A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs
Grasser, T., Feil, M., Waschneck, K., Reisinger, H., Berens, J., Waldhoer, D., Vasilev, A., Waltl, M., Aichinger, T., Bockstedte, M., Gustin, W., Pobegen, G.
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
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Conference Proceeding
Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects
Waldhoer, D., Wimmer, Y., El-Sayed, A. M., Goes, W., Waltl, M., Grasser, T.
Published in 2019 IEEE International Integrated Reliability Workshop (IIRW) (01.10.2019)
Published in 2019 IEEE International Integrated Reliability Workshop (IIRW) (01.10.2019)
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Conference Proceeding
Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS
Michl, J., Grill, A., Stampfer, B., Waldhoer, D., Schleich, C., Knobloch, T., Ioannidis, E., Enichlmair, H., Minixhofer, R., Kaczer, B., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M.
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
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Conference Proceeding
Modeling the Performance and Reliability of Two-Dimensional Semiconductor Transistors
Knobloch, T., Waldhoer, D., Davoudi, M. R., Karl, A., Khakbaz, P., Matzinger, M., Zhang, Y., Smithe, K. K. H., Nazir, A., Liu, C., Illarionov, Y. Y., Pop, E., Peng, H., Kaczer, B., Grasser, T.
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
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Conference Proceeding
Impact of Single Defects on NBTI and PBTI Recovery in SiO2 Transistors
Tselios, K., Knobloch, T., Michl, J., Waldhoer, D., Schleich, C., Ioannidis, E., Enichlmair, H., Minixhofer, R., Grasser, T., Waltl, M.
Published in 2022 IEEE International Integrated Reliability Workshop (IIRW) (09.10.2022)
Published in 2022 IEEE International Integrated Reliability Workshop (IIRW) (09.10.2022)
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Conference Proceeding
Variability in Si/SiGe and Si/SiO2 Spin Qubits due to Interfacial Disorder
Cvitkovich, L., Sklenard, B., Waldhor, D., Li, J., Wilhelmer, C., Veste, G., Niquet, Y.-M., Grasser, T.
Published in 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (27.09.2023)
Published in 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (27.09.2023)
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Conference Proceeding
Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface
Cvitkovich, L., Jech, M., Waldhor, D., El-Sayed, A.-M., Wilhelmer, C., Grasser, T.
Published in ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC) (13.09.2021)
Published in ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC) (13.09.2021)
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Conference Proceeding
Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO2Transistors
Tselios, K, Knobloch, T, Waldhoer, D, Stampfer, B, Ioannidis, E, Enichlmair, H, Minixhofer, R, Grasser, T, Waltl, M
Published in IEEE transactions on device and materials reliability (01.09.2023)
Published in IEEE transactions on device and materials reliability (01.09.2023)
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Magazine Article
Reliability Assessment of Double-Gated Wafer-Scale MoS2 Field Effect Transistors through Hysteresis and Bias Temperature Instability Analyses
Provias, A., Knobloch, T., Kitamura, A., O'Brien, K. P., Dorow, C. J., Waldhoer, D., Stampfer, B., Penumatcha, A. V., Lee, S., Ramamurthy, R., Clendenning, S., Waltl, M., Avci, U., Grasser, T.
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
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Conference Proceeding
Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking
Franco, J., de Marneffe, J.-F., Vandooren, A., Kimura, Y., Nyns, L., Wu, Z., El-Sayed, A.-M., Jech, M., Waldhoer, D., Claes, D., Arimura, H., Ragnarsson, L.-A, Afanas'ev, V., Stesmans, A., Horiguchi, N., Linten, D., Grasser, T., Kaczer, B.
Published in 2020 IEEE International Electron Devices Meeting (IEDM) (12.12.2020)
Published in 2020 IEEE International Electron Devices Meeting (IEDM) (12.12.2020)
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Conference Proceeding
Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO 2 Transistors
Tselios, K., Knobloch, T., Waldhoer, D., Stampfer, B., Ioannidis, E., Enichlmair, H., Minixhofer, R., Grasser, T., Waltl, M.
Published in IEEE transactions on device and materials reliability (01.09.2023)
Published in IEEE transactions on device and materials reliability (01.09.2023)
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Magazine Article
Revealing the Impact of Gate Area Scaling on Charge Trapping employing SiO2 Transistors
Tselios, K., Knobloch, T., Waldhoer, D., Stampfer, B., Ioannidis, E., Enichlmair, H., Minixhofer, R., Grasser, T., Waltl, M.
Published in IEEE transactions on device and materials reliability (24.03.2023)
Published in IEEE transactions on device and materials reliability (24.03.2023)
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Magazine Article