A 3-D Bank Memory System for Low-Power Neural Network Processing Achieved by Instant Context Switching and Extended Power Gating Time
Toyotaka, Kouhei, Yakubo, Yuto, Furutani, Kazuma, Katagiri, Haruki, Fujita, Masashi, Ando, Yoshinori, Nakura, Toru, Yamazaki, Shunpei
Published in IEEE journal of the Electron Devices Society (2024)
Published in IEEE journal of the Electron Devices Society (2024)
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Journal Article
A 1.1-nJ/Classification True Analog Current Computing on Multilayer Neural Network With Crystalline-IGZO/Si-CMOS Monolithic Stack Technology
Tsuda, Kazuki, Furutani, Kazuma, Yakubo, Yuto, Godo, Hiromichi, Ando, Yoshinori, Kosuge, Atsutake, Nakura, Toru, Yamazaki, Shunpei
Published in IEEE journal of the Electron Devices Society (2024)
Published in IEEE journal of the Electron Devices Society (2024)
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Journal Article
Properties of c-axis-aligned crystalline indium-gallium-zinc oxide field-effect transistors fabricated through a tapered-trench gate process
Asami, Yoshinobu, Kurata, Motomu, Okazaki, Yutaka, Higa, Eiji, Matsubayashi, Daisuke, Okamoto, Satoru, Sasagawa, Shinya, Moriwaka, Tomoaki, Kakehata, Tetsuya, Yakubo, Yuto, Kato, Kiyoshi, Hamada, Takashi, Sakakura, Masayuki, Hayakawa, Masahiko, Yamazaki, Shunpei
Published in Japanese Journal of Applied Physics (01.04.2016)
Published in Japanese Journal of Applied Physics (01.04.2016)
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Journal Article
SEMICONDUCTOR DEVICE
YAKUBO, Yuto, FURUTANI, Kazuma, TOYOTAKA, Kouhei, KUROKAWA, Yoshiyuki
Year of Publication 18.01.2024
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Year of Publication 18.01.2024
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