High temperature CVD systems to grow GaN or SiC based structures
Beccard, R, Schmitz, D, Woelk, E.G, Strauch, G, Makarov, Y, Heuken, M, Deschler, M, Juergensen, H
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
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Conference Proceeding
Investigation and optimization of InGaAs/InP heterointerfaces grown by chemical beam epitaxy using spectroscopic ellipsometry and photoluminescence
SHERWIN, M. E, TERRY, F. L, MUNNS, G. O, HERMAN, J. S, WOELK, E. G, HADDAD, G. I
Published in Journal of electronic materials (01.03.1992)
Published in Journal of electronic materials (01.03.1992)
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Measurement of low resistive ohmic contacts on semiconductors
Woelk, E.G., Krautle, H., Beneking, H.
Published in IEEE transactions on electron devices (01.01.1986)
Published in IEEE transactions on electron devices (01.01.1986)
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The optimization of InxGa1-xAs and InP growth conditions by CBE
SHERWIN, M. E, MUNNS, G. O, ELTA, M. E, WOELK, E. G, CRARY, S. B, TERRY, F. L, HADDAD, G. I
Published in Journal of crystal growth (01.05.1991)
Published in Journal of crystal growth (01.05.1991)
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The design of an ECR plasma system and its application to InP grown by CBE
Sherwin, M.E., Munns, G.O., Woelk, E.G., Drummond, T.J., Elta, M.E., Terry, F.L., Haddad, G.I.
Published in Journal of crystal growth (01.05.1991)
Published in Journal of crystal growth (01.05.1991)
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Conference Proceeding
SiC and group III nitride growth in MOVPE production reactors
Beccard, R., Schmitz, D., Woelk, E.G., Strauch, G., Jürgensen, H.
Published in Diamond and related materials (01.08.1997)
Published in Diamond and related materials (01.08.1997)
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High temperature growth of SiC and group III nitride structures in production reactors
Schmitz, D., Beccard, R., Woelk, E.G., Strauch, G., Juergensen, H.
Published in 1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) (1998)
Published in 1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132) (1998)
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