An endurance-free ferroelectric random access memory as a non-volatile RAM
Jung, D.J., Ahn, W.S., Hong, Y.K., Kim, H.H., Kang, Y.M., Kang, J.Y., Lee, E.S., Ko, H.K., Kim, S.Y., Jung, W.W., Kim, J.H., Kang, S.K., Jung, J.Y., Kim, H.S., Choi, D.Y., Lee, S.Y., Wei, K.H.A., Wei, C., Jeong, H.S.
Published in 2008 Symposium on VLSI Technology (01.06.2008)
Published in 2008 Symposium on VLSI Technology (01.06.2008)
Get full text
Conference Proceeding