Interfacial energy between γ/γ′ phases of Ni–Al alloys extracted by using a new method
Liang, S.X., Liu, K.Y., Zhou, Y.X., Yin, L.X., Shi, Y.D., Zheng, L.Y., Xing, Z.G.
Published in Materials chemistry and physics (01.02.2022)
Published in Materials chemistry and physics (01.02.2022)
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Research and application of interface formation mechanism of dual-liquid casting bimetallic composites
Xing, ZG, Liang, SX, Cao, JJ, Zhang, YC, Fu, HG, Chang, LB, Xing, WL, Yuan, ZY, Liu, XK, Han, J, Liu, HJ
Published in Materials science and technology (26.07.2024)
Published in Materials science and technology (26.07.2024)
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Investigation of characteristics of laterally overgrown GaN on striped sapphire substrates patterned by wet chemical etching
Wang, Jing, Guo, L.W., Jia, H.Q., Xing, Z.G., Wang, Y., Yan, J.F., Yu, N.S., Chen, H., Zhou, J.M.
Published in Journal of crystal growth (01.05.2006)
Published in Journal of crystal growth (01.05.2006)
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Origin of Selective Growth of GaN on Maskless V-Grooved Sapphire Substrates by Metalorganic Chemical Vapor Deposition
Wang, Jing, Guo, Li Wei, Jia, Hai Qiang, Xing, Zhi Gang, Wang, Yang, Chen, Hong, Zhou, Jun Ming
Published in Japanese Journal of Applied Physics (01.01.2005)
Published in Japanese Journal of Applied Physics (01.01.2005)
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Influence of threading dislocations on the properties of InGaN-based multiple quantum wells
Yu, H.B., Chen, H., Li, Dongsheng, Wang, J., Xing, Z.G., Zheng, X.H., Huang, Q., Zhou, J.M.
Published in Journal of crystal growth (01.06.2004)
Published in Journal of crystal growth (01.06.2004)
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Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas
Shang, X Z, Wang, W C, Wu, S D, Xing, Z G, Guo, L W, Wang, W X, Huang, Q, Zhou, J M
Published in Semiconductor science and technology (01.03.2004)
Published in Semiconductor science and technology (01.03.2004)
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