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Published in Journal of applied physics (07.07.2024)
Published in Journal of applied physics (07.07.2024)
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Observation of anti-damping spin–orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3
DC, Mahendra, Shao, Ding-Fu, Hou, Vincent D.-H., Vailionis, Arturas, Quarterman, P., Habiboglu, Ali, Venuti, M. B., Xue, Fen, Huang, Yen-Lin, Lee, Chien-Min, Miura, Masashi, Kirby, Brian, Bi, Chong, Li, Xiang, Deng, Yong, Lin, Shy-Jay, Tsai, Wilman, Eley, Serena, Wang, Wei-Gang, Borchers, Julie A., Tsymbal, Evgeny Y., Wang, Shan X.
Published in Nature materials (01.05.2023)
Published in Nature materials (01.05.2023)
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Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co] N
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Published in Nature communications (04.07.2023)
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Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors
Schulte-Braucks, Christian, Pandey, Rahul, Sajjad, Redwan Noor, Barth, Mike, Ghosh, Ram Krishna, Grisafe, Ben, Sharma, Pankaj, von den Driesch, Nils, Vohra, Anurag, Rayner, Gilbert Bruce, Loo, Roger, Mantl, Siegfried, Buca, Dan, Chih-Chieh Yeh, Cheng-Hsien Wu, Tsai, Wilman, Antoniadis, Dimitri A., Datta, Suman
Published in IEEE transactions on electron devices (01.10.2017)
Published in IEEE transactions on electron devices (01.10.2017)
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Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf0.5Zr0.5O2 Thin Film Capacitors
Saini, Balreen, Huang, Fei, Choi, Yoon‐Young, Yu, Zhouchangwan, Thampy, Vivek, Baniecki, John D., Tsai, Wilman, McIntyre, Paul C.
Published in Advanced electronic materials (01.06.2023)
Published in Advanced electronic materials (01.06.2023)
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Spin–orbit torques of an in-plane magnetized system modulated by the spin transport in the ferromagnetic Co layer
Xue, Fen, Lin, Shy-Jay, Li, Peng, Hwang, William, Huang, Yen-Lin, Tsai, Wilman, Wang, Shan X.
Published in APL materials (01.10.2021)
Published in APL materials (01.10.2021)
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Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory
Li, Xiang, Lin, Shy-Jay, Dc, Mahendra, Liao, Yu-Ching, Yao, Chengyang, Naeemi, Azad, Tsai, Wilman, Wang, Shan X.
Published in IEEE journal of the Electron Devices Society (2020)
Published in IEEE journal of the Electron Devices Society (2020)
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High-performance MoS2 field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm)
Lingming Yang, Majumdar, Kausik, Yuchen Du, Han Liu, Heng Wu, Hatzistergos, Michael, Hung, P. Y., Tieckelmann, Robert, Tsai, Wilman, Hobbs, Chris, Ye, Peide D.
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
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Conference Proceeding
How Important Is the Metal–Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus?
Yang, Lingming, Charnas, Adam, Qiu, Gang, Lin, Yu-Ming, Lu, Chun-Chieh, Tsai, Wilman, Paduano, Qing, Snure, Michael, Ye, Peide D
Published in ACS omega (31.08.2017)
Published in ACS omega (31.08.2017)
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Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
Yang, Lingming, Majumdar, Kausik, Liu, Han, Du, Yuchen, Wu, Heng, Hatzistergos, Michael, Hung, P. Y, Tieckelmann, Robert, Tsai, Wilman, Hobbs, Chris, Ye, Peide D
Published in Nano letters (12.11.2014)
Published in Nano letters (12.11.2014)
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Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) With Four Bits per SOT Programming Line
Hwang, William, Xue, Fen, Song, Ming-Yuan, Hsu, Chen-Feng, Chen, T. C., Tsai, Wilman, Bao, Xinyu, Wang, Shan X.
