Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs
Romanczyk, Brian, Wienecke, Steven, Guidry, Matthew, Li, Haoran, Ahmadi, Elaheh, Zheng, Xun, Keller, Stacia, Mishra, Umesh K.
Published in IEEE transactions on electron devices (01.01.2018)
Published in IEEE transactions on electron devices (01.01.2018)
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Journal Article
N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance
Koksaldi, Onur S., Haller, Jeffrey, Li, Haoran, Romanczyk, Brian, Guidry, Matthew, Wienecke, Steven, Keller, Stacia, Mishra, Umesh K.
Published in IEEE electron device letters (01.07.2018)
Published in IEEE electron device letters (01.07.2018)
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Journal Article
Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures
Bisi, Davide, Wienecke, Steven, Romanczyk, Brian, Li, Haoran, Ahmadi, Elaheh, Keller, Stacia, Guidry, Matthew, De Santi, Carlo, Meneghini, Matteo, Meneghesso, Gaudenzio, Mishra, Umesh K., Zanoni, Enrico
Published in IEEE electron device letters (01.03.2020)
Published in IEEE electron device letters (01.03.2020)
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Journal Article
Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs
Bisi, Davide, De Santi, Carlo, Meneghini, Matteo, Wienecke, Steven, Guidry, Matt, Li, Haoran, Ahmadi, Elaheh, Keller, Stacia, Mishra, Umesh K., Meneghesso, Gaudenzio, Zanoni, Enrico
Published in IEEE electron device letters (01.07.2018)
Published in IEEE electron device letters (01.07.2018)
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Journal Article
N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz
Wienecke, Steven, Romanczyk, Brian, Guidry, Matthew, Li, Haoran, Ahmadi, Elaheh, Hestroffer, Karine, Zheng, Xun, Keller, Stacia, Mishra, Umesh K.
Published in IEEE electron device letters (01.03.2017)
Published in IEEE electron device letters (01.03.2017)
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Journal Article
Observation of I D -V D Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures
Bisi, Davide, Wienecke, Steven, Romanczyk, Brian, Li, Haoran, Ahmadi, Elaheh, Keller, Stacia, Guidry, Matthew, De Santi, Carlo, Meneghini, Matteo, Meneghesso, Gaudenzio, Mishra, Umesh K., Zanoni, Enrico
Published in IEEE electron device letters (01.03.2020)
Published in IEEE electron device letters (01.03.2020)
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Journal Article
N-Polar Deep Recess MISHEMTs With Record 2.9 W/mm at 94 GHz
Wienecke, Steven, Romanczyk, Brian, Guidry, Matthew, Li, Haoran, Zheng, Xun, Ahmadi, Elaheh, Hestroffer, Karine, Megalini, Ludovico, Keller, Stacia, Mishra, Umesh K.
Published in IEEE electron device letters (01.06.2016)
Published in IEEE electron device letters (01.06.2016)
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Journal Article
N-Polar GaN MIS-HEMTs on Sapphire With High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage
Zheng, Xun, Guidry, Matthew, Li, Haoran, Ahmadi, Elaheh, Hestroffer, Karine, Romanczyk, Brian, Wienecke, Steven, Keller, Stacia, Mishra, Umesh K.
Published in IEEE electron device letters (01.01.2016)
Published in IEEE electron device letters (01.01.2016)
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Journal Article
Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition
Li, Haoran, Mazumder, Baishakhi, Bonef, Bastien, Keller, Stacia, Wienecke, Steven, Speck, James S, Denbaars, Steven P, Mishra, Umesh K
Published in Semiconductor science and technology (01.11.2017)
Published in Semiconductor science and technology (01.11.2017)
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Journal Article
Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High f\cdot V
Zheng, Xun, Li, Haoran, Guidry, Matthew, Romanczyk, Brian, Ahmadi, Elaheh, Hestroffer, Karine, Wienecke, Steven, Keller, Stacia, Mishra, Umesh K.
