The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs
Xi, Shan-Xue, Zheng, Qi-Wen, Lu, Wu, Cui, Jiang-Wei, Wei, Ying, Wang, Bao-Shun, Guo, Qi
Published in Radiation effects and defects in solids (03.05.2020)
Published in Radiation effects and defects in solids (03.05.2020)
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Journal Article
Effects of Total-Ionizing-Dose Irradiation on Single-Event Burnout for Commercial Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors
Chen, Si-Yuan, Yu, Xin, Lu, Wu, Yao, Shuai, Li, Xiao-Long, Wang, Xin, Liu, Mo-Han, Xi, Shan-Xue, Wang, Li-Bin, Sun, Jing, He, Cheng-Fa, Guo, Qi
Published in Chinese physics letters (01.04.2020)
Published in Chinese physics letters (01.04.2020)
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Journal Article
Effects of Total-Ionizing-Dose Irradiation on Single-Event Burnout for Commercial Enhancement-Mode AlGaN/GaN High-Electron Mobility TransistorsSupported by the National Natural Science Foundation of China under Grant Nos. U1532261, U1630141, and 61534008, and the West Light Foundation of Chinese Academy of Sciences under Grant No. 2018-XBQNXZ-B-003
Chen, Si-Yuan, Yu, Xin, Lu, Wu, Yao, Shuai, Li, Xiao-Long, Wang, Xin, Liu, Mo-Han, Xi, Shan-Xue, Wang, Li-Bin, Sun, Jing, He, Cheng-Fa, Guo, Qi
Published in Chinese physics letters (01.04.2020)
Published in Chinese physics letters (01.04.2020)
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Journal Article