An extraction method of channel resistance for analysis of carrier scattering mechanism in SiC trench MOSFETs
Kutsuki, Katsuhiro, Kagoshima, Eiji, Onishi, Toru, Saito, Jun, Yamamoto, Kensaku, Watanabe, Yukihiko
Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
Get full text
Journal Article
Effect of N bonding structure in AlON deposited by plasma-assisted atomic layer deposition on electrical properties of 4H-SiC MOS capacitor
Takeuchi, Wakana, Yamamoto, Kensaku, Sakashita, Mitsuo, Nakatsuka, Osamu, Zaima, Sigeaki
Published in Japanese Journal of Applied Physics (01.01.2018)
Published in Japanese Journal of Applied Physics (01.01.2018)
Get full text
Journal Article
Effect of surface roughness of trench sidewalls on electrical properties in 4H-SiC trench MOSFETs
Kutsuki, Katsuhiro, Murakami, Yuki, Watanabe, Yukihiko, Onishi, Toru, Yamamoto, Kensaku, Fujiwara, Hirokazu, Ito, Takahiro
Published in Japanese Journal of Applied Physics (01.04.2018)
Published in Japanese Journal of Applied Physics (01.04.2018)
Get full text
Journal Article
Impact of optical phonon scattering on inversion channel mobility in 4H-SiC trenched MOSFETs
Kutsuki, Katsuhiro, Kawaji, Sachiko, Watanabe, Yukihiko, Onishi, Toru, Fujiwara, Hirokazu, Yamamoto, Kensaku, Yamamoto, Toshimasa
Published in Japanese Journal of Applied Physics (01.04.2017)
Published in Japanese Journal of Applied Physics (01.04.2017)
Get full text
Journal Article
Effects of nitridation for SiO2/SiC interface on defect properties near the conduction band edge
Takeuchi, Wakana, Yamamoto, Kensaku, Taoka, Noriyuki, Sakashita, Mitsuo, Kanemura, Takashi, Nakatsuka, Osamu, Zaima, Shigeaki
Published in Japanese Journal of Applied Physics (01.04.2016)
Published in Japanese Journal of Applied Physics (01.04.2016)
Get full text
Journal Article
Impact of Al Doping Concentration at Channel Region on Mobility and Threshold Voltage Instability in 4H-SiC Trench N-MOSFETs
Yamamoto, Kensaku, Kutsuki, Katsuhiro, Tsujimura, Masatoshi, Onishi, Toru, Kawaji, Sachiko, Watanabe, Yukihiko, Fujiwara, Hirokazu, Kanemura, Takashi
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
Get full text
Journal Article
Thermal stability of GaN on (1 1 1) Si substrate
Ishikawa, Hiroyasu, Yamamoto, Kensaku, Egawa, Takashi, Soga, Tetsuo, Jimbo, Takashi, Umeno, Masayoshi
Published in Journal of crystal growth (01.06.1998)
Published in Journal of crystal growth (01.06.1998)
Get full text
Journal Article
HOME DELIVERY DEVICE
UEMATSU ISAO, NODA NOZOMI, KONDO YURIE, MATSUSHIMA KUNIAKI, YAMAMOTO KENSAKU
Year of Publication 09.01.2024
Get full text
Year of Publication 09.01.2024
Patent
Experimental investigation and modeling of inversion carrier effective mobility in 4H-SiC trench MOSFETs
Kutsuki, Katsuhiro, Watanabe, Yukihiko, Yamashita, Yusuke, Soejima, Narumasa, Kataoka, Keita, Onishi, Toru, Yamamoto, Kensaku, Fujiwara, Hirokazu
Published in Solid-state electronics (01.07.2019)
Published in Solid-state electronics (01.07.2019)
Get full text
Journal Article
DELIVERY ROBOT AND NOTIFICATION METHOD
UEMATSU ISAO, NODA NOZOMI, KONDO YURIE, MATSUSHIMA KUNIAKI, YAMAMOTO KENSAKU
Year of Publication 12.10.2022
Get full text
Year of Publication 12.10.2022
Patent
TRAVEL CONTROL APPARATUS, TRAVEL CONTROL METHOD, AND PROGRAM
UEMATSU ISAO, NODA NOZOMI, KONDO YURIE, MATSUSHIMA KUNIAKI, YAMAMOTO KENSAKU
Year of Publication 12.10.2022
Get full text
Year of Publication 12.10.2022
Patent
HOME DELIVERY DEVICE
UEMATSU ISAO, NODA NOZOMI, KONDO YURIE, MATSUSHIMA KUNIAKI, YAMAMOTO KENSAKU
Year of Publication 07.10.2022
Get full text
Year of Publication 07.10.2022
Patent