Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation
Hoshi, Yusuke, Sawano, Kentarou, Yamada, Atsunori, Nagakura, So, Usami, Noritaka, Arimoto, Keisuke, Nakagawa, Kiyokazu, Shiraki, Yasuhiro
Published in Applied physics express (01.09.2011)
Published in Applied physics express (01.09.2011)
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Journal Article
Formation of uniaxially strained SiGe by selective ion implantation technique
Sawano, Kentarou, Hoshi, Yusuke, Yamada, Atsunori, Hiraoka, Yoshiyasu, Usami, Noritaka, Arimoto, Keisuke, Nakagawa, Kiyokazu, Shiraki, Yasuhiro
Published in Thin solid films (26.02.2010)
Published in Thin solid films (26.02.2010)
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Journal Article
Conference Proceeding