Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures
Shah, Vishal Ajit, Myronov, Maksym, Wongwanitwatana, Chalermwat, Bawden, Lewis, Prest, Martin J, Richardson-Bullock, James S, Rhead, Stephen, Parker, Evan H C, Whall, Terrance E, Leadley, David R
Published in Science and technology of advanced materials (01.10.2012)
Published in Science and technology of advanced materials (01.10.2012)
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