Site response analysis of vertical ground motion in consideration of soil nonlinearity
Tsai, Chi-Chin, Liu, Hsing-Wen
Published in Soil dynamics and earthquake engineering (1984) (01.11.2017)
Published in Soil dynamics and earthquake engineering (1984) (01.11.2017)
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Journal Article
Experimental investigation of the reliability issue of RRAM based on high resistance state conduction
Zhang, Lijie, Hsu, Yen-Ya, Chen, Frederick T, Lee, Heng-Yuan, Chen, Yu-Sheng, Chen, Wei-Su, Gu, Pei-Yi, Liu, Wen-Hsing, Wang, Shun-Min, Tsai, Chen-Han, Huang, Ru, Tsai, Ming-Jinn
Published in Nanotechnology (24.06.2011)
Published in Nanotechnology (24.06.2011)
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Journal Article
A comprehensive model of project team technical performance
Liu, Wen-Hsing, Cross, Jennifer A.
Published in International journal of project management (01.10.2016)
Published in International journal of project management (01.10.2016)
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Journal Article
Interface effect of oxygen doping in polythiophene
Liu, Chien-Cheng, Yang, Chia-Ming, Liu, Wen-Hsing, Liao, Hua-Hsien, Horng, Sheng-Fu, Meng, Hsin-Fei
Published in Synthetic metals (01.06.2009)
Published in Synthetic metals (01.06.2009)
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Journal Article
New Tabu search heuristics for the dynamic facility layout problem
McKendall, Alan R., Liu, Wen-Hsing
Published in International journal of production research (01.02.2012)
Published in International journal of production research (01.02.2012)
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Journal Article
Robust High-Resistance State and Improved Endurance of HfOX Resistive Memory by Suppression of Current Overshoot
CHEN, Yu-Sheng, LEE, Heng-Yuan, TSAI, Ming-Jinn, LIEN, Chenhsin, CHEN, Pang-Shiu, LIU, Wen-Hsing, WANG, Sum-Min, GU, Pei-Yi, HSU, Yen-Ya, TSAI, Chen-Han, CHEN, Wei-Su, CHEN, Frederick
Published in IEEE electron device letters (01.11.2011)
Published in IEEE electron device letters (01.11.2011)
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Journal Article
Understanding team mental models affecting Kaizen event success
Liu, Wen-Hsing, Asio, Sarah, Cross, Jennifer, Glover, Wiljeana J, Van Aken, Eileen
Published in Team performance management (12.10.2015)
Published in Team performance management (12.10.2015)
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Journal Article
Good Endurance and Memory Window for Ti/HfOx Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer
CHEN, Yu-Sheng, LEE, Heng-Yuan, LIEN, Chenhsin, CHEN, Pang-Shiu, GU, Pei-Yi, LIU, Wen-Hsing, CHEN, Wei-Su, HSU, Yen-Ya, TSAI, Chen-Han, CHEN, Frederick, TSAI, Ming-Jinn
Published in IEEE electron device letters (01.03.2011)
Published in IEEE electron device letters (01.03.2011)
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Journal Article
Robust High-Resistance State and Improved Endurance of \hbox Resistive Memory by Suppression of Current Overshoot
Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen, Wen-Hsing Liu, Sum-Min Wang, Pei-Yi Gu, Yen-Ya Hsu, Chen-Han Tsai, Wei-Su Chen, Chen, F., Ming-Jinn Tsai, Chenhsin Lien
Published in IEEE electron device letters (01.11.2011)
Published in IEEE electron device letters (01.11.2011)
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Journal Article
Good Endurance and Memory Window for \hbox Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer
Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen, Pei-Yi Gu, Wen-Hsing Liu, Wei-Su Chen, Yen-Ya Hsu, Chen-Han Tsai, Chen, Frederick, Ming-Jinn Tsai, Chenhsin Lien
Published in IEEE electron device letters (01.03.2011)
Published in IEEE electron device letters (01.03.2011)
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Journal Article
Size dependence of TiN/HfO2/Ti MIM ReRAM resistance states: Model and experimental results
