Tetragonal ZrO2/Al2O3 Stack as High-κ Gate Dielectric for Si-Based MOS Devices
WU, Yung-Hsien, CHEN, Lun-Lun, LYU, Rong-Jhe, LI, Ming-Yen, WU, Hsiao-Che
Published in IEEE electron device letters (01.09.2010)
Published in IEEE electron device letters (01.09.2010)
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Journal Article
Structure and property changes of ZrO2/Al2O3/ZrO2 laminate induced by low-temperature NH3 annealing applicable to metal-insulator-metal capacitor
LI, Ming-Yen, TSAI, Bin-Siang, JIANG, Pei-Chuen, WU, Hsiao-Che, WU, Yung-Hsien, LIN, Yu-Jen
Published in Thin solid films (01.07.2010)
Published in Thin solid films (01.07.2010)
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Tetragonal \hbox/\hbox\hbox Stack as High- \kappa Gate Dielectric for Si-Based MOS Devices
Wu, Yung-Hsien, Chen, Lun-Lun, Lyu, Rong-Jhe, Li, Ming-Yen, Wu, Hsiao-Che
Published in IEEE electron device letters (01.09.2010)
Published in IEEE electron device letters (01.09.2010)
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Journal Article
Effect of plasma operation pressure on burn-in efficiency of an SIP–PVD chamber
Lin, Yi-Chi, Li, Ming-Yen, Wu, Hsiao-Che, Chuang, Poyo, Huang, Cheng-Sung
Published in Microelectronic engineering (2008)
Published in Microelectronic engineering (2008)
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Morphology evolution in TiN/Al–0.5Cu/Ti interconnection during chamber long stay and post-deposition annealing correlated to defect formation in metallization processing
Li, Ming-Yen, Su, Mei-Yun, Chang, Te-Fu, Tsai, Bin-Siang, Tsai, Wen-Li, Wu, Hsiao-Che, Chuang, Poyo, Yang, Tsung-Hsun, Yen, Haw
Published in Microelectronic engineering (01.07.2008)
Published in Microelectronic engineering (01.07.2008)
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Journal Article
Tetragonal [Formula Omitted] Stack as High-[Formula Omitted] Gate Dielectric for Si-Based MOS Devices
Wu, Yung-Hsien, Chen, Lun-Lun, Lyu, Rong-Jhe, Li, Ming-Yen, Wu, Hsiao-Che
Published in IEEE electron device letters (01.09.2010)
Published in IEEE electron device letters (01.09.2010)
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Journal Article
Nitrided Tetragonalhbox{ZrO}_{2} as the Charge-Trapping Layer for Nonvolatile Memory Application
Wu, Yung-Hsien, Chen, Lun-Lun, Lin, Yuan-Sheng, Li, Ming-Yen, Wu, Hsiao-Che
Published in IEEE electron device letters (01.12.2009)
Published in IEEE electron device letters (01.12.2009)
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Journal Article
Nitrided Tetragonal \hbox as the Charge-Trapping Layer for Nonvolatile Memory Application
Yung-Hsien Wu, Lun-Lun Chen, Yuan-Sheng Lin, Ming-Yen Li, Hsiao-Che Wu
Published in IEEE electron device letters (01.12.2009)
Published in IEEE electron device letters (01.12.2009)
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Journal Article
Structure and property changes of ZrO 2/Al 2O 3/ZrO 2 laminate induced by low-temperature NH 3 annealing applicable to metal–insulator–metal capacitor
Li, Ming-Yen, Tsai, Bin-Siang, Jiang, Pei-Chuen, Wu, Hsiao-Che, Wu, Yung-Hsien, Lin, Yu-Jen
Published in Thin solid films (2010)
Published in Thin solid films (2010)
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Journal Article
Nitrided Tetragonal hbox ZrO 2 as the Charge-Trapping Layer for Nonvolatile Memory Application
Wu, Yung-Hsien, Chen, Lun-Lun, Lin, Yuan-Sheng, Li, Ming-Yen, Wu, Hsiao-Che
Published in IEEE electron device letters (01.01.2009)
Published in IEEE electron device letters (01.01.2009)
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Journal Article
Effect of Process Pressure on Atomic Layer Deposition of Al2O3
Li, Ming-Yen, Chang, Yung-Yuan, Wu, Hsiao-Che, Huang, Cheng-Sung, Chen, Jen-Chung, Lue, Jen-Lang, Chang, Shieh-Ming
Published in ECS transactions (18.07.2007)
Published in ECS transactions (18.07.2007)
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