Search Results - "Weng, Wu-Te" :: K.UTB vyhledávací portál

Ultralow Capacitance Transient Voltage Suppressor Design

by Lo, Kuo-Hsuan, Huang, Chien-Hao, Weng, Wu-Te, Huang, Tsung-Yi, Su, Hung-Der, Gong, Jeng, Huang, Chih-Fang
Published in IEEE transactions on electron devices (01.08.2016)

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Failure mechanism for input buffer under CDM test

by Kao, Tzu-Cheng, Hung, Chung-Yu, Lee, Jian-Hsing, Lien, Chen-Hsin, Chiu, Chien-Wei, Lo, Kuo-Hsuan, Su, Hung-Der, Weng, Wu-Te
Published in Electronics letters (24.04.2014)

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Effects of Plasma Damage on Metal–Insulator–Metal Capacitors and Transistors for Advanced Mixed-Signal/Radio-Frequency Metal–Oxide–Semiconductor Field-Effect Transistor Technology

by Weng, Wu-Te, Lee, Yao-Jen, Lin, Hong-Chih, Huang, Tiao-Yuan
Published in Japanese Journal of Applied Physics (01.08.2009)

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Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology

by Weng, Wu-Te, Lee, Yao-Jen, Lin, Horng-Chih, Huang, Tiao-Yuan
Published in International journal of plasma science and engineering (2009)

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A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO2/poly-gate complementary metal oxide semiconductor technology

by Weng, Wu-Te, Lee, Yao-Jen, Lin, Horng-Chih, Huang, Tiao-Yuan
Published in Solid-state electronics (01.04.2010)

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A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO sub(2/poly-gate complementary metal oxide semiconductor technology)

by Weng, Wu-Te, Lee, Yao-Jen, Lin, Horng-Chih, Huang, Tiao-Yuan
Published in Solid-state electronics (01.04.2010)

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The positive trigger voltage lowering effect for latch-up

by LEE, Jian-Hsing, WENG, Wu-Te, SHIH, Jiaw-Ren, YU, Kuo-Feng, ONG, Tong-Chern
Published in Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743) (2004)

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