All‐van‐der‐Waals Barrier‐Free Contacts for High‐Mobility Transistors
Zhang, Xiankun, Yu, Huihui, Tang, Wenhui, Wei, Xiaofu, Gao, Li, Hong, Mengyu, Liao, Qingliang, Kang, Zhuo, Zhang, Zheng, Zhang, Yue
Published in Advanced materials (Weinheim) (01.08.2022)
Published in Advanced materials (Weinheim) (01.08.2022)
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Gradient‐Strained Van Der Waals Heterojunctions for High‐Efficient Photodetectors
Zeng, Haoran, Yu, Huihui, Liu, Baishan, Lu, Shucao, Wei, Xiaofu, Gao, Li, Hong, Mengyu, Zhang, Xiankun, Zhang, Zheng, Zhang, Yue
Published in Advanced functional materials (01.07.2024)
Published in Advanced functional materials (01.07.2024)
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Journal Article
All‐van‐der‐Waals Barrier‐Free Contacts for High‐Mobility Transistors
Zhang, Xiankun, Yu, Huihui, Tang, Wenhui, Wei, Xiaofu, Gao, Li, Hong, Mengyu, Liao, Qingliang, Kang, Zhuo, Zhang, Zheng, Zhang, Yue
Published in Advanced materials (Weinheim) (01.08.2022)
Published in Advanced materials (Weinheim) (01.08.2022)
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An Ultrahigh‐Rectification‐Ratio WSe2 Homojunction Defined by High‐Efficiency Charge Trapping Effect
Wang, Lihua, He, Xiaoyu, Zhang, Xiankun, Wei, Xiaofu, Chen, Kuanglei, Gao, Li, Yu, Huihui, Hong, Mengyu, Zhang, Zheng, Zhang, Yue
Published in Advanced electronic materials (01.02.2024)
Published in Advanced electronic materials (01.02.2024)
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Two-dimensional transition metal dichalcogenides for post-silicon electronics
Zhang, Xiankun, Zhao, Hang, Wei, Xiaofu, Zhang, Yanzhe, Zhang, Zheng, Zhang, Yue
Published in National Science Open (01.06.2023)
Published in National Science Open (01.06.2023)
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Universal transfer of full‐class metal electrodes for barrier‐free two‐dimensional semiconductor contacts
Hong, Mengyu, Zhang, Xiankun, Geng, Yu, Wang, Yunan, Wei, Xiaofu, Gao, Li, Yu, Huihui, Cao, Zhihong, Zhang, Zheng, Zhang, Yue
Published in InfoMat (01.01.2024)
Published in InfoMat (01.01.2024)
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Single-Atom Vacancy Defect to Trigger High-Efficiency Hydrogen Evolution of MoS2
Wang, Xin, Zhang, Yuwei, Si, Haonan, Zhang, Qinghua, Wu, Jing, Gao, Li, Wei, Xiaofu, Sun, Yu, Liao, Qingliang, Zhang, Zheng, Ammarah, Kausar, Gu, Lin, Kang, Zhuo, Zhang, Yue
Published in Journal of the American Chemical Society (04.03.2020)
Published in Journal of the American Chemical Society (04.03.2020)
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A 2D Optoelectronic Logic Device with Ultralow Supply Voltage
Huang, Mengting, Yu, Huihui, Wei, Xiaofu, Li, Ruishan, Zhang, Zheng, Zhang, Xiankun, Zhang, Yue
Published in ACS applied materials & interfaces (18.09.2024)
Published in ACS applied materials & interfaces (18.09.2024)
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Journal Article
Deciphering Vacancy Defect Evolution of 2D MoS2 for Reliable Transistors
Gao, Li, Zhang, Xiankun, Yu, Huihui, Hong, Mengyu, Wei, Xiaofu, Chen, Zhangyi, Zhang, Qinghua, Liao, Qingliang, Zhang, Zheng, Zhang, Yue
Published in ACS applied materials & interfaces (16.08.2023)
Published in ACS applied materials & interfaces (16.08.2023)
