Search Results - "Woan Yun Hsiao" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

High-Density FinFET One-Time Programmable Memory Cell With Intra-Fin-Cell-Isolation Technology

High-Density FinFET One-Time Programmable Memory Cell With Intra-Fin-Cell-Isolation Technology

by Peng, Ping Chun, Chen, Yu-Zheng, Hsiao, Woan Yun, Chen, Kuang-Hsin, Lin, Ching-Pin, Tien, Bor-Zen, Chang, Tzong-Sheng, Lin, Chrong Jung, King, Ya-Chin
Published in IEEE electron device letters (01.10.2015)

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Journal Article

A New High-Density Twin-Gate Isolation One-Time Programmable Memory Cell in Pure 28-nm CMOS Logic Process

A New High-Density Twin-Gate Isolation One-Time Programmable Memory Cell in Pure 28-nm CMOS Logic Process

by Hsiao, Woan Yun, Peng, Ping Chun, Chang, Tzong-Sheng, Chih, Yu-Der, Tsai, Wu-Chin, Chang, Meng-Fan, Chien, Tun-Fei, King, Ya-Chin, Lin, Chrong-Jung
Published in IEEE transactions on electron devices (01.01.2015)

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Journal Article

A new 28 nm high-k metal gate CMOS logic one-time programmable memory cell

A new 28 nm high-k metal gate CMOS logic one-time programmable memory cell

by Hsiao, Woan Yun, Mei, Chin Yu, Shen, Wen Chao, Chih, Yue Der, King, Ya-Chin, Lin, Chrong Jung
Published in Japanese Journal of Applied Physics (01.04.2014)

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Journal Article

A high density Twin-Gate OTP cell in pure 28nm CMOS process

A high density Twin-Gate OTP cell in pure 28nm CMOS process

by Woan Yun Hsiao, Chin Yu Mei, Wen Chao Shen, Tzong Sheng Chang, Yue Der Chih, Ya-Chin King, Chrong Jung Lin
Published in Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2014)

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Conference Proceeding

A high density FinFET one-time programmable cell with new intra-fin cell isolation for advanced system on chip applications

A high density FinFET one-time programmable cell with new intra-fin cell isolation for advanced system on chip applications

by Chen, Yu-Zheng, Yuan, Jo En, Peng, Ping Chun, Hsiao, Woan Yun, King, Ya-Chin, Lin, Chrong Jung
Published in Japanese Journal of Applied Physics (01.04.2016)

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Journal Article

A new 28nm high-k metal gate CMOS logic one-time programmable memory cell

A new 28nm high-k metal gate CMOS logic one-time programmable memory cell

by Hsiao, Woan Yun, Mei, Chin Yu, Shen, Wen Chao, Chih, Yue Der, King, Ya-Chin, Lin, Chrong Jung
Published in Japanese Journal of Applied Physics (01.01.2014)

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Journal Article

NON-VOLATILE MEMORY AND REFERENCE CURRENT GENERATOR THEREOF

NON-VOLATILE MEMORY AND REFERENCE CURRENT GENERATOR THEREOF

by HSIAO, Woan-Yun, HUANG, Chih-Yang
Year of Publication 16.05.2024

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Patent

One time programmable non-volatile memory cell on glass substrate

One time programmable non-volatile memory cell on glass substrate

by Hsiao, Woan-Yun, Sun, Wein-Town
Year of Publication 21.03.2023

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Patent

Memory structure and operation method thereof

Memory structure and operation method thereof

by Hsiao, Woan-Yun, Hsu, Chia-Jung, Sun, Wein-Town
Year of Publication 05.09.2023

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Patent

ONE TIME PROGRAMMABLE NON-VOLATILE MEMORY CELL ON GLASS SUBSTRATE

ONE TIME PROGRAMMABLE NON-VOLATILE MEMORY CELL ON GLASS SUBSTRATE

by HSIAO, Woan-Yun, SUN, Wein-Town
Year of Publication 12.08.2021

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Patent

MEMORY STRUCTURE AND OPERATION METHOD THEREOF

MEMORY STRUCTURE AND OPERATION METHOD THEREOF

by Hsiao, Woan-Yun, Hsu, Chia-Jung, Sun, Wein-Town
Year of Publication 17.03.2022

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Patent

Erasable programmable single-poly non-volatile memory cell and associated array structure

Erasable programmable single-poly non-volatile memory cell and associated array structure

by Chen, Wei-Ren, Hsiao, Woan-Yun, Sun, Wein-Town, Chen, Hsueh-Wei
Year of Publication 14.11.2023

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Patent

ERASABLE PROGRAMMABLE NON-VOLATILE MEMORY CELL

ERASABLE PROGRAMMABLE NON-VOLATILE MEMORY CELL

by HSIAO, Woan-Yun, SUN, Wein-Town, CHEN, Wei-Ren, CHEN, Hsueh-Wei
Year of Publication 12.10.2023

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Patent

Semiconductor structure with data storage structure and method for manufacturing the same

Semiconductor structure with data storage structure and method for manufacturing the same

by Hsiao, Woan-Yun, Chen, Huang-Kui, Chang, Tzong-Sheng, Lin, Chrong-Jung, King, Ya-Chin
Year of Publication 16.05.2023

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Patent

ERASABLE PROGRAMMABLE SINGLE-POLY NON-VOLATILE MEMORY CELL AND ASSOCIATED ARRAY STRUCTURE

ERASABLE PROGRAMMABLE SINGLE-POLY NON-VOLATILE MEMORY CELL AND ASSOCIATED ARRAY STRUCTURE

by HSIAO, Woan-Yun, SUN, Wein-Town, CHEN, Hsueh-Wei, CHEN, Wei-Ren
Year of Publication 20.04.2023

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Patent

ERASABLE PROGRAMMABLE SINGLE-POLY NON-VOLATILE MEMORY CELL AND ASSOCIATED ARRAY STRUCTURE

ERASABLE PROGRAMMABLE SINGLE-POLY NON-VOLATILE MEMORY CELL AND ASSOCIATED ARRAY STRUCTURE

by HSIAO, Woan-Yun, SUN, Wein-Town, CHEN, Hsueh-Wei, CHEN, Wei-Ren
Year of Publication 19.04.2023

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Patent

Non-volatile memory and reference current generator thereof

Non-volatile memory and reference current generator thereof

by HUANG, CHIH-YANG, HSIAO, WOAN-YUN
Year of Publication 16.05.2024

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Patent

One time programmable non-volatile memory cell on glass substrate

One time programmable non-volatile memory cell on glass substrate

by SUN, WEIN-TOWN, HSIAO, WOAN-YUN
Year of Publication 11.08.2022

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Patent

SEMICONDUCTOR STRUCTURE WITH DATA STORAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR STRUCTURE WITH DATA STORAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

by HSIAO, Woan-Yun, LIN, Chrong-Jung, CHANG, Tzong-Sheng, KING, Ya-Chin, CHEN, Huang-Kui
Year of Publication 17.12.2020

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Patent

Semiconductor structure with data storage structure

Semiconductor structure with data storage structure

by Hsiao, Woan-Yun, Chen, Huang-Kui, Chang, Tzong-Sheng, Lin, Chrong-Jung, King, Ya-Chin
Year of Publication 01.09.2020

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Patent