A dual core oxide 8T SRAM cell with low Vccmin and dual voltage supplies in 45nm triple gate oxide and multi Vt CMOS for very high performance yet low leakage mobile SoC applications
Ping Liu, Wang, J, Phan, M, Garg, M, Zhang, R, Cassier, A, Chua-Eoan, L, Andreev, B, Weyland, S, Ekbote, S, Han, M, Fischer, J, Yeap, Geoffrey C.-F, Ping-Wei Wang, Li, Q, Hou, C S, Lee, S B, Wang, Y F, Lin, S S, Cao, M, Mii, Y J
Published in 2010 Symposium on VLSI Technology (01.06.2010)
Published in 2010 Symposium on VLSI Technology (01.06.2010)
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