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"Xiaoshi Jin"
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"Xiaoshi Jin"
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Grid insulation tunneling groove bipolar transistor with U-shaped tunneling layer base
by
JIN XIAOSHI
,
LIU XI
Year of Publication
25.03.2015
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Body silicon double-gate insulation tunneling base bipolar transistor and manufacturing method thereof
by
JIN XIAOSHI
,
LIU XI
Year of Publication
25.03.2015
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Bidirectional breakdown protection double-gate insulation tunneling enhancement transistor on bulk silicon and manufacture method of transistor
by
JIN XIAOSHI
,
LIU XI
Year of Publication
11.03.2015
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SOI substrate double-gate insulated tunneling base electrode bipolar transistor and making method thereof
by
JIN XIAOSHI
,
LIU XI
Year of Publication
11.03.2015
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85
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SOI substrate two-way breakdown protection and double-gate insulated tunneling enhanced transistor and making method thereof
by
JIN XIAOSHI
,
LIU XI
Year of Publication
11.03.2015
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86
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High-integrated groove insulated gate tunneling bipolar enhancement transistor and manufacture method thereof
by
JIN XIAOSHI
,
LIU XI
Year of Publication
11.03.2015
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87
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Low subthreshold oscillation range and high voltage withstanding insulated gate tunneling transistor and preparing method thereof
by
JIN XIAOSHI
,
LIU XI
Year of Publication
11.03.2015
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Gate insulating tunneling groove base region bipolar transistor with breakdown protection function
by
JIN XIAOSHI
,
LIU XI
Year of Publication
04.03.2015
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89
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Source-drain auxiliary programmable single-gate Schottky barrier transistor and manufacturing method thereof
by
JIN XIAOSHI
,
YANG BAOXIN
,
LIU XI
,
ZHAO RUIYING
Year of Publication
07.12.2021
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90
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Four-transistor bidirectional XNOR gate CMOS (complementary metal oxide semiconductor) integrated circuit and using and connecting method thereof
by
JIN XIAOSHI
,
LIU XI
,
LI TIANYU
Year of Publication
29.10.2021
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91
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Low-power-consumption double-layer blocking contact type bidirectional XNOR gate integrated circuit and manufacturing method
by
JIN XIAOSHI
,
LIU XI
,
WANG YAN
Year of Publication
29.10.2021
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Nonvolatile resettable bidirectional switching device and manufacturing method thereof
by
JIN XIAOSHI
,
LIU XI
,
LIAN DANCHUN
Year of Publication
01.10.2021
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93
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Main and auxiliary gate discrete control U-shaped channel undoped field effect transistor
by
JIN XIAOSHI
,
LIU XI
,
CHUAI RONGYAN
Year of Publication
14.01.2015
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94
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High-performance and high-integration-level drain electrode auxiliary control L-shaped gate type junction-free transistor
by
JIN XIAOSHI
,
LIU XI
,
CHUAI RONGYAN
Year of Publication
14.01.2015
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95
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High-integration-level and high-mobility-ratio source, drain and gate auxiliary control type junction-free transistor
by
JIN XIAOSHI
,
LIU XI
,
CHUAI RONGYAN
Year of Publication
14.01.2015
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96
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High-integration-level H-shaped source, drain and gate auxiliary control U-shaped channel high-mobility-ratio junction-free transistor
by
JIN XIAOSHI
,
LIU XI
,
CHUAI RONGYAN
Year of Publication
14.01.2015
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High-performance and high-integration-level L-shaped gate-control schottky barrier tunneling transistor
by
JIN XIAOSHI
,
LIU XI
,
CHUAI RONGYAN
Year of Publication
14.01.2015
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98
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High-integration-level source, drain and gate auxiliary control U-shaped channel high-mobility-ratio junction-free transistor shaped like Chinese character 'ri'
by
JIN XIAOSHI
,
LIU XI
,
CHUAI RONGYAN
Year of Publication
14.01.2015
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Developments on computer simulation of injection moulding : modelling with boundary element and finite element methods
by
Jin
,
Xiaoshi
Year of Publication
1992
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Dissertation
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100
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High performance SOI non-junction transistor of non-monolithic substrate insulation layer thickness
by
JIN XIAOSHI
,
LIU XI
,
WU MEILE
,
CHUAI RONGYAN
Year of Publication
22.04.2015
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