Hydrogen and deuterium termination of diamond for low surface resistance and surface step control
Geis, M.W., Varghese, J.O., Vardi, Alon, Kedzierski, J., Daulton, J., Calawa, D., Hollis, M.A., Wuorio, C.H., Turner, G.W., Warnock, S.M., Osadchy, T., Mallek, J., Melville, A., del Alamo, Jesus A., Zhang, Beijia
Published in Diamond and related materials (01.10.2021)
Published in Diamond and related materials (01.10.2021)
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Journal Article
Stable, low-resistance, 1.5 to 3.5 kΩ sq−1, diamond surface conduction with a mixed metal-oxide protective film
Geis, M.W., Varghese, J.O., Hollis, M.A., Yichen, Y., Nemanich, R.J., Wuorio, C.H., Zhang, Xi, Turner, G.W., Warnock, S.M., Vitale, S.A., Molnar, R.J., Osadchy, T., Zhang, B.
Published in Diamond and related materials (01.06.2020)
Published in Diamond and related materials (01.06.2020)
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Journal Article
Chemical and semiconducting properties of NO^sub 2^-activated H-terminated diamond
Geis, MW, Fedynyshyn, TH, Plauta, ME, Wade, TC, Wuorio, CH, Vitale, SA, Varghese, JO, Grotjohn, TA, Nemanich, RJ, Hollis, MA
Published in Diamond and related materials (01.04.2018)
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Published in Diamond and related materials (01.04.2018)
Journal Article