Search Results - "Witulski, A." :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

by Ball, D. R., Hutson, J. M., Javanainen, A., Lauenstein, J.-M., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Sierawski, B. D., Witulski, A. F., Reed, R. A., Schrimpf, R. D.
Published in IEEE transactions on nuclear science (01.01.2020)

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Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

by Witulski, A. F., Arslanbekov, R., Raman, A., Schrimpf, R. D., Sternberg, A. L., Galloway, K. F., Javanainen, A., Grider, D., Lichtenwalner, D. J., Hull, B.
Published in IEEE transactions on nuclear science (01.01.2018)

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Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs

Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs

by Ball, D. R., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Witulski, A. F., Reed, R. A., Schrimpf, R. D., Hutson, J. M., Lauenstein, J.-M.
Published in IEEE transactions on nuclear science (01.07.2021)

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Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs

Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs

by Ball, D. R., Sierawski, B. D., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Witulski, A. F., Reed, R. A., Schrimpf, R. D., Javanainen, A., Lauenstein, J.-M
Published in IEEE transactions on nuclear science (01.01.2019)

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Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes

Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes

by Cadena, R. M., Ball, D. R., Zhang, E. X., Islam, S., Senarath, A., McCurdy, M. W., Farzana, E., Speck, J. S., Karom, N., O'Hara, A., Tuttle, B. R., Pantelides, S. T., Witulski, A. F., Galloway, K. F., Alles, M. L., Reed, R. A., Fleetwood, D. M., Schrimpf, R. D.
Published in IEEE transactions on nuclear science (01.04.2023)

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Technology Scaling Comparison of Flip-Flop Heavy-Ion Single-Event Upset Cross Sections

Technology Scaling Comparison of Flip-Flop Heavy-Ion Single-Event Upset Cross Sections

by Gaspard, N. J., Jagannathan, S., Diggins, Z. J., King, M. P., Wen, S-J., Wong, R., Loveless, T. D., Lilja, K., Bounasser, M., Reece, T., Witulski, A. F., Holman, W. T., Bhuva, B. L., Massengill, L. W.
Published in IEEE transactions on nuclear science (01.12.2013)

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The Effect of Layout Topology on Single-Event Transient Pulse Quenching in a 65 nm Bulk CMOS Process

The Effect of Layout Topology on Single-Event Transient Pulse Quenching in a 65 nm Bulk CMOS Process

by Ahlbin, J R, Gadlage, M J, Ball, D R, Witulski, A W, Bhuva, B L, Reed, R A, Vizkelethy, G, Massengill, L W
Published in IEEE transactions on nuclear science (01.12.2010)

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Methodology for Identifying Radiation Effects in Robotic Systems With Mechanical and Control Performance Variations

Methodology for Identifying Radiation Effects in Robotic Systems With Mechanical and Control Performance Variations

by Howard, J. T., Barth, E. J., Schrimpf, R. D., Reed, R. A., Adams, L. C., Vibbert, D., Witulski, A. F.
Published in IEEE transactions on nuclear science (01.01.2019)

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Simulation of Transistor-Level Radiation Effects on System-Level Performance Parameters

Simulation of Transistor-Level Radiation Effects on System-Level Performance Parameters

by Witulski, A. F., Mahadevan, N., Kauppila, J., Karsai, G., Sternberg, A., Schrimpf, R. D., Reed, R. A., Adell, P., Schone, H., Daniel, A., Privat, A., Barnaby, H.
Published in IEEE transactions on nuclear science (01.07.2019)

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Charge Collection and Charge Sharing in a 130 nm CMOS Technology

Charge Collection and Charge Sharing in a 130 nm CMOS Technology

by Amusan, O.A., Witulski, A.F., Massengill, L.W., Bhuva, B.L., Fleming, P.R., Alles, M.L., Sternberg, A.L., Black, J.D., Schrimpf, R.D.
Published in IEEE transactions on nuclear science (01.12.2006)

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A Hardened-by-Design Technique for RF Digital Phase-Locked Loops

A Hardened-by-Design Technique for RF Digital Phase-Locked Loops

by Loveless, T.D., Massengill, L.W., Bhuva, B.L., Holman, W.T., Witulski, A.F., Boulghassoul, Y.
Published in IEEE transactions on nuclear science (01.12.2006)

