Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications
Walczyk, Ch, Wenger, Ch, Sohal, R., Lukosius, M., Fox, A., Dąbrowski, J., Wolansky, D., Tillack, B., Müssig, H.-J., Schroeder, T.
Published in Journal of applied physics (01.06.2009)
Published in Journal of applied physics (01.06.2009)
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Journal Article
Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material
Bertaud, T., Walczyk, D., Walczyk, Ch, Kubotsch, S., Sowinska, M., Schroeder, T., Wenger, Ch, Vallée, C., Gonon, P., Mannequin, C., Jousseaume, V., Grampeix, H.
Published in Thin solid films (01.05.2012)
Published in Thin solid films (01.05.2012)
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Journal Article
Conference Proceeding
High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics
Lukosius, M., Walczyk, Ch, Fraschke, M., Wolansky, D., Richter, H., Wenger, Ch
Published in Thin solid films (31.05.2010)
Published in Thin solid films (31.05.2010)
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Journal Article
Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells
WALCZYK, D, WALCZYK, Ch, SCHROEDER, T, BERTAUD, T, SOWINSKA, M, LUKOSIUS, M, FRASCHKE, M, TILLACK, B, WENGER, Ch
Published in Microelectronic engineering (01.07.2011)
Published in Microelectronic engineering (01.07.2011)
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Conference Proceeding
Journal Article
High performance metal-insulator-metal capacitors with atomic vapor deposited Hf02 dielectrics
LUKOSIUS, M, WALCZYK, Ch, FRASCHKE, M, WOLANSKY, D, RICHTER, H, WENGER, Ch
Published in Thin solid films (2010)
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Published in Thin solid films (2010)
Journal Article
High performance metal–insulator–metal capacitors with atomic vapor deposited HfO 2 dielectrics
Lukosius, M., Walczyk, Ch, Fraschke, M., Wolansky, D., Richter, H., Wenger, Ch
Published in Thin solid films (2010)
Published in Thin solid films (2010)
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Journal Article
(Invited) Resistive Switching and Current Status of HfO2-based RRAM
Walczyk, Christian, Sowinska, Malgorzata, Walczyk, Damian, Calka, Pauline, Schroeder, Thomas
Published in ECS transactions (01.01.2014)
Published in ECS transactions (01.01.2014)
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Journal Article
Dielectric properties of single crystalline PrO2(111)/Si(111) heterostructures: Amorphous interface and electrical instabilities
Seifarth, O., Walczyk, Ch, Lupina, G., Dabrowski, J., Zaumseil, P., Weidner, G., Müssig, H.-J., Schroeder, T.
Published in Journal of applied physics (15.11.2009)
Published in Journal of applied physics (15.11.2009)
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Journal Article
Dielectric properties of single crystalline PrO 2 ( 111 ) / Si ( 111 ) heterostructures: Amorphous interface and electrical instabilities
Seifarth, O., Walczyk, Ch, Lupina, G., Dabrowski, J., Zaumseil, P., Weidner, G., Müssig, H.-J., Schroeder, T.
