Factors Influencing the Leakage Current in Embedded SiGe Source/Drain Junctions
Simoen, E., Gonzalez, M.B., Vissouvanadin, B., Chowdhury, M.K., Verheyen, P., Hikavyy, A., Bender, H., Loo, R., Claeys, C., Machkaoutsan, V., Tomasini, P., Thomas, S., Lu, J.P., Weijtmans, J.W., Wise, R.
Published in IEEE transactions on electron devices (01.03.2008)
Published in IEEE transactions on electron devices (01.03.2008)
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Morphology of quaterthiophene thin films in organic field effect transistors
Schoonveld, W.A., Stok, R.W., Weijtmans, J.W., Vrijmoeth, J., Wildeman, J., Klapwijk, T.M.
Published in Synthetic metals (1997)
Published in Synthetic metals (1997)
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Conference Proceeding
A 5V complementary-SiGe BiCMOS technology for high-speed precision analog circuits
El-Kareh, Balster, Leitz, Steinmann, Yasuda, Corsi, Dawoodi, Dirnecker, Foglietti, Haeusler, Menz, Ramin, Scharnagl, Schiekofer, Schober, Schulz, Swanson, Tatman, Waitschull, Weijtmans, Willis
Published in 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440) (2003)
Published in 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440) (2003)
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Conference Proceeding
On implementation of embedded phosphorus-doped SiC stressors in SOI nMOSFETs
Zhibin Ren, Pei, G., Li, J., Yang, B.F., Takalkar, R., Chan, K., Xia, G., Zhu, Z., Madan, A., Pinto, T., Adam, T., Miller, J., Dube, A., Black, L., Weijtmans, J.W., Yang, B., Harley, E., Chakravarti, A., Kanarsky, T., Pal, R., Lauer, I., Park, D.-G., Sadana, D.
Published in 2008 Symposium on VLSI Technology (01.06.2008)
Published in 2008 Symposium on VLSI Technology (01.06.2008)
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Conference Proceeding
PMOSFET layout dependency with embedded SiGe Source/Drain at POLY and STI edge in 32/28nm CMOS technology
Song, L., Liang, Y., Onoda, H., Lai, C. W., Wallner, T. A., Pofelski, A., Gruensfelder, C., Josse, E., Okawa, T., Brown, J., Williams, R. Q., Holt, J., Weijtmans, J. W., Greene, B., Utomo, H. K., Lee, S. C., Nair, D., Zhang, Q., Zhu, C., Wu, X., Sherony, M., Lee, Y. M., Henson, W. K., Divakaruni, R., Kaste, E.
Published in Proceedings of Technical Program of 2012 VLSI Technology, System and Application (01.04.2012)
Published in Proceedings of Technical Program of 2012 VLSI Technology, System and Application (01.04.2012)
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Conference Proceeding
Recent Progress and Challenges in Enabling Embedded Si:C Technology
Yang, B F., Ren, Zhibin, Takalkar, Rohit, Black, Linda R., Dube, Abhishek, Weijtmans, J. W., Li, John, Chan, K, Souza, J P de, Madan, Anita, Xia, G., Zhu, Zhengmao, Faltermeier, J., Reznicek, A., Adam, Thomas N., Chakravarti, Ashima, Pei, G, Pal, Rohit, Yang, B, Harley, Eric C., Greene, B, Gehring, A, Cai, M, Sadana, D, Park, D, Mocuta, D, Schepis, Dominic J., Maciejewski, E, Luning, S, Leobandung, E
Published in ECS transactions (2009)
Published in ECS transactions (2009)
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Effect of Ion Implantation and Anneals on Fully-strained SiC and SiC:P Films using Multiple Characterization Techniques
Madan, Anita, Li, Jinghong, Ren, Zhibin, Yang, B F., Harley, Eric C., Adam, Thomas N., Loesing, Rainer, Zhu, Zhengmao, Pinto, Teresa, Chakravarti, Ashima, Dube, Abhishek, Takalkar, Rohit, Weijtmans, J. W., Black, Linda R., Schepis, Dominic J.
