Search Results - "Wandel, K" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

An inductively coupled miniature plasma jet source at microwave frequencies

An inductively coupled miniature plasma jet source at microwave frequencies

by Porteanu, H E, Gesche, R, Wandel, K
Published in Plasma sources science & technology (01.06.2013)

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Journal Article

Low-temperature ICPECVD of silicon nitride in SiH4–NH3–Ar discharges analyzed by spectroscopic ellipsometry and etch behavior in KOH and BHF

Low-temperature ICPECVD of silicon nitride in SiH4–NH3–Ar discharges analyzed by spectroscopic ellipsometry and etch behavior in KOH and BHF

by Wolf, R, Wandel, K, Gruska, B
Published in Surface & coatings technology (01.07.2001)

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Journal Article

Mass spectrometry investigation of N2O dissociation and H2 and H2O production during SiO2 deposition in a remote reactor

Mass spectrometry investigation of N2O dissociation and H2 and H2O production during SiO2 deposition in a remote reactor

by WOLF, R, WANDEL, K
Published in Surface & coatings technology (01.09.1995)

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Conference Proceeding Journal Article

The influence of temperature and pressure on the structure of remote plasma enhanced chemically vapor deposited SiO2 investigated by spectroscopic ellipsometry

The influence of temperature and pressure on the structure of remote plasma enhanced chemically vapor deposited SiO2 investigated by spectroscopic ellipsometry

by GRUSKA, B, WANDEL, K
Published in Thin solid films (12.10.1993)

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Conference Proceeding Journal Article

Process and equipment simulation of dry silicon etching in the absence of ion bombardment

Process and equipment simulation of dry silicon etching in the absence of ion bombardment

by Otto, T., Wolf, H., Streiter, R., Dehoff, A., Wandel, K., Gessner, T.
Published in Microelectronic engineering (01.08.1999)

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Journal Article

Dependence of the electron diffusion length in p-InGaAs layers on the acceptor diffusion process

Dependence of the electron diffusion length in p-InGaAs layers on the acceptor diffusion process

by Ambree, P, Gruska, B, Wandel, K
Published in Semiconductor science and technology (01.06.1992)

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Journal Article

The influence of the storage time and the deposition of SiO2 on the properties of H2SO4 etched (In,Ga)As surface layers investigated by XPS and ellipsometry

The influence of the storage time and the deposition of SiO2 on the properties of H2SO4 etched (In,Ga)As surface layers investigated by XPS and ellipsometry

by Wandel, K, Procop, M, Richter, U, Wolf, R
Published in Semiconductor science and technology (01.07.1993)

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Journal Article

Photoelectron spectroscopic and ellipsometric investigation of In0.53Ga0.47As surfaces after wet chemical etching

Photoelectron spectroscopic and ellipsometric investigation of In0.53Ga0.47As surfaces after wet chemical etching

by Procop, M., Wandel, K.
Published in Fresenius' Journal of Analytical Chemistry (01.01.1993)

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Journal Article

Ex-situ XPS-investigation of the interface between PE-CVD SiO2 and wet chemically etched MO-CVD epitaxial layers of In0.53Ga0.47As

Ex-situ XPS-investigation of the interface between PE-CVD SiO2 and wet chemically etched MO-CVD epitaxial layers of In0.53Ga0.47As

by Procop, M., Wandel, K., Verucchi, R.
Published in Fresenius' Journal of Analytical Chemistry (01.01.1995)

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Journal Article

Global models for the microwave driven double icp plasma jet

Global models for the microwave driven double icp plasma jet

by Arshadi, A., Eremin, D., Mussenbrock, T., Brinkmann, R. P., Awakowicz, P., Porteanu, H., Gesche, R., Wandel, K.
Published in 2012 Abstracts IEEE International Conference on Plasma Science (01.07.2012)

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Conference Proceeding

Low-temperature ICPECVD of silicon nitride in SiH 4–NH 3–Ar discharges analyzed by spectroscopic ellipsometry and etch behavior in KOH and BHF

Low-temperature ICPECVD of silicon nitride in SiH 4–NH 3–Ar discharges analyzed by spectroscopic ellipsometry and etch behavior in KOH and BHF

by Wolf, R, Wandel, K, Gruska, B
Published in Surface & coatings technology (2001)

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Journal Article

Mass spectrometry investigation of N 2O dissociation and H 2 and H 2O production during SiO 2 deposition in a remote reactor

Mass spectrometry investigation of N 2O dissociation and H 2 and H 2O production during SiO 2 deposition in a remote reactor

by Wolf, R., Wandel, K.
Published in Surface & coatings technology (1995)

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Journal Article

Influence of temperature and pressure on the structure of remote plasma-enhanced chemically vapor deposited SiO sub 2 investigated by spectroscopic ellipsometry

Influence of temperature and pressure on the structure of remote plasma-enhanced chemically vapor deposited SiO sub 2 investigated by spectroscopic ellipsometry

by Gruska, B, Wandel, K
Published in Thin solid films (01.01.1993)

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Journal Article

The influence of temperature and pressure on the structure of remote plasma enhanced chemically vapor deposited SiO 2 investigated by spectroscopic ellipsometry

The influence of temperature and pressure on the structure of remote plasma enhanced chemically vapor deposited SiO 2 investigated by spectroscopic ellipsometry

by Gruska, B., Wandel, K.
Published in Thin solid films (1993)

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Journal Article

Electronic structure of the Ru(0001) surface

Electronic structure of the Ru(0001) surface

by Pelzer, T, Ceballos, G, Zbikowski, F, Willerding, B, Wandelt, K, Thomann, U, Reuß, Ch, Fauster, Th, Braun, J
Published in Journal of physics. Condensed matter (13.03.2000)

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Journal Article

Low-temperature ICPECVD of silicon nitride in SiH4-NH3-Ar discharges analyzed by spectroscopic ellipsometry and etch behavior in KOH and BHF

Low-temperature ICPECVD of silicon nitride in SiH4-NH3-Ar discharges analyzed by spectroscopic ellipsometry and etch behavior in KOH and BHF

by WOLF, R, WANDEL, K, GRUSKA, B
Published in Surface & coatings technology (2001)

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Conference Proceeding

Plasmaprozess-Technologie für mikromechanische Messobjekte (Plasma Process Technology for Micromechanic Measuring Structures)

Plasmaprozess-Technologie für mikromechanische Messobjekte (Plasma Process Technology for Micromechanic Measuring Structures)

by Dehoff, A., Reetz, M., Wandel, K., Wolf, R.
Published in Technisches Messen (01.02.2001)

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Journal Article

The influence of the storage time and the deposition of SiO 2 on the properties of H 2 SO 4 etched (In,Ga)As surface layers investigated by XPS and ellipsometry

The influence of the storage time and the deposition of SiO 2 on the properties of H 2 SO 4 etched (In,Ga)As surface layers investigated by XPS and ellipsometry

by Wandel, K, Procop, M, Richter, U, Wolf, R
Published in Semiconductor science and technology (01.07.1993)

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Journal Article

What did the consumers get out of the examination at a clinic of occupational medicine?

What did the consumers get out of the examination at a clinic of occupational medicine?

by Mortensen, J T, Wandel, K, Johansen, J P
Published in Ugeskrift for læger (07.06.1993)

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Journal Article

Modifications of serum protein in the rat following benzene poisoning and roentgen irradiation

Modifications of serum protein in the rat following benzene poisoning and roentgen irradiation

by EMMRICH, R, WANDEL, K
Published in Naunyn-Schmiedebergs Archiv fur experimentelle Pathologie und Pharmakologie (1950)

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Journal Article