Electroluminescence Spectra of a Gate Switched MOSFET at Cryogenic and Room Temperatures Agree with Ab Initio Calculations of 4H-SiC/SiO2-Interface Defects
Pobegen, Gregor, Weger, Magdalena, Cottom, Jonathon, Feil, Maximilian Wolfgang, Biermeier, Dominik, Bockstedte, Michel
Published in Materials science forum (05.06.2023)
Published in Materials science forum (05.06.2023)
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Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs
Feil, Maximilian W, Weger, Magdalena, Reisinger, Hans, Aichinger, Thomas, Kabakow, André, Waldhör, Dominic, Jakowetz, Andreas C, Prigann, Sven, Pobegen, Gregor, Gustin, Wolfgang, Waltl, Michael, Bockstedte, Michel, Grasser, Tibor
Published in arXiv.org (20.04.2024)
Published in arXiv.org (20.04.2024)
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