Improving the electrical and hysteresis performance of amorphous igzo thin-film transistors using co-sputtered zirconium silicon oxide gate dielectrics
Hung, Chien-Hsiung, Wang, Shui-Jinn, Liu, Pang-Yi, Wu, Chien-Hung, Yan, Hao-Ping, Wu, Nai-Sheng, Lin, Tseng-Hsing
Published in Materials science in semiconductor processing (15.08.2017)
Published in Materials science in semiconductor processing (15.08.2017)
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Journal Article
A room temperature process for the fabrication of amorphous indium gallium zinc oxide thin-film transistors with co-sputtered ZrxSi1−xO2 Gate dielectric and improved electrical and hysteresis performance
Hung, Chien-Hsiung, Wang, Shui-Jinn, Liu, Pang-Yi, Wu, Chien-Hung, Wu, Nai-Sheng, Yan, Hao-Ping, Lin, Tseng-Hsing
Published in Japanese Journal of Applied Physics (01.04.2017)
Published in Japanese Journal of Applied Physics (01.04.2017)
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Journal Article
Using co-sputtered ZrSiOx gate dielectrics to improve mobility and subthreshold swing of amorphous IGZO thin-film transistors
Chien-Hsiung Hung, Shui-Jinn Wang, Pang-Yi Liu, Chien-Hung Wu, Nai-Sheng Wu, Hao-Ping Yan, Tseng-Hsing Lin
Published in 2016 74th Annual Device Research Conference (DRC) (01.06.2016)
Published in 2016 74th Annual Device Research Conference (DRC) (01.06.2016)
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Conference Proceeding
Tadalafil for fetal growth restriction concerning integrity of data
Yao, FengXiang, Mao, JiaLei, Ding, HuiQing, Wu, NaiSheng
Published in Taiwanese journal of obstetrics & gynecology (01.03.2023)
Published in Taiwanese journal of obstetrics & gynecology (01.03.2023)
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Journal Article
A room temperature process for the fabrication of amorphous indium gallium zinc oxide thin-film transistors with co-sputtered Zr sub(x) Si sub(1-x) O sub(2) Gate dielectric and improved electrical and hysteresis performance
Hung, Chien-Hsiung, Wang, Shui-Jinn, Liu, Pang-Yi, Wu, Chien-Hung, Wu, Nai-Sheng, Yan, Hao-Ping, Lin, Tseng-Hsing
Published in Japanese Journal of Applied Physics (01.04.2017)
Published in Japanese Journal of Applied Physics (01.04.2017)
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Journal Article
A room temperature process for the fabrication of amorphous indium gallium zinc oxide thin-film transistors with co-sputtered Zr x Si 1− x O 2 Gate dielectric and improved electrical and hysteresis performance
Hung, Chien-Hsiung, Wang, Shui-Jinn, Liu, Pang-Yi, Wu, Chien-Hung, Wu, Nai-Sheng, Yan, Hao-Ping, Lin, Tseng-Hsing
Published in Japanese Journal of Applied Physics (01.04.2017)
Published in Japanese Journal of Applied Physics (01.04.2017)
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Journal Article