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Published in European journal of cancer (1990) (01.09.2015)
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Trends in EM susceptibility of IT equipment
Hoad, R., Carter, N.J., Herke, D., Watkins, S.P.
Published in IEEE transactions on electromagnetic compatibility (01.08.2004)
Published in IEEE transactions on electromagnetic compatibility (01.08.2004)
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Extraction of the average collector velocity in high-speed "Type-II" InP-GaAsSb-InP DHBTs
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Published in IEEE electron device letters (01.12.2004)
Published in IEEE electron device letters (01.12.2004)
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InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs
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Published in IEEE transactions on electron devices (01.11.2001)
Published in IEEE transactions on electron devices (01.11.2001)
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Heavily carbon-doped GaAsSb grown on InP for HBT applications
Watkins, S.P., Pitts, O.J., Dale, C., Xu, X.G., Dvorak, M.W., Matine, N., Bolognesi, C.R.
Published in Journal of crystal growth (01.12.2000)
Published in Journal of crystal growth (01.12.2000)
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RDS characterization of GaAsSb and GaSb grown by MOVPE
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659P Rucaparib population pharmacokinetics (PPK) and exposure-response (ER) analyses in patients (pts) with metastatic castration-resistant prostate cancer (mCRPC) in TRITON2
Chowdhury, S., Patnaik, A., Campbell, D., Shapiro, J., Bryce, A.H., McDermott, R., Sautois, B., Vogelzang, N.J., Bambury, R., Voog, E., Zhang, J., Green, M., Beltman, J., Despain, D., Simmons, A.D., Watkins, S.P., Golsorkhi, A., Xiao, J., Abida, W.
Published in Annals of oncology (01.09.2020)
Published in Annals of oncology (01.09.2020)
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High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals
Kumar, E. Senthil, Mohammadbeigi, F., Boatner, L.A., Watkins, S.P.
Published in Journal of luminescence (01.08.2016)
Published in Journal of luminescence (01.08.2016)
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Genomic profiling of circulating tumour DNA (ctDNA) and tumour tissue for the evaluation of rucaparib in metastatic castration-resistant prostate cancer (mCRPC)
Chowdhury, S., McDermott, R., Piulats, J.M., Shapiro, J.D., Mejlholm, I., Morris, D., Ostler, P., Hussain, A., Dumbadze, I., Goldfischer, E.R., Pintus, E., Benjelloun, A., Gross, M.E., Tejwani, S., Chatta, G., Font, A., Loehr, A., Simmons, A.D., Watkins, S.P., Abida, W.
Published in Annals of oncology (01.10.2018)
Published in Annals of oncology (01.10.2018)
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Characterization of interfacial dopant layer for high-purity InP grown by MOCVD
Knight, D.G., Kelly, G., Hu, J., Watkins, S.P., Thewalt, M.L.W.
Published in Journal of crystal growth (01.12.1997)
Published in Journal of crystal growth (01.12.1997)
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300 GHz InP/GaAsSb/InP double HBTs with high current capability and BVCEO>6 V
Dvorak, M.W, Bolognesi, C.R, Pitts, O.J, Watkins, S.P
Published in IEEE electron device letters (01.08.2001)
Published in IEEE electron device letters (01.08.2001)
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Journal Article
15-nm base type-II InP/GaAsSb/InP DHBTs with F/sub T/=384 GHz and a 6-V BV/sub CEO
Liu, H.G., Watkins, S.P., Bolognesi, C.R.
Published in IEEE transactions on electron devices (01.03.2006)
Published in IEEE transactions on electron devices (01.03.2006)
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Journal Article
15-nm base type-II InP/GaAsSb/InP DHBTs with FT = 384 GHz and a 6-V BVCEO
LIU, H. G, WATKINS, S. P, BOLOGNESI, C. R
Published in IEEE transactions on electron devices (01.03.2006)
Published in IEEE transactions on electron devices (01.03.2006)
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Growth of InAsSb/InAs MQWs on GaSb for mid-IR photodetector applications
Lackner, D., Pitts, O.J., Najmi, S., Sandhu, P., Kavanagh, K.L., Yang, A., Steger, M., Thewalt, M.L.W., Wang, Y., McComb, D.W., Bolognesi, C.R., Watkins, S.P.
Published in Journal of crystal growth (01.07.2009)
Published in Journal of crystal growth (01.07.2009)
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Growth of InAsSb/InPSb heterojunctions for mid-IR detector applications
Pitts, O.J., Lackner, D., Cherng, Y.T., Watkins, S.P.
Published in Journal of crystal growth (15.11.2008)
Published in Journal of crystal growth (15.11.2008)
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Conference Proceeding