Genetic variability and functional implication of the long control region in HPV-16 variants in Southwest China
Xi, Juemin, Chen, Junying, Xu, Miaoling, Yang, Hongying, Luo, Jia, Pan, Yue, Wang, Xiaodan, Qiu, Lijuan, Yang, Jiajia, Sun, Qiangming
Published in PloS one (02.08.2017)
Published in PloS one (02.08.2017)
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Journal Article
The polymorphisms of LCR, E6, and E7 of HPV-58 isolates in Yunnan, Southwest China
Xi, Juemin, Chen, Junying, Xu, Miaoling, Yang, Hongying, Wen, Songjiao, Pan, Yue, Wang, Xiaodan, Ye, Chao, Qiu, Lijuan, Sun, Qiangming
Published in Virology journal (25.04.2018)
Published in Virology journal (25.04.2018)
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Journal Article
Synergistic reduction and oxidation system using 4,7-dihydroxycoumarin as a green photocatalyst for efficient nitrobenzene degradation
Xu, Jiajie, Yan, Changyu, Wu, Zhaojiang, Xu, Miaoling, Wei, Tuo, He, Tingchao, Zhou, Wenhua, Zhang, Yi, Zhang, Junmin, Yang, Bo
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Published in Separation and purification technology (15.11.2022)
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Comparative Study of SiC Planar MOSFETs With Different p-Body Designs
Ni, Weijiang, Wang, Xiaoliang, Xu, Miaoling, Li, Mingshan, Feng, Chun, Xiao, Hongling, Jiang, Lijuan, Li, Wei, Wang, Quan
Published in IEEE transactions on electron devices (01.03.2020)
Published in IEEE transactions on electron devices (01.03.2020)
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Journal Article
1700V 34mΩ 4H-SiC MOSFET With Retrograde Doping in Junction Field-Effect Transistor Region
Ni, Weijiang, Wang, Xiaoliang, Xiao, Hongling, Xu, Miaoling, Li, Mingshan, Schlichting, Holger, Erlbacher, Tobias
Published in 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) (01.06.2019)
Published in 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) (01.06.2019)
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Conference Proceeding
Design and Fabrication of 3300V 100mΩ 4H-SiC MOSFET with Stepped p-body Structure
Ni, Weijiang, Wang, Xiaoliang, Xu, Miaoling, Li, Mingshan, Feng, Chun, Xiao, Hongling, Li, Wei, Wang, Quan, Schlichting, Holger, Erlbacher, Tobias
Published in 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) (01.11.2019)
Published in 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) (01.11.2019)
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Conference Proceeding
DEVELOPMENT OF AN S-BAND KLYSTRON WITH BANDWIDTH OF 11
Wang Yong, Ding Yaogen, Zhang Jian, Wang Shuguo, Xu Miaoling, Jiang Zhenbo, Lu Xi
Published in 电子科学学刊（英文版） (2004)
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Published in 电子科学学刊（英文版） (2004)
Journal Article
SiC MOSFET device and preparation method thereof
SUN BOTAO, LIN XINNAN, ZHANG CHEN, XU MIAOLING, HAN LINAN, QIU YANLI, XIU DEQI
Year of Publication 27.06.2023
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Year of Publication 27.06.2023
Patent
Multi-step multi-channel trench MOSFET device and preparation method thereof
SUKEYOSHI, SUN BOTAO, ZHANG CHEN, XU MIAOLING, HAN LINAN, QIU YANLI, XIU DEQI
Year of Publication 30.05.2023
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Year of Publication 30.05.2023
Patent
Terminal structure of power device and power device
SUN BOTAO, ZHANG CHEN, XU MIAOLING, HAN LINAN, ZHANG JINGWEI, QIU YANLI, XIU DEQI
Year of Publication 07.03.2023
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Year of Publication 07.03.2023
Patent
Manufacturing method of semiconductor device and semiconductor device
SUN BOTAO, LIN XINNAN, ZHANG CHEN, XU MIAOLING, HAN LINAN, ZHANG JINGWEI, QIU YANLI, XIU DEQI
Year of Publication 22.08.2023
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Year of Publication 22.08.2023
Patent
Cell structure of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device
SUN BOTAO, ZHANG CHEN, LI MINGSHAN, XU MIAOLING, QIU YANLI, LI TIANYUN
Year of Publication 22.03.2022
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Year of Publication 22.03.2022
Patent