Shuttle Activation Annealing of Implanted Al in 4H-SiC
Watanabe, Tomokatsu, Hattori, Ryo, Imaizumi, Masayuki, Oomori, Tatsuo
Published in Japanese Journal of Applied Physics (01.04.2008)
Published in Japanese Journal of Applied Physics (01.04.2008)
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Journal Article
Comparative Study of Hall Effect Mobility in Inversion Layer of 4H-SiC MOSFETs With Nitrided and Phosphorus-Doped Gate Oxides
Noguchi, Munetaka, Watanabe, Tomokatsu, Watanabe, Hiroshi, Kita, Koji, Miura, Naruhisa
Published in IEEE transactions on electron devices (01.12.2021)
Published in IEEE transactions on electron devices (01.12.2021)
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Journal Article
Compatibility of POCl3 Gate Process with the Fabrication of Vertical 4H-SiC MOSFETs
Noguchi, Munetaka, Watanabe, Tomokatsu, Tomohisa, Shingo, Miura, Naruhisa
Published in Materials science forum (28.07.2020)
Published in Materials science forum (28.07.2020)
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Journal Article
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
KOYAMA Akihiro, KITANI Takeshi, WATANABE Tomokatsu, IWAMATSU Toshiaki
Year of Publication 18.07.2024
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Year of Publication 18.07.2024
Patent
SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD
FURUHASHI AKIYUKI, IMAIZUMI MASAYUKI, TANAKA TAKANORI, OKABE HIROAKI, WATANABE TOMOKATSU
Year of Publication 30.03.2015
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Year of Publication 30.03.2015
Patent
SEMICONDUCTOR DEVICE
IMAIZUMI, MASAYUKI, OKABE, HIROAKI, WATANABE, TOMOKATSU, FURUHASHI, MASAYUKI
Year of Publication 04.09.2014
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Year of Publication 04.09.2014
Patent
SILICON CARBIDE SEMICONDUCTOR DEVICE
FURUHASHI AKIYUKI, IMAIZUMI MASAYUKI, TANIOKA HISAKAZU, HINO SHIRO, KAGAWA YASUHIRO, WATANABE TOMOKATSU
Year of Publication 12.03.2015
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Year of Publication 12.03.2015
Patent
MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE
YOSHIDA SHOHEI, IMAIZUMI MASAYUKI, MIURA NARIHISA, TANIOKA HISAKAZU, TARUI YOICHIRO, AYA ATSUSHI, SAKAI KEIKO, NAKAO YUKIYASU, WATANABE TOMOKATSU
Year of Publication 08.01.2015
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Year of Publication 08.01.2015
Patent
SEMICONDUCTOR DEVICE
FURUKAWA AKIHIKO, WATANABE HIROSHI, EBIIKE YUJI, HINO SHIRO, MIURA NARUHISA, WATANABE TOMOKATSU, OHTSUKA KENICHI
Year of Publication 06.06.2013
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Year of Publication 06.06.2013
Patent
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
FURUKAWA AKIHIKO, TARUTANI MASAYOSHI, EBIIKE YUJI, IMAIZUMI MASAYUKI, HINO SHIRO, MIURA NARUHISA, AYA SUNAO, NAKAO YUKIYASU, WATANABE TOMOKATSU
Year of Publication 27.12.2012
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Year of Publication 27.12.2012
Patent
Mechanism of Depletion-Mode TDDB for 4H-SiC MOS Structure
Watanabe, Tomokatsu, Hino, Shiro, Iwamatsu, Toshiaki, Tomohisa, Shingo, Yamakawa, Satoshi
Published in IEEE transactions on device and materials reliability (01.03.2017)
Published in IEEE transactions on device and materials reliability (01.03.2017)
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Magazine Article
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
TANIOKA, TOSHIKAZU, IMAIZUMI, MASAYUKI, HINO, SHIRO, WATANABE, TOMOKATSU, FURUHASHI, MASAYUKI, MIURA, NARUHISA, NAKAO, YUKIYASU
Year of Publication 25.11.2010
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Year of Publication 25.11.2010
Patent