Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si
Lee, Ling, Fan, Wen-Chung, Ku, Jui-Tai, Chang, Wen-Hao, Chen, Wei-Kuo, Chou, Wu-Ching, Ko, Chih-Hsin, Wu, Cheng-Hsien, Lin, You-Ru, Wann, Clement H, Hsu, Chao-Wei, Chen, Yung-Feng, Su, Yan-Kuin
Published in Nanotechnology (19.11.2010)
Published in Nanotechnology (19.11.2010)
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Journal Article
Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence
Lee, Ling, Chien, Kun-Feng, Fan, Wen-Chung, Chou, Wu-Ching, Ko, Chih-Hsin, Wu, Cheng-Hsien, Lin, You-Ru, Wan, Cheng-Tien, Wann, Clement H, Hsu, Chao-Wei, Chen, Yung-Feng, Su, Yan-Kuin
Published in Japanese Journal of Applied Physics (01.06.2012)
Published in Japanese Journal of Applied Physics (01.06.2012)
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Journal Article
Improvement of defect reduction in semi-polar GaN grown on shallow-trenched Si(001) substrate
Lee, Ling, Chien, Kun-Feng, Chou, Wu-Ching, Ko, Chih-Hsin, Wu, Cheng-Hsien, Lin, You-Ru, Wan, Cheng-Tien, Wann, Clement H, Hsu, Chao-Wei, Chen, Yung-Feng, Su, Yan-Kuin
Published in CrystEngComm (01.01.2012)
Published in CrystEngComm (01.01.2012)
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Journal Article
Insulating Halos to Boost Planar NMOSFET Performance
Wen-Wei Hsu, Chao-Yun Lai, Chee Wee Liu, Chih-Hsin Ko, Ta-Ming Kuan, Tzu-Juei Wang, Wen-Chin Lee, Wann, Clement H
Published in IEEE transactions on electron devices (01.10.2010)
Published in IEEE transactions on electron devices (01.10.2010)
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Journal Article
A comparative study of advanced MOSFET concepts
Wann, C.H., Noda, K., Tanaka, T., Yoshida, M., Chenming Hu
Published in IEEE transactions on electron devices (01.10.1996)
Published in IEEE transactions on electron devices (01.10.1996)
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Journal Article
GaN epitaxial layers prepared on nano-patterned Si(001) substrate
Huang, C C, Chang, S J, Kuo, C H, Ko, C H, Wann, Clement H, Cheng, Y C, Lin, W J
Published in Journal of nanoscience and nanotechnology (01.02.2011)
Published in Journal of nanoscience and nanotechnology (01.02.2011)
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Journal Article
Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence
Lee, Ling, Chien, Kun-Feng, Fan, Wen-Chung, Chou, Wu-Ching, Ko, Chih-Hsin, Wu, Cheng-Hsien, Lin, You-Ru, Wan, Cheng-Tien, Wann, Clement H., Hsu, Chao-Wei, Chen, Yung-Feng, Su, Yan-Kuin
Published in Japanese Journal of Applied Physics (01.06.2012)
Published in Japanese Journal of Applied Physics (01.06.2012)
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Journal Article
N+-InGaAs/InAlAs recessed gates for InAs/AlSb HFET development
Wei-Zhi He, Heng-Kuang Lin, Pei-Chin Chiu, Jen-Inn Chyi, Chih-Hsin Ko, Ta-Ming Kuan, Meng-Kuei Hsieh, Wen-Chin Lee, Wann, Clement H
Published in 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) (01.05.2010)
Published in 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) (01.05.2010)
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Conference Proceeding
Ti- and Pt-based Schottky gates for InGaSb p-channel HFET development
Geng-Ying Liau, Heng-Kuang Lin, Pei-Chin Chiu, Han-Chieh Ho, Jen-Inn Chyi, Chih-Hsin Ko, Ta-Ming Kuan, Meng-Kuei Hsieh, Wen-Chin Lee, Wann, Clement H
Published in 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) (01.05.2010)
Published in 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) (01.05.2010)
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Conference Proceeding
High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications
Bin Liu, Xiao Gong, Ran Cheng, Pengfei Guo, Qian Zhou, Owen, Man Hon Samuel, Cheng Guo, Lanxiang Wang, Wei Wang, Yue Yang, Yee-Chia Yeo, Cheng-Tien Wan, Shu-Han Chen, Chao-Ching Cheng, You-Ru Lin, Cheng-Hsien Wu, Chih-Hsin Ko, Wann, Clement H.
