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"Wei, Andy C"
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"Wei, Andy C"
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Cap layer for spacer-constrained epitaxially grown material on fins of a FinFET device
by
Bouche Guillaume
,
Wei Andy C
Year of Publication
20.02.2018
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Methods of forming fins for FinFET semiconductor devices and the selective removal of such fins
by
Xie Ruilong
,
Wei Andy C
Year of Publication
11.07.2017
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CAP LAYER FOR SPACER-CONSTRAINED EPITAXIALLY GROWN MATERIAL ON FINS OF A FINFET DEVICE
by
Bouche Guillaume
,
Wei Andy C
Year of Publication
15.09.2016
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CONSTRAINING EPITAXIAL GROWTH ON FINS OF A FINFET DEVICE
by
KORABLEV KONSTANTIN
,
WEI ANDY C
Year of Publication
24.12.2015
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METHODS OF FORMING FINS FOR FINFET SEMICONDUCTOR DEVICES AND THE SELECTIVE REMOVAL OF SUCH FINS
by
XIE RUILONG
,
WEI ANDY C
Year of Publication
01.10.2015
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SELF-ALIGNED VIA PROCESS FLOW
by
Bouche Guillaume
,
Wei Andy C
,
Raghunthathan Sudharshanan
Year of Publication
05.01.2017
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Self-aligned via process flow
by
Bouche Guillaume
,
Wei Andy C
,
Raghunthathan Sudharshanan
Year of Publication
22.11.2016
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SELF-ALIGNED VIA PROCESS FLOW
by
RAGHUNTHATHAN SUDHARSHANAN
,
BOUCHE GUILLAUME
,
WEI ANDY C
Year of Publication
19.05.2016
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Replacement metal gate diffusion break formation
by
BANNA SRINVASA
,
WEI ANDY C
Year of Publication
17.12.2013
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FINFET DEVICES WITH DIFFERENT FIN HEIGHTS IN THE CHANNEL AND SOURCE/DRAIN REGIONS
by
XIE RUILONG
,
CAI XIUYU
,
WEI ANDY C
Year of Publication
01.10.2015
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Methods of forming replacement gate structures for semiconductor devices and the resulting semiconductor products
by
XIE RUILONG
,
CAI XIUYU
,
WEI ANDY C
Year of Publication
25.08.2015
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Methods of forming contacts to source/drain regions of FinFET devices
by
KOH SHAO MING
,
WEI ANDY C
Year of Publication
25.08.2015
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METHODS OF FORMING REPLACEMENT GATE STRUCTURES FOR SEMICONDUCTOR DEVICES AND THE RESULTING SEMICONDUCTOR PRODUCTS
by
XIE RUILONG
,
CAI XIUYU
,
WEI ANDY C
Year of Publication
18.06.2015
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Methods of forming finfet devices with a shared gate structure
by
YANG DAE GEUN
,
WEI ANDY C
Year of Publication
20.01.2015
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Methods of forming alignment marks and overlay marks on integrated circuit products employing FinFET devices and the resulting alignment/overlay mark
by
Tambwe Francis M
,
Kim Jeong Soo
,
Wei Andy C
Year of Publication
06.12.2016
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Methods of forming nanowire devices with doped extension regions and the resulting devices
by
Bouche Guillaume
,
Wan Jing
,
Wei Andy C
,
Koh Shao-Ming
Year of Publication
08.11.2016
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METHODS OF FORMING CONTACTS TO SOURCE/DRAIN REGIONS OF FINFET DEVICES BY FORMING A REGION THAT INCLUDES A SCHOTTKY BARRIER LOWERING MATERIAL
by
KOH SHAO MING
,
WEI ANDY C
Year of Publication
18.09.2014
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METHODS OF FORMING CONTACTS TO SOURCE/DRAIN REGIONS OF FINFET DEVICES
by
KOH SHAO MING
,
WEI ANDY C
Year of Publication
18.09.2014
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METHODS OF FORMING FINFET DEVICES WITH A SHARED GATE STRUCTURE
by
YANG DAE GEUN
,
WEI ANDY C
Year of Publication
18.09.2014
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Methods of forming nanowire devices with spacers and the resulting devices
by
Bouche Guillaume
,
Wan Jing
,
Wei Andy C
,
Koh Shao-Ming
Year of Publication
30.08.2016
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