Impacts of Cu-Doping on the Performance of La-Based RRAM Devices
Wang, Yongte, Liu, Hongxia, Wang, Xing, Zhao, Lu
Published in Nanoscale research letters (09.07.2019)
Published in Nanoscale research letters (09.07.2019)
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Journal Article
Improved resistive switching characteristics of atomic layer deposited Al2O3/La2O3/Al2O3 multi-stacked films with Al+ implantation
Wang, Xing, Liu, Hongxia, Zhao, Lu, Wang, Yongte, Wang, Shulong
Published in Journal of materials science. Materials in electronics (01.07.2019)
Published in Journal of materials science. Materials in electronics (01.07.2019)
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Journal Article
Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition
Wang, Xing, Liu, Hongxia, Zhao, Lu, Fei, Chenxi, Feng, Xingyao, Chen, Shupeng, Wang, Yongte
Published in Nanoscale research letters (29.03.2017)
Published in Nanoscale research letters (29.03.2017)
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Journal Article
Structural Properties Characterized by the Film Thickness and Annealing Temperature for La 2 O 3 Films Grown by Atomic Layer Deposition
Wang, Xing, Liu, Hongxia, Zhao, Lu, Fei, Chenxi, Feng, Xingyao, Chen, Shupeng, Wang, Yongte
Published in Nanoscale research letters (01.12.2017)
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Published in Nanoscale research letters (01.12.2017)
Journal Article
Structural Properties Characterized by the Film Thickness and Annealing Temperature for La^sub 2^O3 Films Grown by Atomic Layer Deposition
Wang, Xing, Liu, Hongxia, Zhao, Lu, Fei, Chenxi, Feng, Xingyao, Chen, Shupeng, Wang, Yongte
Published in Nanoscale research letters (01.03.2017)
Published in Nanoscale research letters (01.03.2017)
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Journal Article
Enhanced Interfacial Characteristics of Atomic Layer Deposited LaAlO3 Thin Films
Liu, Hongxia, Wang, Xing, Wang, Yongte, Zhao, Lu, Wang, Shulong
Published in 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) (01.06.2019)
Published in 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) (01.06.2019)
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Conference Proceeding
Hafnium-based aluminate high-k metal gate structure based on Ge substrate and preparation method of structure
LIU HONGXIA, FENG XINGYAO, WANG YONGTE, ZHAO LU, FEI CHENXI, WANG XING
Year of Publication 31.05.2017
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Year of Publication 31.05.2017
Patent
La-base medium material high-K metal gate structure based on Ge substrate, and preparation method
LIU HONGXIA, FENG XINGYAO, WANG YONGTE, ZHAO LU, FEI CHENXI, WANG XING
Year of Publication 22.03.2017
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Year of Publication 22.03.2017
Patent
Hafnium-based aluminate high K metal gate structure based on Si substrate and preparation method of metal gate structure
LIU HONGXIA, FENG XINGYAO, WANG YONGTE, ZHAO LU, FEI CHENXI, WANG XING
Year of Publication 22.02.2017
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Year of Publication 22.02.2017
Patent