Published in ECS transactions (2009)
Published in ECS transactions (2009)
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Journal Article
Selective Epitaxy of Si/SiGe to Improve pMOS Devices by Recessed Source/Drain and/or Buried SiGe Channels
Loo, Roger, Verheyen, Peter, Rooyackers, Rita, Walczyk, Christian, Leys, Frederik, Shamiryan, Denis, Absil, Philip, Delande, Tinne, Moussa, Alain, Weijtmans, Hans, Wise, Rick, Machkaoutsan, Vladimir, Arena, Chantal, McCormack, John, Passefort, Sophie, Sorada, Haruyuki, Inoue, Akira, Lee, Byeong Chan, Hyun, Sangjin, Jakschik, Stefan, Caymax, Matty R., Eneman, Geert, Bender, Hugo, Drijbooms, Chris, Geenen, Luc, Tomasini, Pierre, Godny, Stephane
Published in ECS transactions (20.10.2006)
Published in ECS transactions (20.10.2006)
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Probing Nanoscale Local Lattice Strains in Advanced Si CMOS Devices by CBED: A Tutorial with Recent Results
Kim, Moon, Huang, Jiang, Chidambaram, P.R., Irwin, Richard, Jones, Patrick, Weijtmans, J.W., Koontz, Elisabeth Marley, Wang, Yuguo, Tang, Shaoping, Wise, Rick
Published in ECS transactions (28.04.2006)
Published in ECS transactions (28.04.2006)
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Journal Article
High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
Yang, B. Frank, Takalkar, R., Ren, Z., Black, L., Dube, A., Weijtmans, J.W., Li, J., Johnson, J.B., Faltermeier, J., Madan, A., Zhu, Z., Turansky, A., Xia, G., Chakravarti, A., Pal, R., Chan, K., Reznicek, A., Adam, T.N., Yang, B., de Souza, J.P., Harley, E.C.T., Greene, B., Gehring, A., Cai, M., Aime, D., Sun, S., Meer, H., Holt, J., Theodore, D., Zollner, S., Grudowski, P., Sadana, D., Park, D.-G., Mocuta, D., Schepis, D., Maciejewski, E., Luning, S., Pellerin, J., Leobandung, E.
Published in 2008 IEEE International Electron Devices Meeting (01.12.2008)
Published in 2008 IEEE International Electron Devices Meeting (01.12.2008)
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Conference Proceeding
Effect of Ion Implantation and Anneals on Fully-strained SiC and SiC:P Films using Multiple Characterization Techniques
Madan, Anita, Li, Jinghong, Ren, Zhibin, Yang, B F., Harley, Eric C., Adam, Thomas N., Loesing, Rainer, Zhu, Zhengmao, Pinto, Teresa, Chakravarti, Ashima, Black, Linda R., Schepis, Dominic J., Takalkar, Rohit, Dube, Abhishek, Weijtmans, J. W.
Published in Meeting abstracts (Electrochemical Society) (29.08.2008)
Published in Meeting abstracts (Electrochemical Society) (29.08.2008)
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Journal Article
Recent Progress and Challenges in Enabling Embedded Si:C Technology
Yang, B F., Ren, Zhibin, Takalkar, Rohit, Li, John, Black, Linda R., Dube, Abhishek, Weijtmans, J. W., Chakravarti, Ashima, Pei, G, Pal, Rohit, Xia, G., Chan, K, Zhu, Zhengmao, Madan, Anita, Adam, Thomas N., Yang, B, Souza, J P de, Harley, Eric C., Greene, B, Gehring, A, Cai, M, Sadana, D, Park, D, Mocuta, D, Schepis, Dominic J., Maciejewski, E, Luning, S, Leobandung, E
Published in Meeting abstracts (Electrochemical Society) (29.08.2008)
Published in Meeting abstracts (Electrochemical Society) (29.08.2008)
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