Effects of post-deposition anneal on the electrical properties of Si3N4 gate dielectric
Lin, W.H., Pey, K.L., Dong, Z., Choi, S.Y.-M., Zhou, M.S., Ang, T.C., Ang, C.H., Lau, W.S., Ye, J.H.
Published in IEEE electron device letters (01.03.2002)
Published in IEEE electron device letters (01.03.2002)
Get full text
Journal Article
The statistical distribution of percolation current for soft breakdown in ultrathin gate oxide
Lin, W.H., Pey, K.L., Dong, Z., Chooi, S.Y.M., Ang, C.H., Zheng, J.Z.
Published in IEEE electron device letters (01.05.2003)
Published in IEEE electron device letters (01.05.2003)
Get full text
Journal Article
Spin-on-polymer methylsilsesquioxane for sub-micron intermetal dielectric application
CHUA, C. T, SARKAR, G, CHOOI, S. Y. M, CHAN, L
Published in Journal of materials science letters (01.09.1999)
Published in Journal of materials science letters (01.09.1999)
Get full text
Journal Article