Published in IEEE electron device letters (01.03.2018)
Published in IEEE electron device letters (01.03.2018)
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Journal Article
InGaN lattice constant engineering via growth on (In,Ga)N GaN nanostripe arrays
Keller, Stacia, Lund, Cory, Whyland, Tyler, Hu, Yanling, Neufeld, Carl, Chan, Silvia, Wienecke, Steven, Wu, Feng, Nakamura, Shuji, Speck, James S, DenBaars, Steven P, Mishra, Umesh K
Published in Semiconductor science and technology (01.10.2015)
Published in Semiconductor science and technology (01.10.2015)
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Journal Article
Extraction of net interfacial polarization charge from Al{sub 0.54}In{sub 0.12}Ga{sub 0.34}N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition
Laurent, Matthew A., Gupta, Geetak, Wienecke, Steven, Muqtadir, Azim A., Keller, Stacia, Mishra, Umesh K., DenBaars, Steven P., Materials Department, University of California, Santa Barbara, California 93106
Published in Journal of applied physics (14.11.2014)
Published in Journal of applied physics (14.11.2014)
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Journal Article
Extraction of net interfacial polarization charge from Al0.54In0.12Ga0.34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition
Laurent, Matthew A., Gupta, Geetak, Wienecke, Steven, Muqtadir, Azim A., Keller, Stacia, DenBaars, Steven P., Mishra, Umesh K.
Published in Journal of applied physics (14.11.2014)
Published in Journal of applied physics (14.11.2014)
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Journal Article
Small-signal model extraction of mm-wave N-polar GaN MISHEMT exhibiting record performance: Analysis of gain and validation by 94 GHz loadpull
Guidry, Matthew, Wienecke, Steven, Romanczyk, Brian, Li, Haoran, Zheng, Xun, Ahmadi, Elahe, Hestroffer, Karine, Keller, Stacia, Mishra, Umesh K.
Published in 2016 IEEE MTT-S International Microwave Symposium (IMS) (01.05.2016)
Published in 2016 IEEE MTT-S International Microwave Symposium (IMS) (01.05.2016)
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Conference Proceeding
N-polar GaN MIS-HEMTs on sapphire with a proposed figure of merit fmax·VDS, Q of 9.5THz.V
Zheng, Xun, Guidry, Matthew, Li, Haoran, Romanczyk, Brian, Ahmadi, Elaheh, Hestroffer, Karine, Wienecke, Steven, Keller, Stacia, Mishra, Umesh K.
Published in 2017 75th Annual Device Research Conference (DRC) (01.06.2017)
Published in 2017 75th Annual Device Research Conference (DRC) (01.06.2017)
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Conference Proceeding
mm-Wave N-polar GaN MISHEMT with a self-aligned recessed gate exhibiting record 4.2 W/mm at 94 GHz on Sapphire
Romanczyk, Brian, Wienecke, Steven, Guidry, Matthew, Li, Haoran, Hestroffer, Karine, Ahmadi, Elaheh, Zheng, Xun, Keller, Stacia, Mishra, Umesh K.
Published in 2016 74th Annual Device Research Conference (DRC) (01.06.2016)
Published in 2016 74th Annual Device Research Conference (DRC) (01.06.2016)
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Conference Proceeding
N-polar GaN Cap MISHEMT with record 6.7 W/mm at 94 GHz
Wienecke, Steven, Romanczyk, Brian, Guidry, Matthew, Li, Haoran, Ahmadi, Elaheh, Zheng, Xun, Hestroffer, Karine, Keller, Stacia, Mishra, Umesh K.
Published in 2016 74th Annual Device Research Conference (DRC) (01.06.2016)
Published in 2016 74th Annual Device Research Conference (DRC) (01.06.2016)
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Conference Proceeding
Effects of strain relaxation on the photoluminescence of semipolar InGaN
Metcalfe, G. D., Gallinat, C. S., Shen, H., Wraback, M., Wienecke, S., Young, E. C., Speck, J. S.
Published in 2012 Conference on Lasers and Electro-Optics (CLEO) (01.05.2012)
Published in 2012 Conference on Lasers and Electro-Optics (CLEO) (01.05.2012)
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Conference Proceeding
High frequency N-polar GaN planar MIS-HEMTs on sapphire with high breakdown and low dispersion
Zheng, Xun, Li, Haoran, Ahmadi, Elaheh, Hestroffer, Karine, Guidry, Matthew, Romanczyk, Brian, Wienecke, Steven, Keller, Stacia, Mishra, Umesh K.
Published in 2016 Lester Eastman Conference (LEC) (01.08.2016)
Published in 2016 Lester Eastman Conference (LEC) (01.08.2016)
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Conference Proceeding
HIGH VOLTAGE III-N DEVICES AND STRUCTURES WITH REDUCED CURRENT DEGRADATION
RHODES, David Michael, BISI, Davide, SWENSON, Brian L, MISHRA, Umesh, GUPTA, Geetak, WIENECKE, Steven, HWANG, Robin Christine
Year of Publication 01.02.2024
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Year of Publication 01.02.2024
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