Investigations of the gate instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs
Zeng, Changkun, Xu, Weizong, Xia, Yuanyang, Pan, Danfeng, Wang, Yiwang, Wang, Qiang, Zhu, Youhua, Ren, Fangfang, Zhou, Dong, Ye, Jiandong, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai
Published in Applied physics express (01.12.2019)
Published in Applied physics express (01.12.2019)
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Journal Article
Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate
Xia, Yuanyang, Zhu, Youhua, Liu, Chunhua, Wei, Hongyuan, Zhang, Tingting, Lee, Yeeheng, Zhu, Tinggang, wang, Meiyu, Yi, Li, Ge, Mei
Published in Materials research express (01.06.2020)
Published in Materials research express (01.06.2020)
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Journal Article
Blue Light-Emitting Diodes Grown on ZnO Substrates
Xia, Yuanyang, Brault, Julien, Damilano, Benjamin, Chenot, Sébastien, Vennéguès, Philippe, Nemoz, Maud, Teisseire, Monique, Leroux, Mathieu, Obrecht, Rémy, Robin, Ivan-Christophe, Santailler, Jean-Louis, Feuillet, Guy, Chauveau, Jean-Michel
Published in Applied physics express (01.04.2013)
Published in Applied physics express (01.04.2013)
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Journal Article
1.2 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability
Zhou, Feng, Xu, Weizong, Ren, Fangfang, Xia, Yuanyang, Wu, Leke, Zhu, Tinggang, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai
Published in IEEE transactions on power electronics (01.01.2022)
Published in IEEE transactions on power electronics (01.01.2022)
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Journal Article
Irradiation Hardened p-GaN HEMTs Enabling 558 V Single-Event Hardness at 75.7 MeV⋅cm2/mg and 95% Conversion Efficiency at 300 W/500 kHz
Zhou, Feng, Zou, Can, Zhou, Tianyang, Xu, Weizong, Ren, Fangfang, Zhou, Dong, Wang, Yiwang, Chen, Dunjun, Xia, Yuanyang, Wu, Leke, Li, Yiheng, Zhu, Tinggang, Zheng, Youdou, Zhang, Rong, Lu, Hai
Published in IEEE electron device letters (01.06.2024)
Published in IEEE electron device letters (01.06.2024)
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Journal Article
Irradiation Hardened p -GaN HEMTs Enabling 558 V Single-Event Hardness at 75.7 MeV⋅cm 2 /mg and 95% Conversion Efficiency at 300 W/500 kHz
Zhou, Feng, Zou, Can, Zhou, Tianyang, Xu, Weizong, Ren, Fangfang, Zhou, Dong, Wang, Yiwang, Chen, Dunjun, Xia, Yuanyang, Wu, Leke, Li, Yiheng, Zhu, Tinggang, Zheng, Youdou, Zhang, Rong, Lu, Hai
Published in IEEE electron device letters (01.06.2024)
Published in IEEE electron device letters (01.06.2024)
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Journal Article
High-VTH E-Mode GaN HEMTs With Robust Gate-Bias-Dependent VTH Stability Enabled by Mg-Doped p-GaN Engineering
Jin, Yulei, Zhou, Feng, Xu, Weizong, Wang, Zhengpeng, Zhou, Tianyang, Zhou, Dong, Ren, Fangfang, Xia, Yuanyang, Wu, Leke, Li, Yiheng, Zhu, Tinggang, Chen, Dunjun, Zhang, Rong, Ye, Jiandong, Zheng, Youdou, Lu, Hai
Published in IEEE transactions on electron devices (01.11.2023)
Published in IEEE transactions on electron devices (01.11.2023)
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Journal Article
High- V TH E-Mode GaN HEMTs With Robust Gate-Bias-Dependent V TH Stability Enabled by Mg-Doped p-GaN Engineering
Jin, Yulei, Zhou, Feng, Xu, Weizong, Wang, Zhengpeng, Zhou, Tianyang, Zhou, Dong, Ren, Fangfang, Xia, Yuanyang, Wu, Leke, Li, Yiheng, Zhu, Tinggang, Chen, Dunjun, Zhang, Rong, Ye, Jiandong, Zheng, Youdou, Lu, Hai
Published in IEEE transactions on electron devices (01.11.2023)
Published in IEEE transactions on electron devices (01.11.2023)
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Journal Article
Normally-off GaN HEMTs with InGaN p-gate cap layer formed by polarization doping
Zeng, Changkun, Xu, Weizong, Xia, Yuanyang, Wang, Ke, Ren, Fangfang, Zhou, Dong, Li, Yiheng, Zhu, Tinggang, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai
Published in Applied physics express (01.01.2022)
Published in Applied physics express (01.01.2022)
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Journal Article
Multi-aperture anode based AlGaN/GaN Schottky barrier diodes with low turn-on voltage and high uniformity
Lu, Yu, Zhou, Feng, Xu, Weizong, Wang, Dongsheng, Xia, Yuanyang, Zhu, Youhua, Pan, Danfeng, Ren, Fangfang, Zhou, Dong, Ye, Jiandong, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai
Published in Applied physics express (01.09.2020)
Published in Applied physics express (01.09.2020)
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Journal Article
3.0-V-Threshold-Voltage p-GaN HEMTs with Low-Loss Reverse Conduction capability
Zhou, Feng, Xu, Weizong, Jin, Yulei, Zhou, Tianyang, Ren, Fangfang, Zhou, Dong, Xia, Yuanyang, Wu, Leke, Li, Yiheng, Zhu, Tinggang, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai
Published in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (28.05.2023)
Published in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (28.05.2023)
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Conference Proceeding
Normally-Off Schottky-Gate p-GaN HEMTs with Enhanced Irradiation Hardness
Zhou, Tianyang, Zhou, Feng, Chen, Quanyou, Lyu, Xiaofeng, Xu, Weizong, Zhou, Dong, Ren, Fangfang, Chen, Dunjun, Xia, Yuanyang, Wu, Leke, Wang, Ke, Li, Yiheng, Zhu, Tinggang, Zhang, Rong, Zheng, Youdou, Lu, Hai
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
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Conference Proceeding
Grounding Fault Line Selection in the Distribution Network Using a Novel Underdetermined Blind Source Separation Algorithm
Xia, Yuanyang, Li, Xiaocong, Liu, Yuan, Zhang, Lei
Published in 2023 5th International Conference on Electrical Engineering and Control Technologies (CEECT) (15.12.2023)
Published in 2023 5th International Conference on Electrical Engineering and Control Technologies (CEECT) (15.12.2023)
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Conference Proceeding
Superior Performances of Dynamic On-State Resistance in 1.9kV GaN-on-Sapphire HEMT
Lu, Weihao, Li, Sheng, Liu, Siyang, Ma, Yanfeng, Zhang, Long, Wei, Jiaxing, Sun, Weifeng, Li, Yiheng, Xia, Yuanyang, Wang, Ke, Zhu, Tinggang
Published in 2023 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) (27.10.2023)
Published in 2023 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) (27.10.2023)
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Conference Proceeding