Formation of HfSiON/SiO2/Si-substrate gate stack with low leakage current for high-performance high-κ misfets
YAMAGUCHI, Masaomi, SAKODA, Tsunehisa, MINAKATA, Hiroshi, SHIQIN XIAO, MORISAKI, Yusuke, IKEDA, Kazuto, MISHIMA, Yasuyoshi
Published in IEEE transactions on electron devices (01.04.2006)
Published in IEEE transactions on electron devices (01.04.2006)
Get full text
Journal Article
Formation of HfSiON/SiO2/Si-substrate gate stack with low leakage current for high-performance high-[kappa] MISFETs
Yamaguchi, M, Sakoda, T, Minakata, H, Shiqin Xiao, Shiqin Xiao, Morisaki, Y, Ikeda, K, Mishima, Y
Published in IEEE transactions on electron devices (01.04.2006)
Published in IEEE transactions on electron devices (01.04.2006)
Get full text
Journal Article
Laser dicing for higher chip productivity
Suzuki, Natsuki, Shiqin, Xiao, Atsumi, Kazuhiro, Uchiyama, Naoki, Ohba, Takayuki
Published in 2016 11th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT) (01.10.2016)
Published in 2016 11th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT) (01.10.2016)
Get full text
Conference Proceeding
Comparison of TiN deposition by rf magnetron sputtering and electron beam sustained arc ion plating
Get full text
Conference Proceeding
Journal Article
1st quantitative failure-rate calculation for the actual large-scale SRAM using ultra-thin gate-dielectric with measured probability of the gate-current fluctuation and simulated circuit failure-rate
Sakoda, T., Tamura, N., Shiqin Xiao, Minakata, H., Morisaki, Y., Nishigaya, K., Saiki, T., Uetake, T., Iwasaki, T., Ehara, H., Matsuyama, H., Shimizu, H., Hashimoto, K., Kimoto, M., Kase, M., Ikeda, K.
Published in 2007 IEEE Symposium on VLSI Technology (01.06.2007)
Published in 2007 IEEE Symposium on VLSI Technology (01.06.2007)
Get full text
Conference Proceeding
Ti-capping technique as a breakthrough for achieving low threshold voltage, high mobility, and high reliability of pMOSFET with metal gate and high-k dielectrics technologies
Takahashi, H., Minakata, H., Morisaki, Y., Shiqin Xiao, Nakabayashi, M., Nishigaya, K., Sakoda, T., Ikeda, K., Morioka, H., Tamura, N., Kase, M., Nara, Y.
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
Get full text
Conference Proceeding
Formation of HfSiON/SiO/sub 2//Si-substrate gate stack with low leakage current for high-performance high-/spl kappa/ MISFETs
Yamaguchi, M., Sakoda, T., Minakata, H., Shiqin Xiao, Morisaki, Y., Ikeda, K., Mishima, Y.
Published in IEEE transactions on electron devices (01.04.2006)
Published in IEEE transactions on electron devices (01.04.2006)
Get full text
Journal Article
Formation of HfSiON/SiO sub(2)/Si-substrate gate stack with low leakage current for high-performance high- Kappa MISFETs
Yamaguchi, M, Sakoda, T, Minakata, H, Xiao, Shiqin, Morisaki, Y, Ikeda, K, Mishima, Y
Published in IEEE transactions on electron devices (01.01.2006)
Published in IEEE transactions on electron devices (01.01.2006)
Get full text
Journal Article