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
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Conference Proceeding
Journal Article
Nanoscale CMOS
Wong, H.-S.P., Frank, D.J., Solomon, P.M., Wann, C.H.J., Welser, J.J.
Published in Proceedings of the IEEE (01.04.1999)
Published in Proceedings of the IEEE (01.04.1999)
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Journal Article
Single Crystalline GaN Epitaxial Layer Prepared on Nano-Patterned Si(001) Substrate
Huang, C. C., Chang, S. J., Kuo, C. H., Wu, C. H., Ko, C. H., Wann, Clement H., Cheng, Y. C., Lin, W. J.
Published in Journal of the Electrochemical Society (01.01.2011)
Published in Journal of the Electrochemical Society (01.01.2011)
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Journal Article
Ge Epitaxial Growth on GaAs Substrates for Application to Ge-Source/Drain GaAs MOSFETs
Luo, Guang-Li, Han, Zong-You, Chien, Chao-Hsin, Ko, Chih-Hsin, Wann, Clement H., Lin, Hau-Yu, Shen, Yi-Ling, Chung, Cheng-Ting, Huang, Shih-Chiang, Cheng, Chao-Ching, Chang, Chun-Yen
Published in Journal of the Electrochemical Society (2010)
Published in Journal of the Electrochemical Society (2010)
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Journal Article
The Annihilation of Threading Dislocations in the Germanium Epitaxially Grown within the Silicon Nanoscale Trenches
Luo, Guang-Li, Huang, Shih-Chiang, Ko, Chih-Hsin, Wann, Clement H., Chung, Cheng-Ting, Han, Zong-You, Cheng, Chao-Ching, Chang, Chun-Yen, Lin, Hau-Yu, Chien, Chao-Hsin
Published in Journal of the Electrochemical Society (2009)
Published in Journal of the Electrochemical Society (2009)
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Journal Article
Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's
Bin Yu, Wann, C.H.J., Nowak, E.D., Noda, K., Chenming Hu
Published in IEEE transactions on electron devices (01.04.1997)
Published in IEEE transactions on electron devices (01.04.1997)
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Journal Article
Experimental Demonstration of (111)-Oriented GaAs Metal-Oxide-Semiconductor Field-Effect-Transistors with Hetero-Epitaxial Ge Source/Drain
Han, Tsung-Yu, Luo, Guang-Li, Cheng, Chao-Ching, Ko, Chih-Hsin, Wann, Clement H., Kei, Chi-Chung, Hsiao, Chien-Nan, Chien, Chao-Hsin
Published in ECS journal of solid state science and technology (01.01.2014)
Published in ECS journal of solid state science and technology (01.01.2014)
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Journal Article
Nearly Dislocation-free Ge/Si Heterostructures by Using Nanoscale Epitaxial Growth Method
Luo, Guang-Li, Ko, Chih-Hsin, Wann, Clement H., Chung, Cheng-Ting, Han, Zong-You, Cheng, Chao-Ching, Chang, Chun-Yen, Lin, Hau-Yu, Chien, Chao-Hsin
Published in Physics procedia (2012)
Published in Physics procedia (2012)
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Ultimate contact resistance scaling enabled by an accurate contact resistivity extraction methodology for sub-20 nm node
Hong-Nien Lin, Wen-Wei Hsu, Wen-Chin Lee, Wann, C.H.
Published in 2009 Symposium on VLSI Technology (01.06.2009)
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Published in 2009 Symposium on VLSI Technology (01.06.2009)
Conference Proceeding
III-V MOSFETs with a new self-aligned contact
Zhang, Xingui, Guo, Huaxin, Ko, Chih-Hsin, Wann, Clement H., Cheng, Chao-Ching, Lin, Hau-Yu, Chin, Hock-Chun, Gong, Xiao, Lim, Phyllis Shi Ya, Luo, Guang-Li, Chang, Chun-Yen, Chien, Chao-Hsin, Han, Zong-You, Huang, Shih-Chiang, Yeo, Yee-Chia
Published in 2010 Symposium on VLSI Technology (01.06.2010)
Published in 2010 Symposium on VLSI Technology (01.06.2010)
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Conference Proceeding
MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages
Chen, Kai, Clement Wann, H., Dunster, Jon, Ko, Ping K., Hu, Chenming, Yoshida, Makoto
Published in Solid-state electronics (01.10.1996)
Published in Solid-state electronics (01.10.1996)
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