Materials for spin-transfer-torque magnetoresistive random-access memory
Yuasa, Shinji, Hono, Kazuhiro, Hu, Guohan, Worledge, Daniel C.
Published in MRS bulletin (01.05.2018)
Published in MRS bulletin (01.05.2018)
Get full text
Journal Article
Write-error-rate of Spin-Transfer-Torque MRAM (Invited)
Worledge, Daniel C.
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
Get full text
Conference Proceeding
Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications
Safranski, Christopher, Hu, Guohan, Sun, Jonathan Z., Hashemi, Pouya, Brown, Stephen L., Buzi, Luxherta, D'Emic, Christopher P., Edwards, Eric R. J., Galligan, Eileen, Gottwald, Matthias G., Gunawan, Oki, Karimeddiny, Saba, Jung, Hyunsung, Kim, Juhyun, Latzko, Ken, Trouilloud, Philip L., Worledge, Daniel C.
Published in IEEE transactions on electron devices (01.12.2022)
Published in IEEE transactions on electron devices (01.12.2022)
Get full text
Journal Article
Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory
Nowak, Janusz J., Robertazzi, Ray P., Sun, Jonathan Z., Hu, Guohan, Park, Jeong-Heon, Lee, JungHyuk, Annunziata, Anthony J., Lauer, Gen P., Kothandaraman, Raman, O'Sullivan, Eugene J., Trouilloud, Philip L., Kim, Younghyun, Worledge, Daniel C.
Published in IEEE magnetics letters (2016)
Published in IEEE magnetics letters (2016)
Get full text
Journal Article
Reliable Five-Nanosecond Writing of Spin-Transfer Torque Magnetic Random-Access Memory
Hu, Guohan, Nowak, Janusz J., Gottwald, Matthias G., Sun, Jonathan Z., Houssameddine, Dimitri, Bak, Junghoon, Brown, Stephen L., Hashemi, Pouya, He, Qing, Kim, Juhyun, Kothandaraman, Chandrasekharan, Lauer, Gen, Lee, Hyun Koo, Suwannasiri, Thitima, Trouilloud, Philip L., Worledge, Daniel C.
Published in IEEE magnetics letters (2019)
Published in IEEE magnetics letters (2019)
Get full text
Journal Article