Chen, Frederick T., Lee, Heng-Yuan, Chen, Yu-Sheng, Chen, Pang-Shiu, Gu, Peggy, Chen, Chi-Wei, Hsu, Yen-Ya, Liu, Wen-Hsing, Chen, Wei-Su, Tsai, Ming-Jinn, Lo, Shen-Chuan, Lai, Ming-Wei
Published in Current applied physics (01.01.2010)
Published in Current applied physics (01.01.2010)
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Journal Article
Statistical analysis of retention behavior and lifetime prediction of HfOBxB-based RRAM
Lijie Zhang, Ru Huang, Yen-Ya Hsu, Chen, F T, Heng-Yuan Lee, Yu-Sheng Chen, Wei-Su Chen, Pei-Yi Gu, Wen-Hsing Liu, Shun-Min Wang, Chen-Han Tsai, Ming-Jinn Tsai, Pang-Shiu Chen
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Published in 2011 International Reliability Physics Symposium (01.04.2011)
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Conference Proceeding
Design optimization in write speed of multi-level cell application for phase change memory
Jun-Tin Lin, Yi-Bo Liao, Meng-Hsueh Chiang, I-Hsuan Chiu, Chia-Long Lin, Wei-Chou Hsu, Pei-Chia Chiang, Shyh-Shyuan Sheu, Yen-Ya Hsu, Wen-Hsing Liu, Keng-Li Su, Ming-Jer Kao, Ming-Jinn Tsai
Published in 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) (01.12.2009)
Published in 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) (01.12.2009)
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Conference Proceeding
Impact of resistance drift on multilevel PCM design
Yi-Hsuan Chiu, Yi-Bo Liao, Meng-Hsueh Chiang, Chia-Long Lin, Wei-Chou Hsu, Pei-Chia Chiang, Yen-Ya Hsu, Wen-Hsing Liu, Shyh-Shyuan Sheu, Keng-Li Su, Ming-Jer Kao, Ming-Jinn Tsai
Published in 2010 IEEE International Conference on Integrated Circuit Design and Technology (01.06.2010)
Published in 2010 IEEE International Conference on Integrated Circuit Design and Technology (01.06.2010)
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Conference Proceeding
Multi-level phase change memory using slow-quench operation: GST vs. GSST
Der-Sheng Chao, Chen, F.T., Yen-Ya Hsu, Wen-Hsing Liu, Chain-Ming Lee, Chih-Wei Chen, Wei-Su Chen, Ming-Jer Kao, Ming-Jinn Tsai
Published in 2009 International Symposium on VLSI Technology, Systems, and Applications (01.04.2009)
Published in 2009 International Symposium on VLSI Technology, Systems, and Applications (01.04.2009)
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Conference Proceeding
Scalability with silicon nitride encapsulation layer for Ti/HfOx pillar RRAM
Pei-Yi Gu, Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen, Wen-Hsing Liu, Wei-Su Chen, Yen-Ya Hsu, Chen, Frederick, Ming-Jinn Tsai
Published in Proceedings of 2010 International Symposium on VLSI Technology, System and Application (01.04.2010)
Published in Proceedings of 2010 International Symposium on VLSI Technology, System and Application (01.04.2010)
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Conference Proceeding
Impact of compliance current overshoot on high resistance state, memory performance, and device yield of HfOx based resistive memory and its solution
Yu-Sheng Chen, Wen-Hsing Liu, Heng-Yuan Lee, Pang-Shiu Chen, Sum-Min Wang, Chen-Han Tsai, Yen-Ya Hsu, Pei-Yi Gu, Wei-Su Chen, Chen, Frederick, Chen-Hsin Lien, Ming-Jinn Tsai
Published in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications (01.04.2011)
Published in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications (01.04.2011)
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Conference Proceeding
Robust High-Resistance State and Improved Endurance of [Formula Omitted] Resistive Memory by Suppression of Current Overshoot
Chen, Yu-Sheng, Lee, Heng-Yuan, Chen, Pang-Shiu, Liu, Wen-Hsing, Wang, Sum-Min, Gu, Pei-Yi, Hsu, Yen-Ya, Tsai, Chen-Han, Chen, Wei-Su, Chen, Frederick, Tsai, Ming-Jinn, Lien, Chenhsin
Published in IEEE electron device letters (01.11.2011)
Published in IEEE electron device letters (01.11.2011)
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Journal Article