High-frequency, high-efficiency MSM photodetectors
Burm, J., Litvin, K.I., Woodard, D.W., Schaff, W.J., Mandeville, P., Jaspan, M.A., Gitin, M.M., Eastman, L.F.
Published in IEEE journal of quantum electronics (01.08.1995)
Published in IEEE journal of quantum electronics (01.08.1995)
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Journal Article
The effect of a high energy injection on the performance of mm wave Gunn oscillators
Greenwald, Z., Woodard, D.W., Calawa, A.R., Eastman, L.F.
Published in Solid-state electronics (01.07.1988)
Published in Solid-state electronics (01.07.1988)
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Journal Article
Modulation-doped MBE GaAs/n-AlxGa1-xAs MESFETs
Judaprawira, S., Wang, W.I., Chao, P.C., Wood, C.E.C., Woodard, D.W., Eastman, L.F.
Published in IEEE electron device letters (01.01.1981)
Published in IEEE electron device letters (01.01.1981)
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Journal Article
Modulation-doped MBE GaAs/n-Al x Ga 1-x As MESFETs
Judaprawira, S., Wang, W.I., Chao, P.C., Wood, C.E.C., Woodard, D.W., Eastman, L.F.
Published in IEEE electron device letters (01.01.1981)
Published in IEEE electron device letters (01.01.1981)
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Journal Article
The operation of kilowatt LSA oscillators
Bravman, J.S., Berry, J.D., Woodard, D.W., Eastman, L.F.
Published in 1970 International Electron Devices Meeting (1970)
Published in 1970 International Electron Devices Meeting (1970)
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Conference Proceeding
VA-7 GaAs planar doped barrier transistors
Malik, R.J., Hollis, M.A., Eastman, L.F., Woodard, D.W., Wood, C.E.C., AuCoin, T.R.
Published in IEEE transactions on electron devices (01.10.1981)
Published in IEEE transactions on electron devices (01.10.1981)
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Journal Article