Nonvolatile resistive switching memory behavior of the TiOx-based memristor
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Published in Chemical physics (01.04.2024)
Published in Chemical physics (01.04.2024)
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Nonvolatile resistive switching memory behavior in WOx/BiFeOy heterojunction based memristor
Wang, Jiangqiu, Sun, Bai, Zhou, Guangdong, Zhu, Shouhui, Yang, Chuan, Ke, Chuan, Zhao, Yong, Wang, Hongyan
Published in Journal of alloys and compounds (05.04.2023)
Published in Journal of alloys and compounds (05.04.2023)
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Stable resistive switching behavior of polyvinyl alcohol coating film-based memristor under multiple operating voltages by doping AgNWs
Liang, Haotian, Ke, Chuan, Sun, Bai, Zhu, Shouhui, Wen, Qifan, Huang, Mao, Wang, Jiangqiu, Zhao, Yong
Published in Colloids and surfaces. A, Physicochemical and engineering aspects (20.10.2023)
Published in Colloids and surfaces. A, Physicochemical and engineering aspects (20.10.2023)
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Biomemristors-based synaptic devices for artificial intelligence applications
Wang, Jiangqiu, Mao, Shuangsuo, Zhu, Shouhui, Hou, Wentao, Yang, Feng, Sun, Bai
Published in Organic electronics (01.07.2022)
Published in Organic electronics (01.07.2022)
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Logic Gate Circuits Based on CeOx/WOy Memristor for the Odd/Even Checker and Encryption/Decryption of Image Applications
Wang, Jiangqiu, Wang, Hongyan, Cao, Zelin, Zhu, Shouhui, Du, Junmei, Yang, Chuan, Ke, Chuan, Zhao, Yong, Sun, Bai
Published in Advanced functional materials (10.05.2024)
Published in Advanced functional materials (10.05.2024)
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Journal Article
Logic Gate Circuits Based on CeO x /WO y Memristor for the Odd/Even Checker and Encryption/Decryption of Image Applications
Wang, Jiangqiu, Wang, Hongyan, Cao, Zelin, Zhu, Shouhui, Du, Junmei, Yang, Chuan, Ke, Chuan, Zhao, Yong, Sun, Bai
Published in Advanced functional materials (01.05.2024)
Published in Advanced functional materials (01.05.2024)
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Resistive switching characteristics of Ag2O/TiO2 bilayer film based memristor
Liang, Haotian, Ke, Chuan, Sun, Bai, Zhu, Shouhui, Wang, Jiangqiu, Yang, Chuan, Mao, Shuangsuo, Zhao, Yong
Published in Journal of molecular structure (05.09.2023)
Published in Journal of molecular structure (05.09.2023)
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NDR effect and negative-set/reset phenomenon in core-shell structure-based memristor under the effect of humidity
Liang, Haotian, Ke, Chuan, Sun, Bai, Zhu, Shouhui, Cao, Zelin, Du, Junmei, Wang, Jiangqiu, Yang, Chuan, Zhao, Yong
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.01.2024)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.01.2024)
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α-MnO2 nanorods-based memristors with nonvolatile resistive switching behavior
Mao, Shuangsuo, Sun, Bai, Yang, Yusheng, Wang, Jiangqiu, Zhao, Hongbin, Zhao, Yong
Published in Ceramics international (15.11.2022)
Published in Ceramics international (15.11.2022)
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Applications of biomemristors in next generation wearable electronics
Mao, Shuangsuo, Sun, Bai, Zhou, Guangdong, Guo, Tao, Wang, Jiangqiu, Zhao, Yong
Published in Nanoscale horizons (25.07.2022)
Published in Nanoscale horizons (25.07.2022)
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Return cabin with shock-absorbing and ground-contacting parachute-releasing structure
LIU YAN, LIU ZIXIANG, ZHU SONGXIAN, WANG JIANGQIU, ZENG TIXIAN, CHANG CHANG
Year of Publication 19.01.2021
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Year of Publication 19.01.2021
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Acquisition system for satellite analog signals
CHANG LIANG, LI CHUNPENG, CHEN HONGYU, JI YANCHAO, RONG JIANGANG, WANG JIANGQIU, WU ZHAILIAN, LI ZHAO, WU HUIYING, WANG JIANPING, CHEN YOUMEI, HUANG JIA, XU WENMING, CHEN ZUI, HUANG JING
Year of Publication 27.08.2021
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Year of Publication 27.08.2021
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Satellite high-accuracy independent exit-entry method
WU HUIYING, ZHOU MEIJIANG, CHEN HONGYU, WANG JIANGQIU, ZHU HAO, QI JINLING
Year of Publication 22.02.2017
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Year of Publication 22.02.2017
Patent