Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 mu m
Yellen, S.L., Shepard, A.H., Dalby, R.J., Baumann, J.A., Serreze, H.B., Guido, T.S., Soltz, R., Bystrom, K.J., Harding, C.M., Waters, R.G.
Published in IEEE journal of quantum electronics (01.06.1993)
Published in IEEE journal of quantum electronics (01.06.1993)
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Journal Article
Reliability of InAlGaAs strained-quantum-well lasers operating at 0.81 mu m
Yellen, S.L., Waters, R.G., Shephard, A.H., Baumann, J.A., Dalby, R.J.
Published in IEEE photonics technology letters (01.08.1992)
Published in IEEE photonics technology letters (01.08.1992)
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Journal Article
Operating characteristics of single-quantum-well AlGaAs/GaAs high-power lasers
Wagner, D.K., Waters, R.G., Tihanyi, P.L., Hill, D.S., Roza, A.J., Vollmer, H.J., Leopold, M.M.
Published in IEEE journal of quantum electronics (01.07.1988)
Published in IEEE journal of quantum electronics (01.07.1988)
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Journal Article
Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers
Waters, R.G., Bour, D.P., Yellen, S.L., Ruggieri, N.F.
Published in IEEE photonics technology letters (01.08.1990)
Published in IEEE photonics technology letters (01.08.1990)
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Journal Article
Dark-line-resistant, aluminum-free diode laser at 0.8 mu m
Yellen, S.L., Shepard, A.H., Harding, C.M., Baumann, J.A., Waters, R.G., Garbuzov, D.Z., Pjataev, V., Kochergin, V., Zory, P.S.
Published in IEEE photonics technology letters (01.12.1992)
Published in IEEE photonics technology letters (01.12.1992)
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Journal Article
Dark-line-resistant diode laser at 0.8 mu m comprising InAlGaAs strained quantum well
Waters, R.G., Dalby, R.J., Baumann, J.A., De Sanctis, J.L., Shepard, A.H.
Published in IEEE photonics technology letters (01.05.1991)
Published in IEEE photonics technology letters (01.05.1991)
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Journal Article
Carrier recombination rates in strained-layer InGaAs-GaAs quantum wells
Chen, Y.-C., Wang, P., Coleman, J.J., Bour, D.P., Lee, K.K., Waters, R.G.
Published in IEEE journal of quantum electronics (01.06.1991)
Published in IEEE journal of quantum electronics (01.06.1991)
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Journal Article
Reliability of GaAs-based semiconductor diode lasers: 0. 6-1. 1 [mu]m
Yellen, S.L., Shepard, A.H., Dalby, R.J., Baumann, J.A., Serreze, H.B., Guido, T.S., Soltz, R., Bystrom, K.J., Harding, C.M., Waters, R.G.
Published in IEEE journal of quantum electronics (01.06.1993)
Published in IEEE journal of quantum electronics (01.06.1993)
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Journal Article
Validation of a teaching clarity scale
Waters R.G, Scanlon D.C
Published in The Journal of the American Association of Teacher Educators in Agriculture (1988)
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Published in The Journal of the American Association of Teacher Educators in Agriculture (1988)
Journal Article
Enhanced Longevity Strained-layer Lasers
Waters, R.G.
Published in LEOS '90. Conference Proceedings IEEE Lasers and Electro-Optics Society 1990 Annual Meeting (1990)
Published in LEOS '90. Conference Proceedings IEEE Lasers and Electro-Optics Society 1990 Annual Meeting (1990)
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Conference Proceeding
Lateral-mode selectivity in external-cavity diode lasers with residual facet reflectivity
Sharfin, W.F., Mooradian, A., Harding, C.M., Waters, R.G.
Published in IEEE journal of quantum electronics (01.10.1990)
Published in IEEE journal of quantum electronics (01.10.1990)
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Journal Article