Published in IEEE electron device letters (01.10.2024)
Published in IEEE electron device letters (01.10.2024)
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On-Device Continual Learning With STT-Assisted-SOT MRAM-Based In-Memory Computing
Zhang, Fan, Sridharan, Amitesh, Hwang, William, Xue, Fen, Tsai, Wilman, Wang, Shan Xiang, Fan, Deliang
Published in IEEE transactions on computer-aided design of integrated circuits and systems (01.08.2024)
Published in IEEE transactions on computer-aided design of integrated circuits and systems (01.08.2024)
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Atomic Layer Deposition of WO3‑Doped In2O3 for Reliable and Scalable BEOL-Compatible Transistors
Yoo, Chanyoung, Hartanto, Jonathan, Saini, Balreen, Tsai, Wilman, Thampy, Vivek, Niavol, Somayeh Saadat, Meng, Andrew C., McIntyre, Paul C.
Published in Nano letters (15.05.2024)
Published in Nano letters (15.05.2024)
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Journal Article
Atomic Layer Deposition of WO 3 -Doped In 2 O 3 for Reliable and Scalable BEOL-Compatible Transistors
Yoo, Chanyoung, Hartanto, Jonathan, Saini, Balreen, Tsai, Wilman, Thampy, Vivek, Niavol, Somayeh Saadat, Meng, Andrew C, McIntyre, Paul C
Published in Nano letters (15.05.2024)
Published in Nano letters (15.05.2024)
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Enhanced Switching Reliability of Hf 0.5 Zr 0.5 O 2 Ferroelectric Films Induced by Interface Engineering
Huang, Fei, Saini, Balreen, Yu, Zhouchangwan, Yoo, Chanyoung, Thampy, Vivek, He, Xiaoqing, Baniecki, John D., Tsai, Wilman, Meng, Andrew C., McIntyre, Paul C., Wong, Simon
Published in ACS applied materials & interfaces (01.11.2023)
Published in ACS applied materials & interfaces (01.11.2023)
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Journal Article
Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering
Huang, Fei, Saini, Balreen, Yu, Zhouchangwan, Yoo, Chanyoung, Thampy, Vivek, He, Xiaoqing, Baniecki, John D., Tsai, Wilman, Meng, Andrew C., McIntyre, Paul C., Wong, Simon
Published in ACS applied materials & interfaces (01.11.2023)
Published in ACS applied materials & interfaces (01.11.2023)
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Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers
Chagarov, Evgueni A., Kavrik, Mahmut S., Fang, Ziwei, Tsai, Wilman, Kummel, Andrew C.
Published in Applied surface science (15.06.2018)
Published in Applied surface science (15.06.2018)
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Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia–Zirconia Alloys
Yu, Zhouchangwan, Saini, Balreen, Liu, Yunzhi, Huang, Fei, Mehta, Apurva, Baniecki, John D., Wong, H.-S. Philip, Tsai, Wilman, McIntyre, Paul C.
Published in ACS applied materials & interfaces (30.11.2022)
Published in ACS applied materials & interfaces (30.11.2022)
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Journal Article
Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects
Huang, Fei, Saini, Balreen, Wan, Lei, Lu, Haidong, He, Xiaoqing, Qin, Shengjun, Tsai, Wilman, Gruverman, Alexei, Meng, Andrew C., Wong, H.-S. Philip, McIntyre, Paul C., Wong, Simon
Published in ACS nano (09.07.2024)
Published in ACS nano (09.07.2024)
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Energy Efficient Computing With High-Density, Field-Free STT-Assisted SOT-MRAM (SAS-MRAM)
Hwang, William, Xue, Fen, Zhang, Fan, Song, Ming-Yuan, Lee, Chien-Min, Turgut, Emrah, Chen, T. C., Bao, Xinyu, Tsai, Wilman, Fan, Deliang, Wang, Shan X.
Published in IEEE transactions on magnetics (01.03.2023)
Published in IEEE transactions on magnetics (01.03.2023)
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