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Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

by Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., Kaplar, R. J., Rajan, S., Van de Walle, C. G., Bellotti, E., Chua, C. L., Collazo, R., Coltrin, M. E., Cooper, J. A., Evans, K. R., Graham, S., Grotjohn, T. A., Heller, E. R., Higashiwaki, M., Islam, M. S., Juodawlkis, P. W., Khan, M. A., Koehler, A. D., Leach, J. H., Mishra, U. K., Nemanich, R. J., Pilawa‐Podgurski, R. C. N., Shealy, J. B., Sitar, Z., Tadjer, M. J., Witulski, A. F., Wraback, M., Simmons, J. A.
Published in Advanced electronic materials (01.01.2018)

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Time-Domain Reflectometry Measurements of Total-Ionizing-Dose Degradation of n MOSFETs

Time-Domain Reflectometry Measurements of Total-Ionizing-Dose Degradation of n MOSFETs

by Zhang, E. X., Fleetwood, D. M., Pate, N. D., Reed, R. A., Witulski, A. F., Schrimpf, R. D.
Published in IEEE transactions on nuclear science (01.12.2013)

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Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation

Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation

by Jagannathan, S., Loveless, T. D., Zhang, E. X., Fleetwood, D. M., Schrimpf, R. D., Haeffner, T. D., Kauppila, J. S., Mahatme, N., Bhuva, B. L., Alles, M. L., Holman, W. T., Witulski, A. F., Massengill, L. W.
Published in IEEE transactions on nuclear science (01.12.2013)

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Effects of Total-Ionizing-Dose Irradiation on SEU- and SET-Induced Soft Errors in Bulk 40-nm Sequential Circuits

Effects of Total-Ionizing-Dose Irradiation on SEU- and SET-Induced Soft Errors in Bulk 40-nm Sequential Circuits

by Chen, R. M., Diggins, Z. J., Mahatme, N. N., Wang, L., Zhang, E. X., Chen, Y. P., Liu, Y. N., Narasimham, B., Witulski, A. F., Bhuva, B. L., Fleetwood, D. M.
Published in IEEE transactions on nuclear science (01.01.2017)

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Analysis of Temporal Masking Effects on Master- and Slave-Type Flip-Flop SEUs and Related Applications

Analysis of Temporal Masking Effects on Master- and Slave-Type Flip-Flop SEUs and Related Applications

by Chen, R. M., Mahatme, N. N., Diggins, Z. J., Wang, L., Zhang, E. X., Chen, Y. P., Liu, Y. N., Narasimham, B., Witulski, A. F., Bhuva, B. L., Fleetwood, D. M.
Published in IEEE transactions on nuclear science (01.08.2018)

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Ionizing Dose-Tolerant Enhancement-Mode Cascode for High-Voltage Power Devices

Ionizing Dose-Tolerant Enhancement-Mode Cascode for High-Voltage Power Devices

by Witulski, A. F., Sternberg, A. L., Rowe, J. D., Schrimpf, R. D., Zydel, J., Schaf, J.
Published in IEEE transactions on nuclear science (01.01.2017)

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Effects of Temperature and Supply Voltage on SEU- and SET-Induced Errors in Bulk 40-nm Sequential Circuits

Effects of Temperature and Supply Voltage on SEU- and SET-Induced Errors in Bulk 40-nm Sequential Circuits

by Chen, R. M., Diggins, Z. J., Mahatme, N. N., Wang, L., Zhang, E. X., Chen, Y. P., Zhang, H., Liu, Y. N., Narasimham, B., Witulski, A. F., Bhuva, B. L., Fleetwood, D. M.
Published in IEEE transactions on nuclear science (01.08.2017)

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Impact of Temporal Masking of Flip-Flop Upsets on Soft Error Rates of Sequential Circuits

Impact of Temporal Masking of Flip-Flop Upsets on Soft Error Rates of Sequential Circuits

by Chen, R. M., Mahatme, N. N., Diggins, Z. J., Wang, L., Zhang, E. X., Chen, Y. P., Liu, Y. N., Narasimham, B., Witulski, A. F., Bhuva, B. L., Fleetwood, D. M.
Published in IEEE transactions on nuclear science (01.08.2017)

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Radiation Hardening of Voltage References Using Chopper Stabilization

Radiation Hardening of Voltage References Using Chopper Stabilization

by Shetler, K. J., Atkinson, N. M., Holman, W. T., Kauppila, J. S., Loveless, T. D., Witulski, A. F., Bhuva, B. L., Zhang, E. X., Massengill, L. W.
Published in IEEE transactions on nuclear science (01.12.2015)

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