direction and the strained Si thickness
Arimoto, Keisuke, Fujisawa, Taisuke, Namiuchi, Daichi, Onogawa, Atsushi, Sano, Yuichi, Izumi, Daisuke, Yamanaka, Junji, Hara, Kosuke O., Sawano, Kentarou, Nakagawa, Kiyokazu
Published in Journal of crystal growth (01.10.2021)
Published in Journal of crystal growth (01.10.2021)
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Journal Article
Suppression of Near-interface Oxidation in Thermally-evaporated BaSi2 Films and Its Effects on Preferred Orientation and the Rectification Behavior of n-BaSi2/p+-Si Diodes
Hara, Kosuke O., Arimoto, Keisuke, Yamanaka, Junji, Nakagawa, Kiyokazu, Usami, Noritaka
Published in MRS advances (01.01.2018)
Published in MRS advances (01.01.2018)
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Journal Article
Evaluation of Lattice-Spacing of SiGe/Si by NBD using Two-condenser-lens TEM
Yamanaka, Junji, Oguni, Takuya, Sano, Yuichi, Ohshima, Yusuke, Onogawa, Atsushi, Hara, Kosuke O., Arimoto, Keisuke
Published in Microscopy and microanalysis (01.08.2022)
Published in Microscopy and microanalysis (01.08.2022)
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Journal Article
Influences of lattice strain and SiGe buffer layer thickness on electrical characteristics of strained Si/SiGe/Si(110) heterostructures
Fujisawa, Taisuke, Onogawa, Atsushi, Horiuchi, Miki, Sano, Yuichi, Sakata, Chihiro, Yamanaka, Junji, Hara, Kosuke O., Sawano, Kentarou, Nakagawa, Kiyokazu, Arimoto, Keisuke
Published in Materials science in semiconductor processing (01.07.2023)
Published in Materials science in semiconductor processing (01.07.2023)
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Journal Article
Hole mobility in strained Si/SiGe/vicinal Si(110) grown by gas source MBE
Arimoto, Keisuke, Yagi, Sosuke, Yamanaka, Junji, Hara, Kosuke O., Sawano, Kentarou, Usami, Noritaka, Nakagawa, Kiyokazu
Published in Journal of crystal growth (15.06.2017)
Published in Journal of crystal growth (15.06.2017)
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Journal Article
Strain relaxation process and evolution of crystalline morphologies during the growths of SiGe on Si(110) by solid-source molecular beam epitaxy
Saito, Shingo, Sano, Yuichi, Yamada, Takane, Hara, Kosuke O., Yamanaka, Junji, Nakagawa, Kiyokazu, Arimoto, Keisuke
Published in Materials science in semiconductor processing (01.07.2020)
Published in Materials science in semiconductor processing (01.07.2020)
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Journal Article
Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy
Arimoto, Keisuke, Nakazawa, Hiroki, Mitsui, Shohei, Utsuyama, Naoto, Yamanaka, Junji, Hara, Kosuke O, Usami, Noritaka, Nakagawa, Kiyokazu
Published in Semiconductor science and technology (29.09.2017)
Published in Semiconductor science and technology (29.09.2017)
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Journal Article
Crystal structure and ion-exchange property of a lepidocrocite-like sodium titanate
Makise, Keito, Takei, Takahiro, Saito, Norio, Yamanaka, Junji, Kumada, Nobuhiro, Mori, Hiroyoshi, Itoi, Nobuki, Goto, Toshiki
Published in Journal of Asian Ceramic Societies (02.01.2023)
Published in Journal of Asian Ceramic Societies (02.01.2023)
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Journal Article
Stability of strain in Si layers formed on SiGe/Si(110) heterostructures
Arimoto, Keisuke, Onogawa, Atsushi, Saito, Shingo, Yamada, Takane, Sato, Kei, Utsuyama, Naoto, Sano, Yuichi, Izumi, Daisuke, Yamanaka, Junji, Hara, Kosuke O, Sawano, Kentarou, Nakagawa, Kiyokazu
Published in Semiconductor science and technology (15.11.2018)
Published in Semiconductor science and technology (15.11.2018)
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Journal Article
Hole mobility in Strained Si/Relaxed SiGe/Si(110) hetero structures studied by gated Hall measurements
Namiuchi, Daichi, Onogawa, Atsushi, Fujisawa, Taisuke, Sano, Yuichi, Izumi, Daisuke, Yamanaka, Junji, Hara, Kosuke O., Sawano, Kentarou, Nakagawa, Kiyokazu, Arimoto, Keisuke
Published in Materials science in semiconductor processing (01.07.2020)
Published in Materials science in semiconductor processing (01.07.2020)
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Journal Article
Control of electrical properties of BaSi2 thin films by alkali-metal doping using alkali-metal fluorides
Hara, Kosuke O., Du, Weijie, Arimoto, Keisuke, Yamanaka, Junji, Nakagawa, Kiyokazu, Toko, Kaoru, Suemasu, Takashi, Usami, Noritaka
Published in Thin solid films (31.03.2016)
Published in Thin solid films (31.03.2016)
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Journal Article
Evaluation of Crystal Lattice Rotation around a Stress-Induced Twin in a Step-Graded SiGe / Si (110) Using STEM Moiré Observation and its Image Analysis
Yamanaka, Junji, Yamamoto, Chiaya, Shirakura, Mai, Hara, Kosuke O., Arimoto, Keisuke, Nakagawa, Kiyokazu, Ishizuka, Akimitsu, Ishizuka, Kazuo
Published in Microscopy and microanalysis (01.08.2019)
Published in Microscopy and microanalysis (01.08.2019)
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Journal Article
Relaxation of Strain in Si Layers Formed on (110)-Oriented SiGe/Si Heterostructures
Arimoto, Keisuke, Onogawa, Atsushi, Saito, Shingo, Sano, Yuichi, Izumi, Daisuke, Yamanaka, Junji, Hara, Kosuke O, Nakagawa, Kiyokazu
Published in ECS transactions (22.10.2019)
Published in ECS transactions (22.10.2019)
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Journal Article
Low nickel germanide contact resistances by carrier activation enhancement techniques for germanium CMOS application
Miyoshi, Hidenori, Ueno, Tetsuji, Hirota, Yoshihiro, Yamanaka, Junji, Arimoto, Keisuke, Nakagawa, Kiyokazu, Kaitsuka, Takanobu
Published in Japanese Journal of Applied Physics (01.04.2014)
Published in Japanese Journal of Applied Physics (01.04.2014)
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