Search Results - "Wen, Yichen" :: K.UTB vyhledávací portál

Effect of BN content on the structural, mechanical, and dielectric properties of PDCs‐SiCN(BN) composite ceramics

by Yan, Yuangao, Fei, Xuan, Huang, Liuying, Yu, Yuxi, Wen, Yichen, Zhao, Gang
Published in Journal of the American Ceramic Society (01.11.2023)

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Study on the Performance of In-Line Closed-Loop Polarization Maintaining Fiber Temperature Sensor

by Zhao, Jun, Yan, Min, Luo, Xi, Gan, Zhan, Cao, Hong, Chang, Jiarui, Wen, Yichen, Sun, Xiaohan
Published in IEEE transactions on instrumentation and measurement (2023)

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Step-recovery with Multi-pulse Test (SRMPT) Characterization Technique for the Understanding of Border Traps in Ferroelectric Capacitors

by Wu, Yishan, Liu, Zhiwei, Wu, Maokun, Cai, Puyang, Wang, Xuepei, Liu, Jinhao, Cui, Boyao, Wu, Junjie, Wen, Yichen, Wang, Runsheng, Ye, Sheng, Ren, Pengpeng, Ji, Zhigang, Huang, Ru
Published in IEEE electron device letters (05.08.2024)

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Understanding the Effect of Top Electrode on Ferroelectricity in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films

by Wang, Xuepei, Wen, Yichen, Wu, Maokun, Cui, Boyao, Wu, Yi-Shan, Li, Yuchun, Li, Xiaoxi, Ye, Sheng, Ren, Pengpeng, Ji, Zhi-Gang, Lu, Hong-Liang, Wang, Runsheng, Zhang, David Wei, Huang, Ru
Published in ACS applied materials & interfaces (29.03.2023)

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Ranking Recipes According to Classicality towards Understanding Evolution of Food Preference

by Yichen Wen, Asano, Yasuhito, Yoshikawa, Masatoshi
Published in 2015 International Conference on Culture and Computing (Culture Computing) (01.10.2015)

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Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) Under Sub-20-nm DRAM Node-Part II: PBTI Aging and Optimization

by Liu, Yong, Wang, Da, Ren, Pengpeng, Li, Jie, Qiao, Zheng, Wu, Maokun, Wen, Yichen, Zhou, Longda, Sun, Zixuan, Wang, Zirui, Han, Qinghua, Wu, Blacksmith, Cao, Kanyu, Wang, Runsheng, Ji, Zhigang, Huang, Ru
Published in IEEE transactions on electron devices (01.08.2024)

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Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) Under Sub-20-nm DRAM Node-Part I: Defect-Based Statistical Compact Model

by Liu, Yong, Wang, Da, Ren, Pengpeng, Li, Jie, Qiao, Zheng, Wu, Maokun, Wen, Yichen, Zhou, Longda, Sun, Zixuan, Wang, Zirui, Han, Qinghua, Wu, Blacksmith, Cao, Kanyu, Wang, Runsheng, Ji, Zhigang, Huang, Ru
Published in IEEE transactions on electron devices (01.08.2024)

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Toward Reliability- and Variability-Aware Design-Technology Co-Optimization in Advanced Nodes: Defect Characterization, Industry-Friendly Modeling, and ML-Assisted Prediction

by Ji, Zhigang, Xue, Yongkang, Ren, Pengpeng, Ye, Jinfeng, Li, Yu, Wu, Yishan, Wang, Da, Wang, Shuying, Wu, Junjie, Wang, Zirui, Wen, Yichen, Xia, Shiyu, Zhang, Lining, Zhang, Jianfu, Liu, Junhua, Luo, Junwei, Deng, Huixiong, Wang, Runsheng, Yang, Lianfeng, Huang, Ru
Published in IEEE transactions on electron devices (01.01.2024)

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On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects

by Xue, Yongkang, Ren, Pengpeng, Wu, Junjie, Liu, Zhuyou, Wang, Shuying, Li, Yu, Wang, Zirui, Sun, Zixuan, Wang, Da, Wen, Yichen, Xia, Shiyu, Zhang, Lining, Zhang, Jianfu, Ji, Zhigang, Luo, Junwei, Deng, Huixiong, Wang, Runsheng, Yang, Lianfeng, Huang, Ru
Published in IEEE transactions on electron devices (01.09.2023)

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Oxygen Vacancy Modulation With TiO₂ Stack Interface Engineering for Ferroelectric Hf0.5Zr0.5O₂ Thin Films

by Wang, Xuepei, Wu, Maokun, Cui, Boyao, Li, Yuchun, Wu, Yishan, Wen, Yichen, Liu, Jinhao, Li, Xiaoxi, Ye, Sheng, Ren, Pengpeng, Ji, Zhigang, Lu, Hongliang, Zhang, David Wei, Wang, Runsheng, Huang, Ru
Published in IEEE electron device letters (01.01.2024)

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Oxygen Vacancy Modulation With TiO₂ Stack Interface Engineering for Ferroelectric Hf 0.5 Zr 0.5 O₂ Thin Films

by Wang, Xuepei, Wu, Maokun, Cui, Boyao, Li, Yuchun, Wu, Yishan, Wen, Yichen, Liu, Jinhao, Li, Xiaoxi, Ye, Sheng, Ren, Pengpeng, Ji, Zhigang, Lu, Hongliang, Zhang, David Wei, Wang, Runsheng, Huang, Ru
Published in IEEE electron device letters (01.01.2024)

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Understanding the Effect of Top Electrode on Ferroelectricity in Atomic Layer Deposited Hf 0.5 Zr 0.5 O 2 Thin Films

by Wang, Xuepei, Wen, Yichen, Wu, Maokun, Cui, Boyao, Wu, Yi-Shan, Li, Yuchun, Li, Xiaoxi, Ye, Sheng, Ren, Pengpeng, Ji, Zhi-Gang, Lu, Hong-Liang, Wang, Runsheng, Zhang, David Wei, Huang, Ru
Published in ACS applied materials & interfaces (29.03.2023)

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