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Journal Article
Deciphering Vacancy Defect Evolution of 2D MoS 2 for Reliable Transistors
Gao, Li, Zhang, Xiankun, Yu, Huihui, Hong, Mengyu, Wei, Xiaofu, Chen, Zhangyi, Zhang, Qinghua, Liao, Qingliang, Zhang, Zheng, Zhang, Yue
Published in ACS applied materials & interfaces (16.08.2023)
Published in ACS applied materials & interfaces (16.08.2023)
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High-Spike Barrier Photodiodes Based on 2D Te/WS 2 Heterostructures
Yu, Huihui, Wang, Yunan, Zeng, Haoran, Cao, Zhihong, Zhang, Qinghua, Gao, Li, Hong, Mengyu, Wei, Xiaofu, Zheng, Yue, Zhang, Zheng, Zhang, Xiankun, Zhang, Yue
Published in ACS nano (02.07.2024)
Published in ACS nano (02.07.2024)
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Immunomodulatory Nanoparticles for Modulating Arthritis Flares
Johnson, Wade T., McBride, David, Kerr, Matthew, Nguyen, Anders, Zoccheddu, Martina, Bollmann, Miriam, Wei, Xiaofu, Jones, Ryan M., Wang, Wei, Svensson, Mattias N. D., Bottini, Nunzio, Shah, Nisarg J.
Published in ACS nano (23.01.2024)
Published in ACS nano (23.01.2024)
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A van der Waals Ferroelectric Tunnel Junction for Ultrahigh-Temperature Operation Memory
Tang, Wenhui, Zhang, Xiankun, Yu, Huihui, Gao, Li, Zhang, Qinghua, Wei, Xiaofu, Hong, Mengyu, Gu, Lin, Liao, Qingliang, Kang, Zhuo, Zhang, Zheng, Zhang, Yue
Published in Small methods (01.04.2022)
Published in Small methods (01.04.2022)
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Journal Article
Single-Atom Vacancy Defect to Trigger High-Efficiency Hydrogen Evolution of MoS 2
Wang, Xin, Zhang, Yuwei, Si, Haonan, Zhang, Qinghua, Wu, Jing, Gao, Li, Wei, Xiaofu, Sun, Yu, Liao, Qingliang, Zhang, Zheng, Ammarah, Kausar, Gu, Lin, Kang, Zhuo, Zhang, Yue
Published in Journal of the American Chemical Society (04.03.2020)
Published in Journal of the American Chemical Society (04.03.2020)
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Journal Article
An Ultrahigh‐Rectification‐Ratio WSe 2 Homojunction Defined by High‐Efficiency Charge Trapping Effect
Wang, Lihua, He, Xiaoyu, Zhang, Xiankun, Wei, Xiaofu, Chen, Kuanglei, Gao, Li, Yu, Huihui, Hong, Mengyu, Zhang, Zheng, Zhang, Yue
Published in Advanced electronic materials (01.02.2024)
Published in Advanced electronic materials (01.02.2024)
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Hong, Mengyu, Zhang, Xiankun, Geng, Yu, Wang, Yunan, Wei, Xiaofu, Gao, Li, Yu, Huihui, Cao, Zhihong, Zhang, Zheng, Zhang, Yue
Published in InfoMat (01.01.2024)
Published in InfoMat (01.01.2024)
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A RecMap-based new construction algorithm for demers cartogram
TAN, Zuofei, LI, Shenlin, HU, Yu, WANG, Zhaoxia, Xiaofu WEI
Published in Revue d'Intelligence Artificielle (01.01.2018)
Published in Revue d'Intelligence Artificielle (01.01.2018)
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Homojunction-loaded inverters based on self-biased molybdenum disulfide transistors for sub-picowatt computing
Zhang, Yue, Xiaofu Wei, Zhang, Xiankun, Yu, Huihui, Gao, Li, Tang, Wenhui, Hong, Mengyu, Chen, Zhangyi, Zhang, Zheng, Kang, Zhuo
Published in Nature Electronics (30.05.2024)
Published in Nature Electronics (30.05.2024)
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