Characterization of the charge trapping properties in p-channel silicon-oxide-nitride-oxide-silicon memory devices including SiO2/Si3N4 interfacial transition layer
Chiu, Yung-Yueh, Yang, Bo-Jun, Li, Fu-Hai, Chang, Ru-Wei, Sun, Wein-Town, Lo, Chun-Yuan, Hsu, Chia-Jung, Kuo, Chao-Wei, Shirota, Riichiro
Published in Japanese Journal of Applied Physics (01.10.2015)
Published in Japanese Journal of Applied Physics (01.10.2015)
Get full text
Journal Article
Study Trapped Charge Distribution in P-Channel Silicon--Oxide--Nitride--Oxide--Silicon Memory Device Using Dynamic Programming Scheme
Li, Fu-Hai, Chiu, Yung-Yueh, Lee, Yen-Hui, Chang, Ru-Wei, Yang, Bo-Jun, Sun, Wein-Town, Lee, Eric, Kuo, Chao-Wei, Shirota, Riichiro
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
Get full text
Journal Article
Analysis of vertical location and bandgap energy distribution of trapped charges on P-type SONOS NeoFlash® after program/erase cycling
Chao-Wei Kuo, Chia-Jung Hsu, Chun-Yuan Lo, Jui-Min Kuo, Wei-Min Lee, Cheng-Yen Shen, Wein-Town Sun
Published in 2013 5th IEEE International Memory Workshop (01.05.2013)
Published in 2013 5th IEEE International Memory Workshop (01.05.2013)
Get full text
Conference Proceeding
Improving gate oxide integrity of cobalt silicided P-type polysilicon gate using arsenic implantation
SUN, W.-T, LIAW, W.-W, LIAW, M.-C, HSIEH, K.-C, HSU, C. C.-H
Published in Japanese Journal of Applied Physics (01.02.1997)
Published in Japanese Journal of Applied Physics (01.02.1997)
Get full text
Journal Article
A Dynamic Programming Method with Programming Current Clamped in Embedded P-Channel SONOS Flash Memory
Shang-Wei Fang, Ying-Je Chen, Cheng-Jye Liu, Zheng-Jie Lee, Zhi-Bin Kuo, Hong-Yi Liao, Yu-Shiung Tsai, Wein-Town Sun, Yuan-Tai Lin
Published in 2012 4th IEEE International Memory Workshop (01.05.2012)
Published in 2012 4th IEEE International Memory Workshop (01.05.2012)
Get full text
Conference Proceeding
A highly reliable embedded p-channel SONOS memory using dynamic programming method
Ying-Je Chen, Cheng-Jye Liu, Chun-Yuan Lo, Yun-Jen Ting, Hsu, T H, Wein-Town Sun
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Get full text
Conference Proceeding
Low-cost embedded Flash memory technology
Wein-Town Sun, Cheng-Jye Liu, Chun-Yuan Lo, Yun-Jen Ting, Ying-Je Chen, Tai-Yi Wu, Eng-Huat Toh, Xiao-Hong Yuan, Ko-Li Low, Qiu Han, Young-Seon You, Ying-Keung Leung, Swee-Tuck Woo
Published in 2011 IEEE International Conference on IC Design & Technology (01.05.2011)
Published in 2011 IEEE International Conference on IC Design & Technology (01.05.2011)
Get full text
Conference Proceeding
Antimony co-implantation to suppress boron-penetration in P+-poly gate metal-oxide-semiconductor transistors
SUN, W.-T, YANG, C.-S, LIAW, M.-C, HSU, C. C.-H
Published in Japanese Journal of Applied Physics (15.03.1996)
Published in Japanese Journal of Applied Physics (15.03.1996)
Get full text
Journal Article
Characterization of the charge trapping properties in p-channel silicon-oxide-nitride-oxide-silicon memory devices including SiO sub(2)/Si sub(3) N sub(4) interfacial transition layer
Chiu, Yung-Yueh, Yang, Bo-Jun, Li, Fu-Hai, Chang, Ru-Wei, Sun, Wein-Town, Lo, Chun-Yuan, Hsu, Chia-Jung, Kuo, Chao-Wei, Shirota, Riichiro
Published in Japanese Journal of Applied Physics (01.10.2015)
Published in Japanese Journal of Applied Physics (01.10.2015)
Get full text
Journal Article
Characterization of the charge trapping properties in p-channel silicon–oxide–nitride–oxide–silicon memory devices including SiO 2 /Si 3 N 4 interfacial transition layer
Chiu, Yung-Yueh, Yang, Bo-Jun, Li, Fu-Hai, Chang, Ru-Wei, Sun, Wein-Town, Lo, Chun-Yuan, Hsu, Chia-Jung, Kuo, Chao-Wei, Shirota, Riichiro
Published in Japanese Journal of Applied Physics (01.10.2015)
Published in Japanese Journal of Applied Physics (01.10.2015)
Get full text
Journal Article