Automotive 130 nm smart-power-technology including embedded flash functionality
Rudolf, R., Wagner, C., O'Riain, L., Gebhardt, K., Kuhn-Heinrich, B., von Ehrenwall, B., von Ehrenwall, A., Strasser, M., Stecher, M., Glaser, U., Aresu, S., Kuepper, P., Mayerhofer, A.
Published in 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs (01.05.2011)
Published in 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs (01.05.2011)
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Conference Proceeding
Reliability degradation of MOS transistors originated from plasma process-induced charging of circuit blocks and detected with fWLR methods
Martin, A., Wagner, C., Koten, A., Schwerd, M.
Published in 2011 IEEE International Integrated Reliability Workshop Final Report (01.10.2011)
Published in 2011 IEEE International Integrated Reliability Workshop Final Report (01.10.2011)
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Conference Proceeding
Visualizing the doping profile of a silicon germanium HBT with polysilicon emitter using electron holography
Tilke, A.T., Lenk, A., Muhle, U., Wagner, C., Dahl, C., Lichte, H.
Published in IEEE transactions on electron devices (01.06.2005)
Published in IEEE transactions on electron devices (01.06.2005)
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Journal Article
A low-cost fully self-aligned SiGe BiCMOS technology using selective epitaxy and a lateral quasi-single-poly integration concept
Tilke, A.T., Rochel, M., Berkner, J., Rothenhausser, S., Stahrenberg, K., Wiedemann, J., Wagner, C., Dahl, C.
Published in IEEE transactions on electron devices (01.07.2004)
Published in IEEE transactions on electron devices (01.07.2004)
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Journal Article
Quarter micron BiCMOS technology platform with implanted-base- or SiGe-bipolar transistor for wireless communication ICs
Tilke, Armin T., Rothenhäußer, Steffen, Rochel, Markus, Stahrenberg, Knut, Goller, Klaus, Junge, Axel, Pribil, Andreas, Föste, Bernd, Wiedemann, Jörg, Tegeler, Martin, Berkner, Jörg, Wagner, Cajetan, Dahl, Claus
Published in Solid-state electronics (01.12.2004)
Published in Solid-state electronics (01.12.2004)
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Journal Article