Very High Parallel-Plane Surface Electric Field of 4.3 MV/cm in Ga2O3 Schottky Barrier Diodes with PtOx Contacts
Saraswat, Devansh, Li, Wenshen, Nomoto, Kazuki, Jena, Debdeep, Xing, Huili Grace
Published in 2020 Device Research Conference (DRC) (01.06.2020)
Published in 2020 Device Research Conference (DRC) (01.06.2020)
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Conference Proceeding
On the PBTI Reliability of Low EOT Negative Capacitance 1.8 nm HfO2-ZrO2 Superlattice Gate Stack on Lg=90 nm nFETs
Shanker, Nirmaan, Wang, Li-Chen, Cheema, Suraj, Li, Wenshen, Choudhury, Nilotpal, Hu, Chenming, Mahapatra, Souvik, Salahuddin, Sayeef
Published in 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (12.06.2022)
Published in 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (12.06.2022)
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Conference Proceeding
1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes
Li, Wenshen, Nomoto, Kazuki, Hu, Zongyang, Tanen, Nicholas, Sasaki, Kohei, Kuramata, Akito, Jena, Debdeep, Xing, Huili Grace
Published in 2018 76th Device Research Conference (DRC) (01.06.2018)
Published in 2018 76th Device Research Conference (DRC) (01.06.2018)
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Conference Proceeding
The complete mitochondrial genome of the Aluterus monoceros
Li, Wenshen, Zhang, Guoqing, Wen, Xin, Wang, Qian, Chen, Guohua
Published in Mitochondrial DNA. Part A. DNA mapping, sequencing, and analysis (03.07.2016)
Published in Mitochondrial DNA. Part A. DNA mapping, sequencing, and analysis (03.07.2016)
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Journal Article
Barrier Height Stability and Reverse Leakage Mechanisms in Ni/Ga2O3 (001) Schottky Barrier Diodes
Li, Wenshen, Nornoto, Kazuki, Hu, Zongyang, Jena, Debdeep, Xing, Huili Grace
Published in 2019 Device Research Conference (DRC) (01.06.2019)
Published in 2019 Device Research Conference (DRC) (01.06.2019)
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Conference Proceeding
Field-plated Ga2O3 Trench Schottky Barrier Diodes with a Record High Figure-of-merit of 0.78 GW/cm2
Li, Wenshen, Nomoto, Kazuki, Hu, Zongyang, Jena, Debdeep, Xing, Huili Grace
Published in 2019 Device Research Conference (DRC) (01.06.2019)
Published in 2019 Device Research Conference (DRC) (01.06.2019)
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Conference Proceeding
Enhancement of punch-through voltage in GaN with buried p-type layer utilizing polarization-induced doping
Li, Wenshen, Zhu, Mingda, Nomoto, Kazuki, Hu, Zongyang, Gao, Xiang, Pilla, Manyam, Jena, Debdeep, Xing, Huili Grace
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
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Conference Proceeding
Ultrathin ferroic HfO 2 -ZrO 2 superlattice gate stack for advanced transistors
Cheema, Suraj S, Shanker, Nirmaan, Wang, Li-Chen, Hsu, Cheng-Hsiang, Hsu, Shang-Lin, Liao, Yu-Hung, San Jose, Matthew, Gomez, Jorge, Chakraborty, Wriddhi, Li, Wenshen, Bae, Jong-Ho, Volkman, Steve K, Kwon, Daewoong, Rho, Yoonsoo, Pinelli, Gianni, Rastogi, Ravi, Pipitone, Dominick, Stull, Corey, Cook, Matthew, Tyrrell, Brian, Stoica, Vladimir A, Zhang, Zhan, Freeland, John W, Tassone, Christopher J, Mehta, Apurva, Saheli, Ghazal, Thompson, David, Suh, Dong Ik, Koo, Won-Tae, Nam, Kab-Jin, Jung, Dong Jin, Song, Woo-Bin, Lin, Chung-Hsun, Nam, Seunggeol, Heo, Jinseong, Parihar, Narendra, Grigoropoulos, Costas P, Shafer, Padraic, Fay, Patrick, Ramesh, Ramamoorthy, Mahapatra, Souvik, Ciston, Jim, Datta, Suman, Mohamed, Mohamed, Hu, Chenming, Salahuddin, Sayeef
Published in Nature (London) (01.04.2022)
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Published in Nature (London) (01.04.2022)
Journal Article
2.44 kV Ga2O3 vertical trench Schottky barrier diodes with very low reverse leakage current
Li, Wenshen, Hu, Zongyang, Nomoto, Kazuki, Jinno, Riena, Zhang, Zexuan, Tu, Thieu Quang, Sasaki, Kohei, Kuramata, Akito, Jena, Debdeep, Xing, Huili Grace
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
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Conference Proceeding
(Invited) GaN Power Electronics and Associated Fundamental Limits
Xing, Huili Grace, Li, Wenshen, Nomoto, Kazuki, Jena, Debdeep
Published in Meeting abstracts (Electrochemical Society) (23.11.2020)
Published in Meeting abstracts (Electrochemical Society) (23.11.2020)
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Journal Article
High-Performance Vertical β-Ga2 O3 Schottky Barrier Diodes Featuring P-NiO JTE with Adjustable Conductivity
Hao, Weibing, Wu, Feihong, Li, Wenshen, Xu, Guangwei, Xie, Xuan, Zhou, Kai, Guo, Wei, Zhou, Xuanze, He, Qiming, Zhao, Xiaolong, Yang, Shu, Long, Shibing
Published in 2022 International Electron Devices Meeting (IEDM) (03.12.2022)
Published in 2022 International Electron Devices Meeting (IEDM) (03.12.2022)
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Conference Proceeding
High voltage gallium oxide (Ga2O3) trench MOS barrier schottky and methods of fabricating same
Xing, Huili Grace, Jena, Debdeep, Nomoto, Kazuki, Li, Wenshen, Hu, Zongyang
Year of Publication 06.02.2024
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Year of Publication 06.02.2024
Patent
VERTICAL GALLIUM OXIDE (GA2O3) POWER FETS
Jena, Debdeep, Nomoto, Kazuki, Xing, Grace Huili, Hu, Zongyang, Li, Wenshen
Year of Publication 12.10.2023
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Year of Publication 12.10.2023
Patent
Recent Progress of GaN-Based Vertical Devices
Nomoto, Kazuki, Hu, Zongyang, Li, Wenshen, Zhu, Mingda, Lee, Kevin, Jena, Debdeep, Xing, Huili Grace
Published in Meeting abstracts (Electrochemical Society) (01.09.2019)
Published in Meeting abstracts (Electrochemical Society) (01.09.2019)
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Journal Article
Vertical gallium oxide (GA2O3) power FETs
Jena, Debdeep, Nomoto, Kazuki, Xing, Grace Huili, Hu, Zongyang, Li, Wenshen
Year of Publication 01.08.2023
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Year of Publication 01.08.2023
Patent