Structure and thermal stability of graded Ta-TaN diffusion barriers between Cu and SiO2
HÜBNER, R, HECKER, M, MATTERN, N, HOFFMANN, V, WETZIG, K, WENGER, Ch, ENGELMANN, H.-J, WENZEL, Ch, ZSCHECH, E, BARTHA, J. W
Published in Thin solid films (01.08.2003)
Published in Thin solid films (01.08.2003)
Get full text
Journal Article
Effect of nitrogen content on the degradation mechanisms of thin Ta–Si–N diffusion barriers for Cu metallization
Hübner, R., Hecker, M., Mattern, N., Hoffmann, V., Wetzig, K., Heuer, H., Wenzel, Ch, Engelmann, H.-J., Gehre, D., Zschech, E.
Published in Thin solid films (03.04.2006)
Published in Thin solid films (03.04.2006)
Get full text
Journal Article
Influence of nitrogen content on the crystallization behavior of thin Ta–Si–N diffusion barriers
Hübner, R., Hecker, M., Mattern, N., Voss, A., Acker, J., Hoffmann, V., Wetzig, K., Engelmann, H.-J., Zschech, E., Heuer, H., Wenzel, Ch
Published in Thin solid films (01.12.2004)
Published in Thin solid films (01.12.2004)
Get full text
Journal Article
Degradation mechanisms of Ta and Ta–Si diffusion barriers during thermal stressing
Hübner, R., Hecker, M., Mattern, N., Hoffmann, V., Wetzig, K., Wenger, Ch, Engelmann, H.-J., Wenzel, Ch, Zschech, E.
Published in Thin solid films (30.06.2004)
Published in Thin solid films (30.06.2004)
Get full text
Journal Article
Structure and thermal stability of graded Ta–TaN diffusion barriers between Cu and SiO 2
Hübner, R, Hecker, M, Mattern, N, Hoffmann, V, Wetzig, K, Wenger, Ch, Engelmann, H.-J, Wenzel, Ch, Zschech, E, Bartha, J.W
Published in Thin solid films (2003)
Published in Thin solid films (2003)
Get full text
Journal Article
Void formation in the Cu layer during thermal treatment of SiN x /Cu/Ta 73 Si 27 /SiO 2 /Si systems
Hübner, R., Reiche, R., Hecker, M., Mattern, N., Hoffmann, V., Wetzig, K., Heuer, H., Wenzel, Ch, Engelmann, H.‐J., Zschech, E.
Published in Crystal research and technology (1979) (01.01.2005)
Published in Crystal research and technology (1979) (01.01.2005)
Get full text
Journal Article
Void formation in the Cu layer during thermal treatment of SiNx/Cu/Ta73Si27/SiO2/Si systems
Hübner, R., Reiche, R., Hecker, M., Mattern, N., Hoffmann, V., Wetzig, K., Heuer, H., Wenzel, Ch, Engelmann, H.-J., Zschech, E.
Published in Crystal research and technology (1979) (01.01.2005)
Published in Crystal research and technology (1979) (01.01.2005)
Get full text
Journal Article
Metallization of sub-micron trenches and vias with high aspect ratio
Siemroth, P, Wenzel, Ch, Klimes, W, Schultrich, B, Schülke, T
Published in Thin solid films (31.10.1997)
Published in Thin solid films (31.10.1997)
Get full text
Journal Article
Dreidimensionaler Chip-Beschleunigungssensor
Qu, W., Wenzel, Ch, Jahn, Α., Zeidler, D., Urbansky, N.
Published in Technisches Messen (01.06.1998)
Published in Technisches Messen (01.06.1998)
Get full text
Journal Article