Published in Journal of applied physics (17.11.2009)
Published in Journal of applied physics (17.11.2009)
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Journal Article
Resistive switching characteristics of CMOS embedded HfO sub(2-based 1T1R cells)
Walczyk, D, Walczyk, Ch, Schroeder, T, Bertaud, T, Sowinska, M, Lukosius, M, Fraschke, M, Tillack, B, Wenger, Ch
Published in Microelectronic engineering (01.07.2011)
Published in Microelectronic engineering (01.07.2011)
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Journal Article
(Invited) HfO2-Based RRAM for Embedded Nonvolatile Memory: From Materials Science to Integrated 1T1R RRAM Arrays
Bertaud, Thomas, Walczyk, Damian, Sowinska, Malgorzata, Wolansky, Dirk, Tillack, Bernd, Schoof, Gunter, Stikanov, Valery, Wenger, Christian, Thiess, Sebastian, Schroeder, Thomas, Walczyk, Christian
Published in ECS transactions (15.03.2013)
Published in ECS transactions (15.03.2013)
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Journal Article
Resistive switching of Ti/HfO 2 -based memory devices: impact of the atmosphere and the oxygen partial pressure
Bertaud, T, Sowinska, M, Walczyk, D, Walczyk, Ch, Kubotsch, S, Wenger, Ch, Schroeder, T
Published in IOP conference series. Materials Science and Engineering (06.12.2012)
Published in IOP conference series. Materials Science and Engineering (06.12.2012)
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Journal Article
Pulse-induced low-power resistive switching in Hf O 2 metal-insulator-metal diodes for nonvolatile memory applications
Walczyk, Ch, Wenger, Ch, Sohal, R., Lukosius, M., Fox, A., Dąbrowski, J., Wolansky, D., Tillack, B., Müssig, H.-J., Schroeder, T.
Published in Journal of applied physics (03.06.2009)
Published in Journal of applied physics (03.06.2009)
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Journal Article
Resistive switching of Ti/HfO sub(2)-based memory devices: impact of the atmosphere and the oxygen partial pressure
Bertaud, T, Sowinska, M, Walczyk, D, Walczyk, Ch, Kubotsch, S, Wenger, Ch, Schroeder, T
Published in IOP conference series. Materials Science and Engineering (01.01.2012)
Published in IOP conference series. Materials Science and Engineering (01.01.2012)
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Journal Article
Resistive switching of Ti/HfO2-based memory devices: impact of the atmosphere and the oxygen partial pressure
Bertaud, T, Sowinska, M, Walczyk, D, Walczyk, Ch, Kubotsch, S, Wenger, Ch, Schroeder, T
Published in IOP conference series. Materials Science and Engineering (01.01.2012)
Published in IOP conference series. Materials Science and Engineering (01.01.2012)
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Journal Article
Functionalized Back-End Devices for (Bi)CMOS Circuits
Wenger, Christian, Walczyk, Christian, Walczyk, Damian, Lukosius, Mindaugas, Fraschke, Mirko, Wolansky, Dirk, Santos, Paulo V.
Published in ECS transactions (01.01.2010)
Published in ECS transactions (01.01.2010)
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Journal Article
Injection and trapping of electrons in Y 2 O 3 layers on Si
Wang, W C, Badylevich, M, Afanas'ev, V V, Stesmans, A, Adelmann, C, Elshocht, S Van, Kittl, J A, Lukosius, M, Walczyk, Ch, Wenger, Ch
Published in IOP conference series. Materials Science and Engineering (01.02.2010)
Published in IOP conference series. Materials Science and Engineering (01.02.2010)
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Journal Article
Injection and trapping of electrons in Y2O3 layers on Si
Wang, W C, Badylevich, M, Afanas'ev, V V, Stesmans, A, Adelmann, C, Elshocht, S Van, Kittl, J A, Lukosius, M, Walczyk, Ch, Wenger, Ch
Published in IOP conference series. Materials Science and Engineering (01.01.2010)
Published in IOP conference series. Materials Science and Engineering (01.01.2010)
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Journal Article
Resistive switching behavior in TiN/HfO2/Ti/TiN devices
Walczyk, D., Bertaud, T., Sowinska, M., Lukosius, M., Schubert, M. A., Fox, A., Wolansky, D., Scheit, A., Fraschke, M., Schoof, G., Wolf, C., Kraemer, R., Tillack, B., Korolevych, R., Stikanov, V., Wenger, C., Schroeder, T., Walczyk, C.
Published in 2012 International Semiconductor Conference Dresden-Grenoble (ISCDG) (01.09.2012)
Published in 2012 International Semiconductor Conference Dresden-Grenoble (ISCDG) (01.09.2012)
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Conference Proceeding