Application of optical absorbance for the investigation of electronic and structural properties of sol-gel processed TiO2 films
WELTE, Andrea, WALDAUF, Christoph, BRABEC, Christoph, WELLMANN, Peter J
Published in Thin solid films (30.08.2008)
Published in Thin solid films (30.08.2008)
Get full text
Conference Proceeding
Journal Article
Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (100) seeding layers
Schuh, P., Schöler, M., Wilhelm, M., Syväjärvi, M., Litrico, G., La Via, F., Mauceri, M., Wellmann, P.J.
Published in Journal of crystal growth (15.11.2017)
Published in Journal of crystal growth (15.11.2017)
Get full text
Journal Article
3C-SiC bulk sublimation growth on CVD hetero-epitaxial seeding layers
Schuh, P., Litrico, G., La Via, F., Mauceri, M., Wellmann, P.J.
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Get full text
Conference Proceeding
Journal Article
Solar Driven Energy Conversion Applications Based on 3C-SiC
Jokubavicius, Valdas, Hensen, Emiel J.M., Gao, Lu, Booker, Ian, Jansson, Mattias, Ramiro, Iñigo, Yakimova, Rositza, Hofmann, Jan P., Liu, Xin Yu, Syväjärvi, Mikael, Sun, Jian Wu, Wellmann, Peter J., Linnarsson, Margareta K., Martí, Antonio
Published in Materials Science Forum (2016)
Published in Materials Science Forum (2016)
Get full text
Journal Article
Numerical modeling and experimental verification of modified-PVT crystal growth of SiC
Get full text
Journal Article
Conference Proceeding
Vapor growth of SiC bulk crystals and its challenge of doping
Wellmann, P.J., Müller, R., Queren, D., Sakwe, S.A., Pons, M.
Published in Surface & coatings technology (20.12.2006)
Published in Surface & coatings technology (20.12.2006)
Get full text
Journal Article
Conference Proceeding
Analysis on defect generation during the SiC bulk growth process
Hofmann, D., Schmitt, E., Bickermann, M., Kölbl, M., Wellmann, P.J., Winnacker, A.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
Get full text
Journal Article
Conference Proceeding
Diffraction experiments with high-energy X-rays during PVT growth of SiC
Hock, R.C., Konias, K., Stockmeier, M., Hens, P., Wellmann, P.J., Magerl, A.
Published in Acta crystallographica. Section A, Foundations of crystallography (23.08.2008)
Published in Acta crystallographica. Section A, Foundations of crystallography (23.08.2008)
Get full text
Journal Article
On the preparation of semi-insulating SiC bulk crystals by the PVT technique
Bickermann, M., Hofmann, D., Straubinger, T.L., Weingärtner, R., Wellmann, P.J., Winnacker, A.
Published in Applied surface science (12.12.2001)
Published in Applied surface science (12.12.2001)
Get full text
Journal Article
Conference Proceeding
Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC using absorption measurements
Wellmann, P.J., Bushevoy, S., Weingärtner, R.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.03.2001)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.03.2001)
Get full text
Journal Article
Conference Proceeding
Impact of source material on silicon carbide vapor transport growth process
Wellmann, P.J., Hofmann, D., Kadinski, L., Selder, M., Straubinger, T.L., Winnacker, A.
Published in Journal of crystal growth (01.05.2001)
Published in Journal of crystal growth (01.05.2001)
Get full text
Journal Article
Conference Proceeding
Optical quantitative determination of doping levels and their distribution in SiC
Wellmann, P.J., Weingärtner, R., Bickermann, M., Straubinger, T.L., Winnacker, A.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.04.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.04.2002)
Get full text
Journal Article
Conference Proceeding
Investigation of mass transport during PVT growth of SiC by 13C labeling of source material
Herro, Z.G., Wellmann, P.J., Püsche, R., Hundhausen, M., Ley, L., Maier, M., Masri, P., Winnacker, A.
Published in Journal of crystal growth (01.11.2003)
Published in Journal of crystal growth (01.11.2003)
Get full text
Journal Article
Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC
Weingärtner, R., Bickermann, M., Bushevoy, S., Hofmann, D., Rasp, M., Straubinger, T.L., Wellmann, P.J., Winnacker, A.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.03.2001)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.03.2001)
Get full text
Journal Article
Conference Proceeding