Current status and future trends of SiGe BiCMOS technology
Harame, D.L., Ahlgren, D.C., Coolbaugh, D.D., Dunn, J.S., Freeman, G.G., Gillis, J.D., Groves, R.A., Hendersen, G.N., Johnson, R.A., Joseph, A.J., Subbanna, S., Victor, A.M., Watson, K.M., Webster, C.S., Zampardi, P.J.
Published in IEEE transactions on electron devices (01.11.2001)
Published in IEEE transactions on electron devices (01.11.2001)
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Journal Article
Process stability of deuterium-annealed MOSFET's
Clark, W.F., Ference, T.G., Hook, T.B., Watson, K.M., Mittl, S.W., Burnham, J.S.
Published in IEEE electron device letters (01.01.1999)
Published in IEEE electron device letters (01.01.1999)
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Journal Article
The combined effects of deuterium anneals and deuterated barrier-nitride processing on hot-electron degradation in MOSFET's
Ference, T.G., Burnham, J.S., Clark, W.F., Hook, T.B., Mittl, S.W., Watson, K.M., Liang-Kai Kevin Han
Published in IEEE transactions on electron devices (01.04.1999)
Published in IEEE transactions on electron devices (01.04.1999)
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Journal Article
Two cases of cutaneous umbilical endosalpingiosis
Perera, G.K., Watson, K.M., Salisbury, J., Du Vivier, A.W.P.
Published in British journal of dermatology (1951) (01.10.2004)
Published in British journal of dermatology (1951) (01.10.2004)
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Journal Article
Reliability of high-speed SiGe heterojunction bipolar transistors under very high forward current density
Jae-Sung Rieh, Watson, K.M., Guarin, F., Zhijian Yang, Ping-Chuan Wang, Joseph, A.J., Freeman, G., Subbanna, S.
Published in IEEE transactions on device and materials reliability (01.06.2003)
Published in IEEE transactions on device and materials reliability (01.06.2003)
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Magazine Article
High performance, low complexity vertical PNP BJT integrated in a 0.18/spl mu/m SiGe BiCMOS technology
Voegeli, B.T., Gray, P.B., Rainey, B.A., Strieker, A.D., Feilchenfeld, N.B., Watson, K.M., St Onge, S.A., Dunn, J.S., Schmidt, N.T., Newton, K.M., Rascoe, J.S.
Published in Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005 (2005)
Published in Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005 (2005)
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Conference Proceeding
Ionic Stress Technique with Individual Vt Measurements on a 144 K SRAM
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Conference Proceeding
Translational factors in eikonal approximation and their effect on channel couplings
Chen, J C Y, Ponce, V H, Watson, K M
Published in Journal of physics. B, Atomic and molecular physics (01.06.1973)
Published in Journal of physics. B, Atomic and molecular physics (01.06.1973)
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Journal Article